Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for measuring weak magnetic la 1-x sr x mno 3 Method for Epitaxial Thin Film Layered Magnetic Structures

A technology of epitaxial thin film and magnetic structure, which is applied in the parts of electromagnetic equipment, the manufacture/processing of electromagnetic devices, and the selection of materials, etc., can solve the problems of time-consuming and laborious, weak sample magnetism, and difficult to guarantee test accuracy, and achieve high efficiency. , the method is simple and easy to implement

Active Publication Date: 2020-09-08
PEKING UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Loren magneto-electron microscopy and electron holography technology require special processing such as cutting and thinning of the sample. Since the magnetic properties of the sample itself are very weak, and the magnetic changes of different layers of the sample are also very weak, after special processing, the magnetic properties of the sample will be even weaker. Not easy to observe
At the same time, the magnetic distribution in the sample cannot fully reflect the real situation in the film.
In addition, in order to study the variation law of the magnetic properties of thin films with temperature and magnetic field, the test equipment is required to add accessories related to temperature and magnetic field control. There are very few test equipments such as neutron reflection and low temperature devices and magnetic field devices in the world, and the test accuracy is difficult to guarantee. Therefore, it is not only time-consuming and labor-intensive to observe the magnetic structure of thin films by using the above methods, but also the test and analysis process is also difficult. very difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for measuring weak magnetic la <sub>1-x</sub> sr <sub>x</sub> mno <sub>3</sub> Method for Epitaxial Thin Film Layered Magnetic Structures
  • A method for measuring weak magnetic la <sub>1-x</sub> sr <sub>x</sub> mno <sub>3</sub> Method for Epitaxial Thin Film Layered Magnetic Structures
  • A method for measuring weak magnetic la <sub>1-x</sub> sr <sub>x</sub> mno <sub>3</sub> Method for Epitaxial Thin Film Layered Magnetic Structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) In order to prepare La with low Sr doping ratio, weak magnetic properties and thickness below 100 nm 1-x Sr x MnO 3 Epitaxial thin film (0≤x≤0.2), first prepared by sintering method L a0.825 Sr 0.175 MnO 3 target material; and then use PLD technology to deposit a thickness of 60 nm La 0.825 Sr 0.175 MnO 3 For the epitaxial thin film, the deposition rate is 2nm / min; after the deposition is completed, the cooling rate of the thin film is 10K / min, down to room temperature.

[0025] (2) Take the above film sample out of the PLD under the protection of inert gas, and then place it in the liquid helium chamber of PPMS. At this time, a magnetic field of 1000Oe is applied to the film sample for magnetization, and under the action of the magnetic field, a 10K / min The cooling rate is to cool the sample down to 10K, at which point the applied magnetic field is reduced to zero.

[0026] (3) Apply a reverse magnetic field of 10Oe to the above-mentioned thin film sample i...

Embodiment 2

[0029] (1) In order to prepare La with low Sr doping ratio, weak magnetic properties and thickness below 100 nm 1-x Sr x MnO 3 Epitaxial thin films (0≤x≤0.2), first prepared by sintering La 0.825 Sr 0.175 MnO 3 The target material; then using PLD technology, under the conditions of laser energy of 118mJ, frequency of 2Hz, oxygen pressure of 10Pa and substrate temperature of 570°C, the thicknesses of 10, 30 and 60 nanometers were respectively deposited on the STO (001) substrate. La 0.825 Sr 0.175 MnO 3 For the epitaxial thin film, the deposition rate is 2nm / min; after the deposition is completed, the cooling rate of the thin film is 10K / min, down to room temperature.

[0030] (2) The above thin film sample is taken out from the PLD under the protection of inert gas, and then placed in the liquid helium chamber of PPMS. At 300K, a magnetic field of 1000Oe is applied to the thin film sample for magnetization, and under the action of the magnetic field, a 10K / min The cool...

Embodiment 3

[0034] (1) In order to prepare La with low Sr doping ratio, weak magnetic properties and thickness below 100 nm 1-x Sr x MnO 3 Epitaxial thin films (0≤x≤0.2), first prepared by sintering La 0.825 Sr 0.175 MnO 3 target material; and then use PLD technology to deposit a thickness of 60 nm La 0.825 Sr 0.175 MnO 3 For the epitaxial thin film, the deposition rate is 2nm / min; after the deposition is completed, the cooling rate of the thin film is 10K / min, down to room temperature.

[0035] (2) The above-mentioned thin film sample is taken out from the PLD under the protection of an inert gas, and then placed in the liquid helium chamber of PPMS. At this time, a magnetic field of 1000Oe is applied to the thin film sample for magnetization, and under the action of the magnetic field, a 5K / min The cooling rate is to cool the sample down to 10K, at which point the applied magnetic field is reduced to zero.

[0036] (3) Apply reverse magnetic fields of 10, 30, 50 and 100 Oe to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for measuring weak magnetic La 1‑x Sr x MnO 3 In the method of layered magnetic structure of epitaxial thin film, a large magnetic field is first applied to cool down and magnetize the film, and then a weak reverse magnetic field disturbance is applied, and the La 1‑x Sr x MnO 3 The layered magnetic structure characteristics of epitaxial films, and the strength of magnetic moment exchange coupling between different layers. The method is simple and efficient, and the obtained test results can be used to analyze the distribution direction of the layered structure of the film, the magnetic inhomogeneity caused by the strain inside the film and the non-uniform rotation of the magnetic moment. Methods such as electron holography, magnetic circular dichroism and polarized neutron reflectance have obvious test advantages.

Description

technical field [0001] The invention relates to a testing method for a perovskite thin film layered magnetic structure, in particular to a method for measuring weak magnetic La 1-x Sr x MnO 3 Method for Epitaxial Thin Film Layered Magnetic Structures. Background technique [0002] Strongly correlated oxide epitaxial films with a perovskite structure have abundant magnetic and electronic states due to the mutual coupling between spin-charge-orbit, which has aroused extensive research interest of researchers. [0003] At present, many studies focus on controlling the physical properties of the film by using the stress of the adjacent layer at the interface between the film and the substrate, such as adjusting the rotation of the oxygen octahedron at the film interface and the degree of Ginger-Taylor distortion to achieve orbital reconstruction at the interface, two Electron gas and phase separation phenomena. Among such materials, lanthanum strontium manganese oxide (La 1...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/02H01L43/10H01L43/12G11C11/16H10N50/80H10N50/01
CPCG11C11/161H10N50/80H10N50/85H10N50/01
Inventor 韩景智李鑫张雄祚杨金波刘顺荃
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com