Optical auxiliary induction heating self-crucible single crystal growth device and application thereof

An induction heating and growth device technology, which is applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of high crystal defect density, large investment in crystal growth, high cost, etc., and achieve the regulation and reduction of physical properties. Crystal growth cost, effect of low-cost growth

Inactive Publication Date: 2020-11-20
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the deficiencies of existing technologies, especially the traditional β-Ga 2 o 3 、Lu 2 o 3 The dependence of crystal growth methods and devices such as high melting point, high volatility, and high corrosion on precious metal crucibles, large loss of precious metal crucibles lead to large investment in crystal growth, high cost, and high defect density in crystals. The present invention provides an optical Auxiliary induction heating self-crucible single crystal growth device and method

Method used

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  • Optical auxiliary induction heating self-crucible single crystal growth device and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] In Example 1, crystals were obtained by adopting spontaneous nucleation without adopting processes such as pulling and seeding. The device used in Examples 2-3 is an upper weighing automatic diameter control (ADC) system device, and a rear heater temperature zone is set on the crucible. The upper weighing automatic equal diameter control (ADC) system device is conventional equipment in this field, and the commonly used device models are TDL2J50A or TDL2J60.

Embodiment 4

[0041] In Example 4, a noble metal iridium or platinum-rhodium alloy is added to make a mold, and crystals grow controllably on the upper surface of the mold.

[0042] Example 1:

[0043] Gallium oxide spontaneous nucleation crystal growth, the steps are as follows:

[0044] (1) Selection and processing of raw materials

[0045] Gallium oxide powder with a purity of 99.99% is used and put into a crucible with a diameter of 200 mm surrounded by copper tubes, and the gap between the copper tubes is 0.5 mm. Circulating water is passed through the copper pipe, and the water temperature is <80°C;

[0046] (2) Melt melting and crystal growth

[0047] The crystal growth atmosphere is air, start the LD heat source to irradiate the center of the crucible, adjust the heating power to form a liquid pool, start induction heating, adjust the heating power until the area of ​​the liquid pool gradually increases, turn off the LD heat source, and continue to increase the heating power of t...

Embodiment 2

[0049] Directional seed crystal growth of gallium oxide crystals, the steps are as follows:

[0050] (1) Selection and processing of raw materials

[0051] Gallium oxide powder with a purity of 99.99% was used and put into a crucible with a diameter of 200 mm surrounded by copper tubes, and the gap between the copper tubes was 0.5 mm. Circulating water is passed through the copper pipe, and the water temperature is <80°C;

[0052] (2) Selection of seed crystal

[0053] Choose β-Ga in direction 2 o 3 seed crystal

[0054] (3) Melt melting and crystal growth

[0055] The crystal growth atmosphere is air, start the LD heat source to irradiate the center of the crucible, adjust the heating power to form a liquid pool, start the induction heating power supply, adjust the heating power until the area of ​​the liquid pool gradually increases, turn off the LD heat source, put in the gallium oxide seed crystal and collect it. Neck, when the seed crystal is as thin as 1mm, it ent...

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Abstract

The invention relates to an optical auxiliary induction heating self-crucible single crystal growth device and an application thereof. A self-crucible is formed by combining discrete copper pipes filled with circulating water, a high-power optical heat source is used for heating to form a liquid pool, and controllable and clean melting starting of a melt is realized. Resistance heating or opticalheat source heating is selected to form a rear hot temperature zone to achieve crystal growth temperature gradient control, and traditional crystal growth technologies such as a pulling method and anedge-defined film-fed growth method are used for controllable and efficient growth of single crystals. According to the invention, a precious metal crucible is prevented from being used as a crystal growth container, precious metal loss is effectively overcome, and crystal growth cost is reduced. Crystal growth can be carried out in various atmospheres, and improvement of crystal quality and regulation and control of physical properties are facilitated. The problems that a solid-liquid interface needs to be maintained by surface tension and large-size crystals are difficult to grow in a pure optical floating zone method are solved. Optical heating is adopted, melting starting of raw materials is achieved, and the defects of impurity pollution, inclusion and the like caused by melting starting of graphite rods, metal rods and the like are avoided.

Description

technical field [0001] The invention relates to a large-size, high-melting-point, high-volatility single crystal growth device and method that do not require precious metal crucibles and metal igniters in an optical-assisted induction heating method, and belong to the technical field of crystal growth equipment. Background technique [0002] β-Ga 2 o 3 The forbidden band width is E g =4.8eV, as an ultra-wide bandgap semiconductor material, it has received widespread attention at home and abroad. Compared with third-generation semiconductor materials such as SiC and GaN, β-Ga 2 o 3 The bandgap width is larger, the breakdown field strength is higher, and more importantly, the material can be grown by the melt method, which has obvious advantages in the enlargement of single crystal size and the reduction of crystal cost. [0003] However, currently β-Ga 2 o 3 Single crystal growth methods mostly use precious metals such as iridium and platinum-rhodium alloys as crucible...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10C30B15/36
CPCC30B15/10C30B15/36
Inventor 贾志泰穆文祥陶绪堂
Owner SHANDONG UNIV
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