Composition for forming photocurable silicon-containing coating film

A photocurable and coating technology, which is applied in optics, photomechanical equipment, photosensitive material processing, etc., can solve the problem of focal depth reduction and achieve the effect of suppressing diffuse reflection and suppressing height difference

Active Publication Date: 2020-10-02
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, since the depth of focus decreases as the exposure wavelength becomes...

Method used

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  • Composition for forming photocurable silicon-containing coating film
  • Composition for forming photocurable silicon-containing coating film
  • Composition for forming photocurable silicon-containing coating film

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0222] Tetraethoxysilane 25.1g (containing 70 mol% in all silanes), phenyltrimethoxysilane 1.71g (containing 5 mol% in all silanes), 4.60g methyltriethoxysilane (containing 5 mol% in all silanes) Contain 15 mol% in silane), acryloyloxypropyltrimethoxysilane 4.03g (contain 10 mol% in all silanes), acetone 53.1g join in the flask of 300ml, utilize magnetic stirrer to carry out while mixing solution While stirring, 11.5 g of 0.01M aqueous hydrochloric acid solution was added dropwise. After the addition, the flask was transferred to an oil bath adjusted to 85°C and refluxed for 240 minutes. Then, 70 g of propylene glycol monomethyl ether acetate was added, and acetone, methanol, ethanol, hydrochloric acid, and water were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) solution. Furthermore, propylene glycol monomethyl ether acetate was added, and the solvent ratio was adjusted so that 100% of propylene glycol monomethy...

Synthetic example 2

[0224] 22.0 g of tetraethoxysilane (65 mol% in all silanes), 1.61 g of phenyltrimethoxysilane (5 mol % in all silanes), 12.09 g of acryloxypropyltrimethoxysilane (Containing 30 mol% in all silanes), 53.5 g of acetone were put into a 300 ml flask, and 10.8 g of 0.01M hydrochloric acid aqueous solution was added dropwise while stirring the mixed solution with a magnetic stirrer. After the addition, the flask was transferred to an oil bath adjusted to 85°C and refluxed for 240 minutes. Then, 70 g of propylene glycol monomethyl ether acetate was added, and acetone, methanol, ethanol, hydrochloric acid, and water were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) solution. Furthermore, propylene glycol monomethyl ether acetate was added, and the solvent ratio was adjusted so that 100% of propylene glycol monomethyl ether acetate might become 20 mass % in conversion of the solid residue in 140 degreeC. The obtained poly...

Synthetic example 3

[0226] 8.24g of tetraethoxysilane (25 mol% in all silanes), 1.57g of phenyltrimethoxysilane (5 mol% in all silanes), 25.7g of acryloxypropyltrimethoxysilane (Containing 70 mol% in all silanes), 53.7 g of acetone were put into a 300 ml flask, and 10.6 g of 0.01 M hydrochloric acid aqueous solution was added dropwise, stirring the mixed solution with a magnetic stirrer. After the addition, the flask was transferred to an oil bath adjusted to 85°C and refluxed for 240 minutes. Then, 70 g of propylene glycol monomethyl ether acetate was added, and acetone, methanol, ethanol, hydrochloric acid, and water were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) solution. Furthermore, propylene glycol monomethyl ether acetate was added, and the solvent ratio was adjusted so that 100% of propylene glycol monomethyl ether acetate might become 20 mass % in conversion of the solid residue in 140 degreeC. The obtained polymer corre...

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Abstract

The issue of the invention is to provide a composition for forming a photocurable silicon-containing coating film, which can be photocured on an uneven substrate without needing to cure and fire the silicon-containing coating film at a high temperature, the flattening of an organic underlayer film, which lies below the silicon-containing coating film and is also photocured, may not be deteriorated. Therefore, the problem of the present invention is to provide a composition for forming a photocurable silicon-containing coating film whereby, when a highly flattened silicon-containing coating film is formed on a highly flattened organic underlayer film and a resist is then coated on the silicon-containing coating film, diffuse reflection at the interfaces between these layers can be preventedeffectively and the formation of unevenness after etching can also be prevented effectively. As a solution, the composition for forming a photocurable silicon-containing coating film contains a hydrolysable silane or a hydrolysate or hydrolysis condensation product thereof, wherein the hydrolysable silane comprises a hydrolysable silane represented by formula (1) (wherein R1 represents a functional group involved in photocrosslinking). The composition for forming a photocurable silicon-containing coating film can be used for forming a silicon-containing coating film that can be cured by irradiating an intermediate layer located between an organic underlayer film and a resist film both formed on a substrate with ultraviolet ray in a lithography process in the production of a semiconductor.

Description

technical field [0001] It relates to a step substrate coating composition for forming a planarization film by photocrosslinking a substrate having a step difference, and a method for producing a planarized laminated substrate using the step substrate coating composition. Background technique [0002] In recent years, semiconductor integrated circuit devices are processed with minute design rules. In order to form a finer resist pattern by photolithography, it is necessary to shorten the exposure wavelength. [0003] However, since the depth of focus decreases as the exposure wavelength becomes shorter, it is necessary to improve the planarization properties of the film formed on the substrate. In order to manufacture a semiconductor device having fine design rules, planarization technology on a substrate becomes important. [0004] A method of forming a planarization film such as a resist underlayer film formed under a resist by photocuring is disclosed. [0005] Disclose...

Claims

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Application Information

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IPC IPC(8): C09D183/04C08G77/04C08G59/68C09D183/08G03F7/11G03F7/20G03F7/26G03F7/40
CPCC08G59/68C09D183/08G03F7/0757G03F7/094G03F7/0755C08G77/06C08G77/16C08G77/18C08G77/20C08G77/70C08G77/80C09D183/06C08G77/26C09D183/04C08G77/04G03F7/11G03F7/20G03F7/26G03F7/40G03F7/168C08G77/14C08G77/28
Inventor 柴山亘德永光石桥谦桥本圭祐中岛诚
Owner NISSAN CHEM IND LTD
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