Multi-logic-state storage unit of multi-vortex ferroelectric domain and power regulation and control method

Abstract

The invention discloses a multi-logic-state storage unit of a multi-vortex ferroelectric domain and a power regulation and control method. The storage unit comprises a substrate, a transition layer, a lower electrode, a ferroelectric layer, a dielectric and ferroelectric periodic multilayer composite film layer and an upper electrode which are sequentially arranged from bottom to top. And the state of the multi-logic-state storage unit of the multi-vortex ferroelectric domain is determined according to the remaining polarization directions in the ferroelectric layer, the dielectric and ferroelectric periodic multilayer composite film layer and the magnitude of the applied force perpendicular to the substrate. According to the power regulation and control method, the logic state in the storage unit is determined by utilizing the conductivity of the multi-logic-state storage unit of the multi-vortex ferroelectric domain after the electric power is applied, the storage density of the ferroelectric memory is effectively improved, the stored logic state can be identified based on the magnitude of the read current, the process of reading the logic state does not affect the stored data, non-destructive reading is realized, and the nanoscale size of the ferroelectric vortex domain is beneficial to the miniaturization of the ferroelectric memory.

Description

technical field [0001] The invention relates to the field of information storage, in particular to a multi-logic state storage unit with multi-vortex ferroelectric domains and a power regulation method. Background technique [0002] Capacitor-based ferroelectric memory uses the spontaneous polarization of ferroelectric materials for data storage, which has the advantages of radiation resistance, fatigue resistance, and good retention. It has important applications in spacecraft, aircraft black boxes, and high-speed rail. However, the ferroelectric memory based on the capacitor structure often involves the phenomenon of polarization reversal in some storage cells during the data reading process, which will destroy the data written in the storage cells. In order to ensure the re-readability of the data, A rewrite operation is also required. This mode greatly increases the volume of the device unit and the complexity of the circuit, which is not conducive to the miniaturizatio...

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Problems solved by technology

Although the researchers found that applying force perpendicular to the axis of the ferroelectric vortex domains can temporarily erase the ferroelectric vortex domains, this state cannot be preserved after the force is removed, and the ferroelectric vortex domains will return to their original shape.

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