Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mini LED chip structure and manufacturing method thereof

A chip structure and chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as metal layer migration, and achieve the effects of excellent high temperature resistance, stable process window, and good resistance to electromigration.

Inactive Publication Date: 2020-11-20
FUJIAN PRIMA OPTOELECTRONICS CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, platinum is usually used as the anti-migration layer in the Mini LED chip. In the face of ultra-small size, high current density and long-term current impact, the metal layer migration problem still occurs, including the lower layer covered by platinum. Metal Migration Issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mini LED chip structure and manufacturing method thereof
  • Mini LED chip structure and manufacturing method thereof
  • Mini LED chip structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Please refer to Figure 1 to Figure 3 , Embodiment 1 of the present invention is:

[0052] A Mini LED chip structure, please refer to figure 1 , including:

[0053] Substrate layer 3, N-type gallium nitride layer 4, multi-layer quantum well layer 5, P-type gallium nitride layer 6, current spreading layer 7, first current stabilizing layer 8, P-type current spreading injection metal layer 9, P-type Welding interface metal layer 10, second current stabilization layer 16, N-type current expansion injection metal layer 15, N-type welding interface metal layer 14, buffer insulating layer 11, stress release layer 12 and insulating full-spectrum reflective layer 13;

[0054] The N-type gallium nitride layer 4 is located in the middle area on one side of the substrate layer 3, and the side of the Mini LED chip close to the other side of the substrate layer 3 is the bottom of the Mini LED chip; The first stacked area on one side of one side is sequentially stacked with a mult...

Embodiment 2

[0060] Please refer to Figure 4 , the second embodiment of the present invention is:

[0061] A method for manufacturing a Mini LED chip, specifically comprising:

[0062] S1. Transfer the prepared GaN epitaxial material according to the first preset pattern through photolithography facilities, and then use ICP equipment to etch the GaN epitaxial wafer to form an N-type GaN layer on the substrate;

[0063] S2. First, make a current spreading layer template through an evaporation machine or a sputtering machine. The material of the current spreading layer template can be indium tin oxide, indium tungsten oxide, nickel-gold alloy, etc., and then use photolithography facilities to make the current spreading layer template Perform pattern transfer according to the second preset pattern, and finally corrode the current spreading layer template by chemical reagents to form a current spreading layer;

[0064] Chemical reagents can be hydrochloric acid, oxalic acid, ferric chloride...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a Mini LED chip structure and a manufacturing method thereof. The Mini LED chip structure comprises a P-type current expansion injection metal layer and an N-type current expansion injection metal layer. The P-type current expansion injection metal layer and the N-type current expansion injection metal layer comprise anti-migration metal ruthenium. According to the Mini LEDchip structure and the manufacturing method thereof, the metal ruthenium is used as the anti-migration layer in the N / P type current expansion injection metal layer to replace traditional metal platinum, a higher anti-electromigration effect can be achieved, the process window of the metal ruthenium is stable, the price of the metal ruthenium is equivalent to that of platinum, and therefore cost cannot be increased, and it is guaranteed that the cost is proper.

Description

technical field [0001] The invention relates to the field of chip manufacturing, in particular to a Mini LED chip structure and a manufacturing method thereof. Background technique [0002] Mini LED chips generally refer to LED chips with a side length between 100 and 200um. Because of their miniaturization, their application fields and manufacturing technology are quite different from traditional LEDs; Mini LEDs are generally used for ultra-high resolution Direct-lit backlights for large outdoor screens, movie screens, and high-end LCD displays. The above three application scenarios cannot be realized by traditional LEDs. [0003] The manufacturing difficulties of Mini LED are: 1. Small size; 2. Complex structure; 3. High reliability requirements for welding, temperature resistance, current resistance, etc.; and Mini LEDs are used in backlight, display and other fields. Mini LEDs are arranged in high density. Even if a single chip fails, the maintenance cost is very high. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/40H01L33/38
CPCH01L33/40H01L33/387H01L2933/0016
Inventor 张帆黄章挺
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com