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A near-infrared luminescent bismuth-doped strontium chloropentaborate crystal and its preparation method

A near-infrared and pentaboric acid technology, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of bismuth laser output that have not yet been realized, and achieve the effects of convenient large-scale production, long fluorescence lifetime and stable structure

Inactive Publication Date: 2020-11-24
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Due to the limitations of the luminescent principle, there is currently no material based on rare earth ion doping that can produce ultra-broadband fluorescence covering the spectral region of 1-1.5 microns at the same time. Luminescence, wide absorption and emission cross-section, long fluorescence lifetime, etc., are expected to become the laser source of a new generation of ultra-broadband fiber amplifiers and lasers
However, at present, bismuth-doped near-infrared luminescent materials are mainly concentrated in glass materials, and there are few reports on bismuth-doped near-infrared luminescent crystal materials, and the crystal laser output of bismuth has not yet been realized.

Method used

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  • A near-infrared luminescent bismuth-doped strontium chloropentaborate crystal and its preparation method
  • A near-infrared luminescent bismuth-doped strontium chloropentaborate crystal and its preparation method
  • A near-infrared luminescent bismuth-doped strontium chloropentaborate crystal and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Select strontium carbonate, boric acid, strontium chloride hexahydrate, and bismuth trioxide as the starting compound raw materials, and weigh the compound raw materials respectively according to the stoichiometric ratio of each element, a total of 5 groups, and the proportion is as follows:

[0032] (1) Sr:B:O:Cl:Bi=1.998:5:9:1:0.002, corresponding to x=0.1%;

[0033] (2) Sr:B:O:Cl:Bi=1.99:5:9:1:0.01, corresponding to x=0.5%;

[0034] (3) Sr:B:O:Cl:Bi=1.98:5:9:1:0.02, corresponding to x=1.0%;

[0035] (4) Sr:B:O:Cl:Bi=1.96:5:9:1:0.04, corresponding to x=2.0%;

[0036] (5) Sr:B:O:Cl:Bi=1.94:5:9:1:0.06, corresponding to x=3.0%;

[0037] After grinding and mixing the raw materials evenly, put them into a corundum crucible; place the corundum crucible in a corundum boat and put it into a high-temperature box-type electric furnace. Strictly control the heating rate, pre-calcined at 773K for 5 hours, cooled to room temperature, and ground and mixed; then calcined at 1173K...

Embodiment 2

[0044] Strontium carbonate, boron trioxide, strontium chloride hexahydrate, and bismuth trioxide are selected as starting compound raw materials, and the molar ratio of each element is Sr:B:O:Cl:Bi=1.98:5:9:1:0.02 , corresponding to x=1.0%, weigh the compound raw materials respectively, after the mixture is ground evenly, put it into a corundum crucible, place the crucible in a corundum boat, and put it into a high-temperature box-type electric furnace. Strictly control the heating rate, pre-burn at 773K for 5 hours, cool to room temperature, grind and mix; then calcinate at 1173K for 10 hours, cool to room temperature with the furnace and grind evenly, the obtained sample is in a reducing atmosphere at 1173K (graphite powder is not completely burned) generated carbon monoxide) for 2.5 hours, cooled to room temperature, and ground to obtain bismuth-doped strontium chloropentaborate crystals. XRD pattern analysis shows that it is Sr 2 B 5 o 9 The Cl phase belongs to the orth...

Embodiment 3

[0046] Strontium carbonate, boric acid, strontium chloride hexahydrate, and bismuth trioxide are selected as starting compound raw materials, and the molar ratio of each element is Sr:B:O:Cl:Bi=1.98:5:9:1:0.02, corresponding to x = 1.0%, the compound raw materials were weighed respectively, and the mixture was ground evenly, and put into a corundum crucible, and the crucible was placed in a corundum boat, and put into a high-temperature box-type electric furnace. Strictly control the heating rate, pre-calcined at 773K for 5 hours, cooled to room temperature, and ground and mixed; then calcined at 1123K for 10 hours, cooled to room temperature with the furnace, and ground evenly. % nitrogen) for 1.5 hours, cooled to room temperature, and ground to obtain bismuth-doped strontium chloropentaborate crystals. XRD pattern analysis shows that it is Sr 2 B 5 o 9 The Cl phase belongs to the orthorhombic crystal system, and the doping of bismuth does not introduce other phases or imp...

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Abstract

The invention discloses a near-infrared luminescent bismuth doped strontium chloro-pentaborate crystal and a preparation method thereof. The general formula of the crystal is Sr2(1-x)B5O9Cl : 2xBi, 0.1% <= x <= 3.0%. respectively weighing strontium containing, boron containing, chlorine containing and bismuth containing compounds as raw materials; preforming pre-burning at 623-823 K for 3-6 hoursafter the raw materials are uniformly ground, performing cooling to room temperature, and performing grinding and well mixing; and performing calcining at 1,073-1,173 K for 4-6 hours, performing reaction for 15 min - 10 hours under a reducing atmosphere of 1,073-1,173 K on an obtained sample after performing cooling to the room temperature, and performing grinding to obtain the crystal after performing cooling to the room temperature. The near-infrared fluorescence full width at half maximum is greater than 200 nm and wider than the luminescence of rare earth ions, and has longer fluorescencelifetime, so that the crystal can be taken as a laser gain medium and applied to the fields of ultra-wideband wavelength tunable novel laser sources or ultrashort pulse lasers.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, and in particular relates to a bismuth-doped strontium chloropentaborate crystal with near-infrared light emission and a preparation method thereof. Background technique [0002] With the development of information technology and the increasing data transmission capacity of optical communication networks, replacing electrons with photons or optoelectronics as the carrier of information transmission has become the only way for the development of information technology. The successful development of rare-earth ion-doped fiber amplifiers and fiber lasers has greatly promoted the development of information technology. However, due to the characteristics of rare-earth ion-doped narrow-band forbidden transitions, rare-earth ion-doped fiber amplifiers can only be realized in a limited range of wavelengths. Optical amplification limits the capacity and speed of data transmission. Therefore...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/63
CPCC09K11/7485
Inventor 彭明营汪秀
Owner SOUTH CHINA UNIV OF TECH
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