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Production process of ultrathin aluminum nitride ceramic substrate

A technology of aluminum nitride ceramics and production process, applied in the field of aluminum nitride ceramics, can solve the problems of affecting product quality, easy deformation and cracking, low density of blanks, etc. Excellent performance

Active Publication Date: 2021-06-01
FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the tape casting process requires good fluidity of the ceramic slurry, the content of organic matter in the ceramic slurry is high, the density of the green sheet is low, and the shrinkage of the green sheet is serious during the process of debinding and sintering, and the thinner the green sheet, the easier it is to deform and crack. , affecting the quality of the product

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A production process of an ultra-thin aluminum nitride ceramic substrate, comprising the following steps:

[0034]S1, preparation of ceramic slurry:

[0035] (1) Weigh the following raw materials in parts by weight: 80 parts of aluminum nitride powder, 1.6 parts of composite sintering aid, 2.5 parts of epoxy acrylate, 4.5 parts of polyurethane acrylate, 5 parts of hydroxyethyl acrylate, tricyclodecane 3.75 parts of alkanedimethanol diacrylate, 1.25 parts of pentaerythritol triacrylate, 0.1 part of 2-hydroxy-2-methyl-1-[4-(2-hydroxyethoxy)phenyl]-1-propanone, BYK190 dispersion 2 parts of agent, 0.8 parts of silane coupling agent KH-5500,

[0036] Among them, the purity of aluminum nitride powder is 99.9%. It is composed of micron-sized aluminum nitride and nano-sized aluminum nitride at a mass ratio of 95:5. The average particle size of micron-sized aluminum nitride is 1 μm, and that of nano-sized aluminum nitride. The average particle size is 40nm; the composite sinte...

Embodiment 2

[0048] A production process of an ultra-thin aluminum nitride ceramic substrate, comprising the following steps:

[0049] S1, preparation of ceramic slurry:

[0050] (1) Weigh the following raw materials in parts by weight: 85 parts of aluminum nitride powder, 2.8 parts of composite sintering aid, 5 parts of epoxy acrylate, 5 parts of polyurethane acrylate, 6 parts of hydroxyethyl acrylate, tricyclodecane 4 parts of dimethanol diacrylate, 2 parts of pentaerythritol triacrylate, 0.2 parts of ethyl 2,4,6-trimethylbenzoylphenyl phosphonate, 4 parts of EFKA-4560 dispersant, silane coupling agent A1711 .2 copies,

[0051] Among them, the purity of aluminum nitride powder is 99.9%, which is composed of micron-sized aluminum nitride and nano-sized aluminum nitride in a mass ratio of 97:3. The average particle size of micron-sized aluminum nitride is 2 μm, and that of nano-sized aluminum nitride The average particle size is 100nm; the composite sintering aid is CaCO 3 -YF 3 -La 2...

Embodiment 3

[0063] A production process of an ultra-thin aluminum nitride ceramic substrate, comprising the following steps:

[0064] S1, preparation of ceramic slurry:

[0065] (1) Weigh the following raw materials in parts by weight: 90 parts of aluminum nitride powder, 4 parts of composite sintering aid, 8 parts of epoxy acrylate, 4 parts of polyurethane acrylate, 7.4 parts of hydroxyethyl acrylate, tricyclodecane 5.7 parts of alkane dimethanol diacrylate, 2.9 parts of pentaerythritol triacrylate, 0.3 parts of 1-hydroxycyclohexyl phenyl ketone, 5 parts of sodium polycarboxylate dispersant, 1.5 parts of silane coupling agent KH570,

[0066] Among them, the purity of the aluminum nitride powder is 99.9%. It is composed of micron-sized aluminum nitride and nano-sized aluminum nitride at a mass ratio of 99:1. The average particle size of the micron-sized aluminum nitride is 3 μm, and that of the nano-sized aluminum nitride The average particle size is 150nm; the composite sintering aid is...

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Abstract

The invention relates to the technical field of aluminum nitride ceramics, and provides a production process of an ultrathin aluminum nitride ceramic substrate. The process comprises the following steps: (1) uniformly mixing aluminum nitride powder, a composite sintering aid, a UV monomer, a reactive diluent, a photoinitiator, a dispersant and a silane coupling agent to obtain ceramic slurry; (2) subjecting the ceramic slurry to tape casting on a tape casting machine, initiating a polymerization reaction through ultraviolet radiation, subjecting the slurry to in-situ curing molding to obtain a ceramic green body, and then cutting the ceramic green body into required shapes and sizes through a mold to obtain ceramic green sheets; (3) laminating the ceramic green sheets, and putting the laminated ceramic green sheets into a glue discharging furnace for glue discharging; and (4) carrying out hot pressed sintering on the ceramic blank sheet after glue discharging under the protection of nitrogen atmosphere, cooling to room temperature after the sintering, and then carrying out powder removal and polishing processes to obtain the ultrathin aluminum nitride ceramic substrate. The prepared aluminum nitride ceramic substrate is ultrathin, good in thermal conductivity and high in bending strength.

Description

technical field [0001] The invention relates to the technical field of aluminum nitride ceramics, in particular to a production process of an ultra-thin aluminum nitride ceramic substrate. Background technique [0002] Aluminum nitride is an emerging ceramic material with excellent comprehensive properties such as excellent thermal conductivity, low dielectric constant and dielectric loss, high volume resistivity, non-toxicity, and a thermal expansion coefficient similar to silicon. The theoretical thermal conductivity of aluminum nitride ceramics is as high as 320W / (m K), which is 5-10 times that of aluminum oxide for traditional electronic packaging substrates, and it is resistant to high temperature and corrosion. Its comprehensive performance is better than that of alumina and beryllium oxide ceramics. It is the first choice for the new generation of semiconductor substrates and packaging materials for electronic components, and has broad application prospects in the fie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/622C04B35/638C04B35/645
CPCC04B35/581C04B35/622C04B35/638C04B35/645C04B2235/6025C04B2235/6562C04B2235/6567C04B2235/96C04B2235/9607
Inventor 杨大胜施纯锡冯家伟
Owner FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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