Junction field effect transistor based on tungsten disulfide/gallium antimonide and preparation method thereof

Abstract

The invention discloses a junction field effect transistor based on WS2 / GaSb and a preparation method thereof. The junction field effect transistor comprises a substrate, an N-type WS2 thin film, a P-type GaSb nanowire, a source electrode, a drain electrode and a gate electrode, wherein the P-type GaSb nanowire is arranged on the surface of the substrate, the source electrode and the drain electrode are arranged at the two ends of the surface of the P-type GaSb nanowire, and the N-type WS2 thin film is arranged on the surface of the P-type GaSb nanowire and located between the source electrode and the drain electrode; and the gate electrode is arranged on the surface of the N-type WS2 thin film and located between the source electrode and the drain electrode. According to the junction field effect transistor, GaSb and WS2 two-dimensional semiconductors are applied to the JFET, generation of interface defects is restrained, the influence of an interface state on carrier transport is reduced, and by means of the advantage that the JFET does not have complex dielectric engineering, the sub-threshold swing of the device is reduced, and the switch ratio and the current density are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a tungsten disulfide (WS) based 2 ) / gallium antimonide (GaSb) junction field effect transistor and a preparation method thereof. Background technique [0002] III-V semiconductor nanowires have attracted extensive attention in next-generation electronics and optoelectronics due to their excellent properties such as large Bohr excitonic radii, narrow bandgap, and high carrier mobility. In particular, as an important P-type semiconductor, GaSb nanowires exhibit a band gap of about 0.726 eV and a theoretical hole mobility as high as 1000 cm 2 V -1 the s -1 , as well as strong spin-orbit interactions, have been used as surrogate candidates for channels in electronic and optoelectronic devices ([1] Borg, M.; Schmid, H.; Gooth, J.; et al. High-Mobility GaSb Nanostructures Cointegrated with InAs on Si.ACSNano.2017,11,2554-2560.). For example, a GaSb-based photodetector exhibits...

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Problems solved by technology

However, for MOSFETs based on GaSb nanowires, there are still unresolved issues such as large hysteresis (>5V), poor subthreshold swing (nearly 1000mV dec -1 ), higher drain voltage (7V) ([4] Yang, Z.X.; Liu, L.; Yip, S.; et al. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility,-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical VaporDeposition.ACS Nano.2017,11,4237-4246.)

This drawback severely limits their application in short-channel devices with oxide dielectric layers, since the deposition process of the dielectric layer can introduce interfacial defect states in the channel semiconductor

Furthermore, a high-quality gate dielectric layer with low defect state density and high dielectric constant remains a challenge for short-channel MOSFETs

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