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A UV detector with a double-doped Al composition graded separation layer

An ultraviolet detector and a technology of composition gradient, applied in the field of ultraviolet detectors, can solve the problems of reducing the ionization energy of electron holes, enhancing the piezoelectric polarization effect, affecting the crystal quality of the device, etc., so as to enhance the polarization electric field, reduce the Lattice mismatch, the effect of increasing the avalanche multiplication factor

Active Publication Date: 2021-05-11
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, increasing the Al composition also increases the lattice mismatch of the material
In addition, for UV detectors with p-i-n structure with absorption layer, separation layer and multiplication layer, due to the large difference in Al composition between layers, it will lead to large lattice mismatch, which is easy to cause high position The wrong density seriously affects the crystal quality of the device, resulting in a large dark current
In addition, the large difference in Al composition will also enhance the piezoelectric polarization effect and reduce the electron-hole ionization energy, which in turn affects the detection of weak signals, resulting in a decrease in responsivity.

Method used

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  • A UV detector with a double-doped Al composition graded separation layer
  • A UV detector with a double-doped Al composition graded separation layer
  • A UV detector with a double-doped Al composition graded separation layer

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Embodiment 1

[0022] An ultraviolet detector with a double-doped Al composition graded separation layer, including a substrate 101, an AlN intermediate layer 102, a non-doped i-Al x1 Ga 1-x1 N buffer layer 103, n-type n-Al x2 Ga 1-x2 N layer 104, non-doped i-Al x3 Ga 1-x3 N absorption layer 105, double-doped Al composition graded p-Al x4 Ga 1-x4 N / i-Al x5 Ga 1-x5 N / n-Al x6 Ga 1-x6 N separation layer 106, non-doped i-Al x7 Ga 1-x7 N multiplication layer 107, p-type p-Al x8 Ga 1-x8 N layer 108 and p-type GaN layer 109; in n-type n-Al x1 Ga 1-x1 An n-type ohmic electrode 110 is drawn out on the N layer 104, and a p-type ohmic electrode 111 is drawn out on the p-type GaN layer 109, wherein x1, x2, x3, x4, x5, x6, x7, x8 satisfy x1>x2=x3=x4> x5>x6=x7>x8.

[0023] Such as figure 1 Shown is the ultraviolet detector provided by the present invention with double-doped Al composition gradient separation layer, c-plane sapphire substrate 101, AlN intermediate layer 102, non-doped i-Al...

Embodiment 2

[0032] An ultraviolet detector with a double-doped Al composition graded separation layer, including a substrate 101, an AlN intermediate layer 102, a non-doped i-Al x1 Ga 1-x1 N buffer layer 103, n-type n-Al x2 Ga 1-x2 N layer 104, non-doped i-Al x3 Ga 1-x3 N absorption layer 105, double-doped Al composition graded p-Al x4 Ga 1-x4 N / i-Al x5 Ga 1-x5 N / n-Al x6 Ga 1-x6 N separation layer 106, non-doped i-Al x7 Ga 1-x7 N multiplication layer 107, p-type p-Al x8 Ga 1-x8 N layer 108 and p-type GaN layer 109; in n-type n-Al x1 Ga 1-x1 An n-type ohmic electrode 110 is drawn out on the N layer 104, and a p-type ohmic electrode 111 is drawn out on the p-type GaN layer 109, wherein x1, x2, x3, x4, x5, x6, x7, x8 satisfy x1>x2=x3=x4> x5>x6=x7>x8.

[0033] Such as figure 1 Shown is the ultraviolet detector provided by the present invention with double-doped Al composition gradient separation layer, c-plane sapphire substrate 101, AlN intermediate layer 102, non-doped i-Al...

Embodiment 3

[0042] An ultraviolet detector with a double-doped Al composition graded separation layer, including a substrate 101, an AlN intermediate layer 102, a non-doped i-Al x1 Ga 1-x1 N buffer layer 103, n-type n-Al x2 Ga 1-x2 N layer 104, non-doped i-Al x3 Ga 1-x3 N absorption layer 105, double-doped Al composition graded p-Al x4 Ga 1-x4 N / i-Al x5 Ga 1-x5 N / n-Al x6 Ga 1-x6 N separation layer 106, non-doped i-Al x7 Ga 1-x7 N multiplication layer 107, p-type p-Al x8 Ga 1-x8 N layer 108 and p-type GaN layer 109; in n-type n-Al x1 Ga 1-x1 An n-type ohmic electrode 110 is drawn out on the N layer 104, and a p-type ohmic electrode 111 is drawn out on the p-type GaN layer 109, wherein x1, x2, x3, x4, x5, x6, x7, x8 satisfy x1>x2=x3=x4> x5>x6=x7>x8.

[0043] Such as figure 1 Shown is the ultraviolet detector provided by the present invention with double-doped Al composition gradient separation layer, c-plane sapphire substrate 101, AlN intermediate layer 102, non-doped i-Al...

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Abstract

The invention relates to an ultraviolet detector with a double-doped Al composition graded separation layer, comprising a substrate, an AlN intermediate layer, and a non-doped i-Al layer arranged in sequence from bottom to top. x1 Ga 1‑x1 N-buffer layer, n-type n-Al x2 Ga 1‑x2 N-layer, undoped i-Al x3 Ga 1‑x3 N absorption layer, double-doped Al composition graded p-Al x4 Ga 1‑x4 N / i‑Al x5 Ga 1‑x5 N / n‑Al x6 Ga 1‑x6 N separation layer, non-doped i-Al x7 Ga 1‑x7 N multiplication layer, p-type p-Al x8 Ga 1‑x8 N layer and p-type GaN layer; in n-type n‑Al x1 Ga 1‑x1 The n-type ohmic electrode is drawn out on the N layer, and the p-type ohmic electrode is drawn out on the p-type GaN layer, where x1>x2=x3=x4>x5>x6=x7>x8. The p-type doping and n-type doping can use the polarization induction effect accompanied by the composition gradient to increase the carrier concentration and further enhance the polarization electric field.

Description

technical field [0001] The invention relates to an ultraviolet detector with a double-doped Al component graded separation layer, which belongs to the field of semiconductor optoelectronic devices. Background technique [0002] Al as a direct bandgap semiconductor material x Ga 1-x N, the forbidden band width is continuously adjustable from 3.42 eV to 6.8 eV with different Al components, and its emission spectrum ranges from 200-365 nm, which just covers the solar spectrum blind zone (240-280 nm) caused by the ozone layer absorbing ultraviolet light. ), and the AlGaN material is small in size, light in weight, long in life, and good in shock resistance; high temperature resistance, corrosion resistance, and radiation resistance, suitable for harsh environments; low working voltage, no high-voltage power supply, etc. One of the ideal materials for appliances. [0003] The detection of weak light signals is an important application in the field of ultraviolet detection, esp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/105H01L31/0304H01L31/18
CPCH01L31/03048H01L31/105H01L31/1075H01L31/1848H01L31/1852Y02P70/50
Inventor 张雄陆亮崔一平
Owner SOUTHEAST UNIV
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