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Method for manufacturing indium ball array of small-center-distance focal plane detector

A technology of focal plane detector and center distance, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of small size, uneven indium column, etc., and achieve improved connectivity and high equipment compatibility , Improve the effect of tolerance ability

Pending Publication Date: 2020-10-02
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for manufacturing an indium ball array of a focal plane detector with a small center distance, which solves the problem of inhomogeneity in the process of reflowing an indium column into a ball, and realizes the manufacture of a small-sized, high-uniformity indium ball array under a small center distance

Method used

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  • Method for manufacturing indium ball array of small-center-distance focal plane detector
  • Method for manufacturing indium ball array of small-center-distance focal plane detector
  • Method for manufacturing indium ball array of small-center-distance focal plane detector

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Embodiment 1

[0029]The purpose of this embodiment is to use the manufacturing method of the high-uniformity indium ball array disclosed in the present invention to produce a satisfying and readout circuit for an InAs / GaSb type II superlattice mid-wave infrared focal plane photosensitive chip with a center distance of 15 microns. The high-uniformity indium ball array required by flip-bonding verifies the feasibility of the present invention.

[0030] Based on the InAs / GaSb type II superlattice focal plane photosensitive chip after the p-contact electrode is prepared, the following steps are carried out:

[0031] (1) Using AZ4330 positive photoresist, through ultraviolet exposure and development, a square contact electrode hole pattern is produced in the center of the pixel. The sides of the holes are 7 microns long.

[0032] (2) Ion beam sputtering coating equipment is used to vapor-deposit three metal layers of chromium, nickel, and gold in sequence, with thicknesses of 100, 600, and 100 ...

Embodiment 2

[0043] The purpose of this embodiment is to produce an InGaAs / InAsP / InP short-wave infrared focal plane photosensitive chip with a center distance of 12.5 microns, using the manufacturing method of the high-uniformity indium ball array disclosed in the present invention, to produce a chip that meets the requirements of flip-bonding with the readout circuit. The high-uniformity indium ball array verifies the feasibility of the present invention.

[0044] Based on the nGaAs / InAsP / InP focal plane photosensitive chip after the p-contact electrode is prepared, the following steps are carried out:

[0045] (1) Using AZ4330 positive photoresist, through ultraviolet exposure and development, a square contact electrode hole pattern is produced in the center of the pixel. The sides of the holes are 6 microns long.

[0046] (2) Ion beam sputtering coating equipment is used to vapor-deposit three metal layers of chromium, nickel, and gold in sequence, with thicknesses of 50, 400, and 70 ...

Embodiment 3

[0057] The purpose of this embodiment is to use the manufacturing method of the high-uniformity indium ball array disclosed in the present invention for an InGaAs / InP short-wave infrared focal plane photosensitive chip with a center distance of 10 microns to produce a high-uniformity indium ball array that meets the requirements of flip-soldering with the readout circuit. permanent indium ball array to verify the feasibility of the present invention.

[0058] Based on the InGaAs / InP focal plane photosensitive chip after the p-contact electrode is prepared, the following steps are carried out:

[0059] (1) Using AZ4330 positive photoresist, through ultraviolet exposure and development, a square contact electrode hole pattern is produced in the center of the pixel. The side length of the hole is 5.5 microns.

[0060] (2) Ion beam sputtering coating equipment is used to vapor-deposit three metal layers of chromium, nickel, and gold in sequence, with thicknesses of 20, 200, and 5...

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Abstract

The invention discloses a method for manufacturing an indium ball array of a small-center-distance focal plane detector, which comprises the following steps of 1) coating photoresist on a chip, and generating an electrode hole pattern on the photoresist, 2) sequentially evaporating chromium, nickel and gold layers, 3) removing the photoresist to generate a metal electrode, 4) depositing a dielectric film layer, 5) coating a photoresist, and generating a contact hole pattern on the photoresist, 6) etching to remove the dielectric film in the hole, and removing the photoresist, 7) coating a photoresist, and generating an indium hole pattern on the photoresist, 8) evaporating indium metal, 9) removing the photoresist to generate an indium column array, and 10) conducting heat reflux treatmentto generate an indium ball array. The method has the advantages that the problem that indium columns manufactured through a traditional gold priming coat process are poor in morphology consistency after balling is solved, the high-uniformity and high-fullness indium ball array with the larger duty ratio can be manufactured, and the communication rate of a focal plane and reading circuit flip-chipbonding interconnection is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetection chip manufacturing, and in particular relates to a method for manufacturing an indium ball array of a focal plane detector with a small center distance. Background technique [0002] Semiconductor focal plane detectors are mainly used in detection applications such as imaging and spectroscopy. According to the detection wavelength range, it can be divided into ultraviolet, visible, short-wave infrared, medium-wave infrared, long-wave infrared and very long-wave infrared devices. The mainstream focal plane devices in different bands are GaN / AlGaN (ultraviolet), Si (visible), InGaAs (short-wave infrared), InAs / GaSb (medium-wave infrared), and HgCdTe (medium-wavelength and very long-wave infrared). Since the current CMOS integrated circuit technology is mainly based on the Si process, except for the visible light focal plane detector, the focal plane detectors in the rest of the...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/488H01L23/498H01L31/101
CPCH01L21/4814H01L21/4853H01L23/488H01L23/49811H01L31/101
Inventor 马英杰朱宪亮邵秀梅李雪
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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