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Preparation method of nitrogen-doped graphene material based on 5, 5'-diamino-3, 3'-1, 2, 4-triazole

A nitrogen-doped graphene and diamino technology, which is applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of limited application and difficult compounding of graphene materials, so as to expand applications and improve free loading. The effect of carrier density, enhanced interaction

Inactive Publication Date: 2020-04-28
GUANGDONG UNIV OF PETROCHEMICAL TECH
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Problems solved by technology

[0005] The invention provides a preparation method of nitrogen-doped graphene material based on 5,5'-diamino-3,3'-1,2,4-triazole, aiming to solve the problem that graphene material is not easy to combine with other materials , resulting in a problem that limits the application

Method used

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  • Preparation method of nitrogen-doped graphene material based on 5, 5'-diamino-3, 3'-1, 2, 4-triazole
  • Preparation method of nitrogen-doped graphene material based on 5, 5'-diamino-3, 3'-1, 2, 4-triazole
  • Preparation method of nitrogen-doped graphene material based on 5, 5'-diamino-3, 3'-1, 2, 4-triazole

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Experimental program
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Effect test

Embodiment 1

[0019] Add 0.1 g of graphene with a sheet diameter of 0.2 μm into 25 ml of N,N'-dimethylformamide, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 60 minutes, A graphene solution of 4 mg / ml was obtained.

[0020] Dissolve 0.8 g of 5,5'-diamino-3,3'-1,2,4-triazole into 25ml of N,N'-dimethylformamide, add the above graphene solution, and heat at 100°C for 30min , cooled to 0°C, and dried for 48 hours to obtain graphene-coated 5,5'-diamino-3,3'-1,2,4-triazole eutectic.

[0021] Grind the 5,5'-diamino-3,3'-1,2,4-triazole eutectic into powder, place it in a tube furnace and heat it to 600 ℃ for 4 hours to obtain a nitrogen content of 18 . 3% nitrogen doped graphene material.

Embodiment 2

[0023] Add 0.1g of graphene with a sheet diameter of 100μm into 25ml of N,N'-dimethylformamide, stir magnetically at 600r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 30 minutes to obtain 4mg / ml of graphene solution.

[0024] Dissolve 0.2g of 5,5'-diamino-3,3'-1,2,4-triazole into 25ml of N,N'-dimethylformamide, add the above graphene solution, and heat at 70°C for 60min , cooled to 4°C, and dried for 48 hours to obtain graphene-coated 5,5'-diamino-3,3'-1,2,4-triazole eutectic.

[0025] The graphene-coated 5,5'-diamino-3,3'-1,2,4-triazole eutectic was ground into powder, placed in a tube furnace and heated to 600°C for 4 hours to obtain The amount of nitrogen is 15.4% nitrogen-doped graphene material.

Embodiment 3

[0027] Add 0.1g of graphene with a sheet diameter of 100μm into 25ml of N,N'-dimethylformamide, stir magnetically at 600r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 30 minutes to obtain 4mg / ml of graphene solution.

[0028] Dissolve 0.1g of 5,5'-diamino-3,3'-1,2,4-triazole into 25ml of N,N'-dimethylformamide, add the above graphene solution, and heat at 70°C for 60min , cooled to 4°C, and dried for 48 hours to obtain graphene-coated 5,5'-diamino-3,3'-1,2,4-triazole eutectic.

[0029] The graphene-coated 5,5'-diamino-3,3'-1,2,4-triazole eutectic was ground into powder, placed in a tube furnace and heated to 600°C for 4 hours to obtain The amount of nitrogen is 8.19% nitrogen-doped graphene material.

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Abstract

The invention discloses a preparation method of a nitrogen-doped graphene material based on 5, 5'-diamino-3, 3'-1, 2, 4-triazole. The method comprises the following steps: dispersing graphene into N,N '-dimethylformamide, adding an N, N'-dimethylformamide solution of 5, 5 '-diamino-3, 3'-1, 2, 4-triazole, heating at 50-100 DEG C for 30-60 minutes, cooling to 0-4 DEG C, and drying to obtain a graphene-coated 5, 5 '-diamino-3, 3'-1, 2, 4-triazole eutectic; grinding 5, 5 '-diamino-3, 3'-1, 2, 4-triazole eutectic into powder, and heating the powder at 500-800 DEG C for 3-5 hours to obtain a nitrogen-doped graphene material; according to the preparation method, the graphene is uniformly coated on the surface of the 5, 5 '-diamino-3, 3'-1, 2, 4-triazole crystal, and additives such as an adhesive are not needed, so that the surface performance of the 5, 5 '-diamino-3, 3'-1, 2, 4-triazole crystal is completely maintained.

Description

technical field [0001] The invention belongs to the technical field of material preparation, in particular to a method for preparing a nitrogen-doped graphene material based on 5,5'-diamino-3,3'-1,2,4-triazole. Background technique [0002] Graphene (G) is a two-dimensional honeycomb lattice material formed by the close bonding of planar single-layer carbon atoms, with a thickness of about 0.35nm, which is the thinnest two-dimensional material in the world. [0003] Graphene has no resistance for electrons to pass through, generates less heat, and has high electrical conductivity. It is the material with the best electrical conductivity known, and has unique properties. For example, the tensile strength can reach 130GPa; the carrier mobility can reach 15000-25000cm 2 / Vs (square centimeter per volt second), which can exceed 10 times that of silicon wafers; thermal conductivity can reach 5000W / mK (watt per millithermal conductivity), which is 3 times that of diamond; it also...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194
CPCC01B32/194C01B2204/04C01B2204/32
Inventor 朱佳平吴铛林若鹏杨晓琳方佳怡
Owner GUANGDONG UNIV OF PETROCHEMICAL TECH
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