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Room-temperature high-spin Hall angle platinum-rare earth thin film material and preparation method and application thereof

A thin-film material and high-spin technology, which is applied in Hall-effect devices, material selection, metal material coating technology, etc., can solve the problems of difficult mass production, expensive growth process of topological materials, inability to realize large-area preparation of magnetron sputtering and Application and other issues, to achieve the effect of increased production efficiency, reduced room temperature spin diffusion length, and reduced cost

Active Publication Date: 2020-06-05
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, none of the existing alloy materials can meet the urgent demand for materials with stronger spin Hall effect. People have studied topological insulators (Bi 2 Se 3 ) and topological semimetals (TaAs, W 3 (Ta et al.) have obtained spin Hall angles greater than 1, but the growth process of topological materials is very expensive and difficult to mass-produce, and usually requires ultra-high vacuum molecular beam epitaxy systems or high-temperature preparation of small-area single-crystal materials, and it is still impossible to achieve magnetic Large-area preparation and application of controlled sputtering

Method used

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  • Room-temperature high-spin Hall angle platinum-rare earth thin film material and preparation method and application thereof
  • Room-temperature high-spin Hall angle platinum-rare earth thin film material and preparation method and application thereof
  • Room-temperature high-spin Hall angle platinum-rare earth thin film material and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028] A method for preparing a platinum-rare earth film material with a high spin Hall angle at room temperature, comprising the steps of:

[0029] S1. A platinum target coated with rare earth gadolinium (Gd) is selected as a sputtering target, and the platinum target coated with rare earth gadolinium (Gd) is based on a high-purity (higher than 99.99wt%) platinum target as a parent material, A target made by attaching two square sheets of high-purity gadolinium (higher than 99.999wt%) to the sputtering track on the surface of a platinum target, the molar ratio of gadolinium in the target is 7mol%;

[0030] S2, installing the platinum target with the rare earth gadolinium (Gd) in the step S1 in the target position of the cavity of the magnetron sputtering equipment;

[0031] S3, using the Si substrate as the substrate, cleaning with acetone, alcohol and deionized water, and drying with nitrogen to ensure that the surface of the Si substrate is clean;

[0032] S4, put the substr...

Embodiment 2

[0039] Compared with Example 1, this embodiment differs in that in step S1, a platinum target coated with rare earth gadolinium (Gd) is selected as the sputtering target, and the platinum target coated with rare earth gadolinium (Gd) is based on A high-purity (higher than 99.99wt%) platinum target is used as a parent, and five high-purity gadolinium (higher than 99.999wt%) square sheets are attached to the sputtering track on the surface of the platinum target. The molar ratio of gadolinium element in the material is 18 mol%. All the other steps are the same as in Example 1.

[0040] Such as figure 1 As shown, it is a schematic diagram of the spin pumping effect of platinum-rare earth thin film materials with high spin Hall angle at room temperature; the spin current generated by the magnetic thin film is injected into the Gd 18 Pt 82 In the alloy thin film, the inverse spin Hall voltage is generated by the inverse spin Hall effect, and the Gd 18 Pt 82 The spin Hall angle...

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Abstract

The invention provides a room-temperature high-spin Hall angle platinum-rare earth thin film material, and belongs to the technical field of new spin electronic materials. The thin-film material is aplatinum-rare earth alloy thin film growing on the surface of a substrate, in the platinum-rare earth alloy thin film, the molar percentage of the rare earth element is 1-60 mol%, and the molar percentage of the platinum is 40-99 mol%. The room-temperature high-spin Hall angle platinum-rare earth thin film material and a preparation method thereof are simple and feasible, compared with a pure platinum thin film, the room-temperature spin Hall angle of the platinum-rare earth thin film is obviously increased, and the room-temperature spin diffusion length of the platinum-rare earth thin film isreduced. Compared with the spin Hall effect of the pure platinum, the spin current generation efficiency is improved, the cost is reduced, it can be achieved that the platinum-rare earth thin film can be uniformly prepared on a semiconductor wafer on a large area, and a new method is provided for large-area preparation and research of the great spin Hall material.

Description

technical field [0001] The invention belongs to the technical field of spin electronics new materials, and in particular relates to a platinum-rare earth thin film material with a very high room temperature spin Hall angle and a preparation method and application thereof. Background technique [0002] With the rapid development of information technology, the miniaturization and low power consumption of traditional electronic devices are facing severe bottlenecks due to the existence of current Joule heat. Electron spin is another property of electrons besides charge, which can be used to transmit and process information, that is, spintronics (Spintronics) was born. Spintronics transmits information with extremely low power consumption, and can even complete the processing and storage of quantum information. It is an ideal medium for building quantum information chips. Spin Hall Effect (Spin Hall Effect) is the effect of longitudinal spin current under the action of spin-orb...

Claims

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Application Information

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IPC IPC(8): C22C5/04C22C28/00C23C14/16C23C14/35H01L43/06H01L43/10H01L43/14
CPCC23C14/35C23C14/165C22C5/04C22C28/00H10N52/00H10N52/01H10N50/85
Inventor 金立川朱虹宇张怀武唐晓莉钟智勇向全军白飞明
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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