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Preparation method and application of hot-pressed photonic polycrystalline semiconductor

A technology of polycrystalline semiconductors and photons, applied in phototherapy, crystal growth, polycrystalline material growth, etc., can solve the problem of inability to emit sustainable far-infrared rays, poor far-infrared emissivity and mechanical strength, and low yield of infrared optical materials To achieve the effect of promoting normal quantum vibration, improving immunity, and activating cell activity

Active Publication Date: 2021-05-28
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the far-infrared materials in the prior art are applied to equipment, the mobility of the material is large, the loss is large during use, and stable and sustainable far-infrared rays cannot be emitted; secondly, the preparation method in the prior art produces The yield of infrared optical materials is relatively low, and the far-infrared emissivity and mechanical strength are relatively poor. Therefore, providing a method for preparing hot-pressed photonic polycrystalline semiconductors has become an urgent problem in this field.

Method used

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preparation example Construction

[0024] In order to solve the above technical problems, the first aspect of the present invention provides a method for preparing a hot-pressed photonic polycrystalline semiconductor, at least including the following steps:

[0025] (1) Mix the solid inorganic matter and the rare earth salt compound, and perform firing to obtain a fired mixture A, transfer the fired mixture A to a reaction kettle to react for a period of time, cool it, and then grind it to obtain a powder material B;

[0026] (2) Heating the carrier, adding the surface treatment agent and powder material B, and stirring, then feeding into an extruder for extrusion and granulation, and drying to obtain a hot-pressed photonic polycrystalline semiconductor.

[0027] In a preferred embodiment, the firing temperature in the step (1) is 1500-1700°C.

[0028] In a preferred embodiment, the temperature of the firing mixture A in the step (1) is 900-1000° C. during the reaction in the reactor.

[0029] In a preferred e...

Embodiment 1

[0049] A method for preparing a hot-pressed photonic polycrystalline semiconductor, the preparation method comprising the following steps:

[0050] (1) Mix 5 parts of zirconia, 5 parts of tin oxide, 4 parts of neodymium chloride, 6 parts of cerium acetate, 4 parts of scandium chloride, 3 parts of kaolinite, 1 part of black tourmaline and 1.2 parts of hydrotalcite, at 1500 ℃ in a high-temperature furnace to obtain a firing mixture A; transfer the firing mixture A to a reactor at a temperature of 950°C and a pressure of 15 MPa, and react in a high-temperature and high-pressure reactor for 35 hours. After cooling, grind to obtain a powder material B ;

[0051] (2) Heat 45 parts of linear low density polyethylene to 120°C, add 0.3 parts of γ-methacryloxypropyl trimethoxysilane and powder material B, mix and stir for 18 hours, and send them into the extruder for extrusion After granulation and drying, a hot-pressed photonic polycrystalline semiconductor can be obtained.

[0052] ...

Embodiment 2

[0054] A method for preparing a hot-pressed photonic polycrystalline semiconductor, the preparation method comprising the following steps:

[0055] (1) Mix 5 parts of zirconia, 5 parts of tin oxide, 4 parts of neodymium chloride, 6 parts of cerium acetate, 4 parts of scandium chloride, 3 parts of kaolinite, 1 part of black tourmaline and 1.2 parts of hydrotalcite, at 1600 ℃ in a high-temperature furnace to obtain a firing mixture A; transfer the firing mixture A to a reactor at a temperature of 950°C and a pressure of 15 MPa, and react in a high-temperature and high-pressure reactor for 35 hours. After cooling, grind to obtain a powder material B ;

[0056] (2) Heat 45 parts of linear low density polyethylene to 120°C, add 0.3 parts of γ-methacryloxypropyl trimethoxysilane and powder material B, mix and stir for 18 hours, and send them into the extruder for extrusion After granulation and drying, a hot-pressed photonic polycrystalline semiconductor can be obtained.

[0057] ...

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Abstract

The invention relates to the technical field of new materials, relates to the technical field of polycrystalline semiconductor materials and intelligent wearing, and particularly relates to a preparation method and application of a hot-pressed photonic polycrystalline semiconductor. The preparation method of the hot-pressed photonic polycrystalline semiconductor at least comprises the following steps: (1) mixing a solid inorganic substance and a rare earth salt compound, firing to obtain a fired mixture A, transferring the fired mixture A into a reaction kettle, reacting for a period of time, cooling, and grinding to obtain a powder material B; and (2) heating a carrier, adding a surface treating agent and the powder material B, stirring, feeding into an extruder, and carrying out extrusion granulation and drying to obtain the hot-pressed photonic polycrystalline semiconductor. By reasonably setting the firing temperature, the reaction temperature and the reaction pressure, the hot-pressed photonic polycrystalline semiconductor material prepared by the method in the technical scheme is high in yield and relatively good in mechanical strength, and can be applied to intelligent wearing articles.

Description

technical field [0001] The invention relates to the technical field of new materials, to the technical fields of polycrystalline semiconductor materials and smart wearables, and in particular to a preparation method and application of hot-pressed photonic polycrystalline semiconductors. Background technique [0002] Hot pressing technology is a new technology for the preparation of infrared optical materials developed in the past 20 years. The infrared optical materials prepared by this technology have multiple functions, which can increase the vitality of cells, strengthen metabolism, and enable The substance exchange in the skin is in a stable state, and it has the functions of anti-inflammatory and detumescence. In addition, far infrared enhances tissue nutrition, activates tissue metabolism, increases cell oxygen supply, strengthens cell regeneration, improves blood oxygen supply in wards, controls the development of inflammation and localizes it, and accelerates lesion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A61N5/06C30B28/02C30B29/00
CPCA61N5/0613C30B28/02C30B29/00A61N2005/066
Inventor 张得龙冼光
Owner SOUTH CHINA NORMAL UNIVERSITY
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