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Method for preparing grating with submicron structure

A sub-micron and grating technology, which is applied in the field of preparation of sub-micron structured gratings, to achieve the effects of improving diffraction efficiency, good grating uniformity, and high pattern accuracy

Inactive Publication Date: 2020-06-19
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difficulty lies in the control of the imprinting parameters, and finally the dry etching of the substrate determines the quality of the grating

Method used

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  • Method for preparing grating with submicron structure
  • Method for preparing grating with submicron structure
  • Method for preparing grating with submicron structure

Examples

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preparation example Construction

[0037] The present invention provides a method for preparing a submicron structure grating, which includes the following steps:

[0038] (1) After spin-coating an electron beam resist on a silicon wafer, perform electron beam exposure to obtain an electron beam resist layer;

[0039] Among them, the beam current of electron beam exposure is 1nA~20nA; the dose of electron beam exposure is 100μC / cm 2 ~300μC / cm 2 ;

[0040] (2) Use the electron beam resist layer as a mask to perform dry etching to prepare a nanoimprint template;

[0041] Among them, the dry etching gas in step (2) includes SF 6 And C 4 F 8 ;SF 6 The air flow is 4sccm~20sccm; C 4 F 8 The gas flow rate is 4sccm~20sccm; the cavity pressure of dry etching is 4mTorr~25mTorr; the radio frequency power is: 10W-50W; the inductive coupling power is 100W~1500W;

[0042] (3) Transfer the sub-micron structure on the nanoimprint template to the thermally cured transparent soft film, and spin-coat the UV-curable imprint glue on the subs...

Embodiment

[0055] Such as figure 1 As shown, this embodiment provides a method for preparing a sub-micron structure grating, including the following steps:

[0056] Step 1: Take a 430 micron thick 2-inch p-type For silicon wafers with crystal orientation, after conventional wet cleaning, the electron beam resist ARP6200.09 is spin-coated on the silicon wafer, see Figure 2(a) to obtain the electron beam resist;

[0057] Step 2: Perform electron beam exposure on the electron beam resist, the exposure dose is 240μC / cm 2 , The current is 15nA; after the exposure is completed, develop with MIBK for 40s and fix with isopropanol for 70s. See Figure 2(b) to obtain the electron beam resist layer;

[0058] Step 3: Use the electron beam resist layer exposed by the electron beam as the mask of the silicon wafer, and use ICP etching to prepare the nanoimprint template, see Figure 2(c);

[0059] Among them, the etching parameters are: SF 6 The flow rate is 12sccm; C 4 F 8 The flow rate is 12sccm; the radio fr...

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Abstract

The invention discloses a method for preparing a grating with a submicron structure, which belongs to the technical field of microstructures in semiconductors, and particularly comprises the followingsteps of: spin-coating an electron beam resist on a silicon wafer, and performing electron beam exposure to obtain an electron beam resist layer; performing dry etching by taking the electron beam resist layer as a mask to prepare a nanoimprint template; transferring the submicron structure on the nanoimprint template to a thermocuring transparent soft film; spin-coating an ultraviolet curing imprinting adhesive on the substrate for preparing the grating; transferring the submicron structure on the thermocuring transparent soft film to an ultraviolet curing imprinting adhesive through a nanoimprinting method; and transferring the submicron pattern on the ultraviolet curing impressing adhesive to a substrate for preparing the grating by using a dry etching method. The nanoimprint templateprepared through electron beam exposure and dry etching is high in pattern precision and smooth in surface. The sub-micron structure grating prepared through soft film transfer printing, nanoimprint lithography and dry etching is good in uniformity, high in yield, accurate in size and low in cost.

Description

Technical field [0001] The invention belongs to the technical field of microstructures in semiconductor science, and more specifically relates to a method for preparing a submicron structure grating. Background technique [0002] With the development and progress of semiconductor technology, the scale of microstructures has reached nano-processing precision. Among them, laser direct writing, ultraviolet lithography, electron beam exposure and nanoimprinting can all make sub-micron gratings. However, large-area fabrication of submicron structures still has problems such as high cost and difficulty in fabrication. At present, high-precision sub-micron grating imprint templates are generally produced by a combination of electron beam exposure and dry etching. Among them, the difficulty of electron beam exposure lies in the control of exposure parameters and how to prevent overexposure or underexposure. The problem of defects in graphics; the dry etching parameters of the grating im...

Claims

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Application Information

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IPC IPC(8): G02B5/18G03F7/00
CPCG02B5/1857G03F7/0002
Inventor 李攀夏金松卢宏李宇航曾成徐巍桑池斌李志雯
Owner HUAZHONG UNIV OF SCI & TECH
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