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Wet-process groove type black silicon texturing method

A grooved, black silicon technology that can be used in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., to solve problems such as uneven texture of crystalline silicon wafers

Inactive Publication Date: 2019-11-05
阜宁苏民绿色能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for wet trough black silicon texturing to solve the problem in the prior art that the textured surface of a crystal silicon wafer is uneven after texturing

Method used

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Embodiment Construction

[0020] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0021] The additive BT20-A, additive BT20-B and additive BT20-C involved in the present invention are polycrystalline black silicon texturing auxiliary products, which are directly purchased from Shichuang Company, and the specific models are BT20-A, BT20-B and BT20-C.

[0022] A method for making wet-process trough-type black silicon texture, comprising the steps of:

[0023] Step 1. Treat the surface of the crystalline silicon wafer to remove the line marks on the surface of the crystalline silicon wafer, specifically: put the crystalline silicon wafer into the first-level treatment tank, remove the line marks on the surface of the silicon wafer, and obtain the first-level crystalline silicon with a smooth surface Tablets; wherein, the circulat...

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PUM

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Abstract

The invention discloses a wet-process groove type black silicon texturing method. The method comprises the following steps: carrying out surface treatment on a silicon wafer, and putting the silicon wafer into a primary treatment groove to remove line marks on the surface of the silicon wafer so as to obtain a primary silicon wafer with the smooth surface; performing hole digging and texturing onthe silicon wafer subjected to surface treatment, and putting the obtained primary silicon wafer into a secondary treatment groove for reaction for 180-220s to obtain a secondary silicon wafer with nanoscale small holes in the surface, wherein before the primary silicon wafer is put into the secondary treatment groove, a mixed solution in the secondary treatment groove stops flowing circularly 10-20s in advance until the hole digging is completed; carrying out hole expanding on the silicon wafer subjected to the hole digging and texturing, and putting the secondary silicon wafer subjected to the hole digging into a tertiary treatment groove for treatment for 85-95s to obtain a tertiary silicon wafer; and putting the obtained tertiary silicon wafer into a cleaning groove to obtain a siliconwafer with no metal ions on the surface, and drying the cleaned silicon wafer to obtain a finished silicon wafer. The obtained textured silicon wafer is same in hole size and good in uniformity.

Description

technical field [0001] The invention relates to the technical field of silicon chip production, in particular to a method for making texturing of black silicon in a wet method tank. Background technique [0002] With the confirmation of the timetable for the use of traditional energy, new energy, as a way for human beings to deal with the depletion of traditional energy, has received strong support from governments of various countries, and solar energy, as a member of new energy, has gained more and more attention. Compared with traditional energy sources, the cost of solar energy is still high. Therefore, improving the conversion efficiency of solar cells and reducing production costs is an urgent need for the entire solar industry. On the silicon wafer side, diamond wire cut polysilicon wafers has taken the leading position in silicon wafer cutting due to its huge cost reduction space. Due to the huge difference between the diamond wire cut damage layer and the mortar cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/67H01L31/0236B82Y40/00
CPCB82Y40/00H01L21/67086H01L21/67253H01L31/02363H01L31/1804Y02P70/50
Inventor 樊选胜宛正缪云展曹磊
Owner 阜宁苏民绿色能源科技有限公司
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