Photoelectric chip integrated fiber manufacturing method and fiber product thereof

Abstract

The invention discloses a photoelectric chip integrated fiber manufacturing method, and fiber, yarn and fabric thereof. The manufacturing method comprises the following steps: a preform is manufactured from a fiber substrate material; a photoelectric chip and a lead are arranged in the preform, the preform is subjected to thermal stretching, so that the lead is in electric contact with the photoelectric chip in the thermal stretching process, a photoelectric chip integrated fiber is obtained, and the lead and the photoelectric chip keep fixed in form and performance in the thermal stretching process; or the lead is electrically connected with the photoelectric chip before thermal stretching, and further packaging is carried out through thermal stretching to form the photoelectric chip integrated fiber. The manufacturing method of the photoelectric chip integrated fiber, the fiber, the yarn and the fabric provided by the invention can be applied to the fields of omnibearing light emitting, gesture recognition, visual feedback, physiological monitoring and the like.

Description

technical field [0001] The invention relates to a method for making a fiber, in particular to a method for making a photoelectric chip integrated fiber and corresponding fiber products. Background technique [0002] With the development of composite materials and people's demand for intelligent life, as well as the vigorous development of the field of functional fibers in recent years, various functional fibers have been manufactured, such as conductive fibers, thermal fibers, magnetic control fibers, etc. In addition, scientists have combined it with textiles and applied it to the field of smart wearables to realize various functions such as communication, physiological monitoring, temperature regulation, and flexible lighting. [0003] Traditional wearable devices are produced on hard substrates. Functional devices are attached to the surface of the fabric, which will affect the comfort of the user. However, building fiber-based devices and combining them with textiles not...

AI Technical Summary

Problems solved by technology

Because this method can deposit different materials in sequence, it can realize a variety of in-fiber devices, such as PN junctions, Schottky junctions, PIN junctions, ohmic contacts, etc. in fibers, but this process has certain limitations. The fiber length is limited, only centimeter to millimeter-scale fibers can be realized, and it is only suitable for materials that can be synthesized in the gas phase within the fiber, which has great restrictions on the materials used

[0006] The integration of functional fiber devices by doping materials with different electrical and optical properties in fibers is complex and limited, because a variety of materials are required to realize complex functions in fibers, including crystalline semiconductor materials, high-melting point alloys, Films, thermosetting polymers, etc., and these materials are often unable to achieve co-drawing with fiber materials. Due to the limitations of these materials and the requirements of micro-scale size control for micro-electronic devices, this method is used to fully integrate micro-electronic devices into fiber is not feasible

[0007] Chinese invention patent CN208385024U discloses a fibrous electrode and a fibrous energy harvesting device, wherein the fibrous electrode uses polydimethylsiloxane as the inner core, and its surface is coated with single-walled carbon nanotubes as the inner conductive nanolayer , and lead out the copper wire from one end, then add the piezoelectric nanomaterial layer and the outer conductive nanomaterial layer and lead out the copper wire, while the fiber-shaped energy harvesting device is coated with a polydimethylsiloxane layer on the surface of the fiber-shaped electrode , the preparation of this process is cumbersome and difficult to realize, and the prepared fiber has low sensitivity

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