Preparation method of indium phosphide seed crystal

A technology of indium phosphide and seed crystal, which is applied in the field of preparation of indium phosphide seed crystal, can solve the problem of the influence of indium phosphide single crystal growth, uncontrollable seed crystal orientation angle, dense dislocation of indium phosphide single crystal or electrical Performance exceeds the standard and other problems, to achieve the effect of improving the quality of crystal growth

Pending Publication Date: 2022-03-11
威科赛乐微电子股份有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Most of the indium phosphide seed crystals in the prior art are only inspected for defects in the indium phosphide single crystal ingot, and then directly cut to obtain a square seed crystal, and then polished to obtain the final seed crystal. The crystal orientation angle of the crystal is uncontrollable, and it is still easy to introduce defects into the seed crystal, which will affect the growth of the indium phosphide single crystal. The defects in the seed crystal will be introduced into the growing crystal, resulting in dense dislocations in the indium phosphide single crystal. Or the electrical performance exceeds the standard, unable to meet customer needs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of indium phosphide seed crystal
  • Preparation method of indium phosphide seed crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0024] S1: Adjust the angle of the indium phosphide single crystal head and take a test sample.

[0025] A1: Slice the indium phosphide single crystal head to obtain an indium phosphide wafer with a thickness of 0.8-1.2mm, and cut and break the indium phosphide wafer to obtain square pieces. That is to say, the circular indium phosphide wafer is uniformly cut into four small openings with a tool at the edge using the existing method, and then the edge of the indium phosphide wafer is partly split along the small openings to form four mutually perpendicular , the intersecting section, which is a cleavage surface, thus changing the indium phosphide wafer from a circle to a square, that is, a square piece. Since the circular indium phosphide wafer is inconvenient to locate during detection, the circle The shaped indium phosphide wafer is broken into square pieces, which is convenient for positioning operation.

[0026] A2: Use a square piece to measure the actual crystal orienta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of indium phosphide seed crystals, and relates to the technical field of semiconductor materials. According to the preparation method of the indium phosphide seed crystal, the angle of an indium phosphide single crystal is adjusted, and after a qualified area is obtained through testing, the indium phosphide seed crystal is obtained through drilling, grinding and polishing. The invention discloses a preparation method of an indium phosphide seed crystal, the indium phosphide seed crystal can be rapidly prepared, the operation process is simple and rapid and is not influenced by the crystal shape and the crystal orientation angle, the treated seed crystal is smooth and flat in surface and stable in property, and the crystal growth quality of an indium phosphide single crystal is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing an indium phosphide seed crystal. Background technique [0002] Indium phosphide (InP) is one of the important III-V compound semiconductor materials, and it is a new generation of electronic functional materials after Si and GaAs. Indium phosphide has the advantages of direct transition energy band structure, high electro-optic conversion efficiency and electron mobility, easy to make semi-insulating sheet material, suitable for making high-frequency microwave devices and circuits, high operating temperature, and strong radiation resistance. As a solar cell material, the conversion efficiency is high. These characteristics determine its wide application in civil and military fields such as solid-state luminescence, microwave communication, optical fiber communication, guidance / navigation, and satellite. [0003] With the wide application ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00B24B1/00C30B29/40C30B33/00C30B11/14
CPCB28D5/00B24B1/00C30B29/40C30B33/00C30B11/14
Inventor 傅伟力李勇
Owner 威科赛乐微电子股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap