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Method for preparing hydrogen-sensitive sensing material based on platinum nano-cluster/silicon carbide nanosheet

A sensing material and silicon carbide technology, which is applied in the field of preparation of hydrogen sensing materials, can solve the problems of long gas sensing response/recovery time, complex preparation method, baseline drift, etc., so as to improve the gas sensing performance and preparation method. The effect of simple, stable response values

Active Publication Date: 2019-07-05
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing noble metal-containing heterojunction silicon carbide nanomaterials still have the following defects: complex preparation methods, expensive equipment, long gas response / recovery time, and baseline drift, etc.

Method used

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  • Method for preparing hydrogen-sensitive sensing material based on platinum nano-cluster/silicon carbide nanosheet
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  • Method for preparing hydrogen-sensitive sensing material based on platinum nano-cluster/silicon carbide nanosheet

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reference example 1

[0033] a) Prepare graphene oxide / silicon powder mixed solution: mix silicon powder and graphene oxide in 100 ml of deionized water at a mass ratio of 1:1, and pulverize at 40 kHz and 100 watts of ultrasonic power until the solution is uniform;

[0034] b) Freeze-drying: After freezing the above mixed solution with liquid nitrogen, transfer it to a freeze dryer for freeze-drying, and obtain a graphene oxide / silicon powder mixture after all the water is removed;

[0035] c) Carbothermal reduction: put the above-mentioned graphene oxide / silicon powder mixture in a corundum crucible, under the protection of an argon atmosphere with a flow rate of 0.1-1.0 L / min, raise the temperature to 1400 °C, keep it warm for 2.0 hours, and cool naturally to room temperature;

[0036] d) Cleaning and drying: soak the carbothermally reduced product in a concentrated nitric acid: hydrofluoric acid mixed acid solution with a volume ratio of 3:1 for 6.0 hours, then wash with deionized water and dry ...

reference example 2

[0038] a) Prepare graphene oxide / silicon powder mixed solution: mix silicon powder and graphene oxide in 100 ml of deionized water at a mass ratio of 3:1, pulverize at 40 kHz, 100 watts of ultrasonic power until the solution is uniform;

[0039] b) Freeze-drying: After freezing the above mixed solution with liquid nitrogen, transfer it to a freeze dryer for freeze-drying, and obtain a graphene oxide / silicon powder mixture after all the water is removed;

[0040] c) Carbothermal reduction: put the above-mentioned graphene oxide / silicon powder mixture in a corundum crucible, under the protection of an argon atmosphere with a flow rate of 0.1-1.0 L / min, raise the temperature to 1400 °C, keep it warm for 2.0 hours, and cool naturally to room temperature;

[0041] d) Cleaning and drying: soak the carbothermally reduced product in a concentrated nitric acid: hydrofluoric acid mixed acid solution with a volume ratio of 3:1 for 6.0 hours, then wash with deionized water and dry to obta...

reference example 3

[0043] a) Prepare graphene oxide / silicon powder mixed solution: mix silicon powder and graphene oxide in 100 ml of deionized water at a mass ratio of 3:1, pulverize at 40 kHz, 100 watts of ultrasonic power until the solution is uniform;

[0044] b) Freeze-drying: After freezing the above mixed solution with liquid nitrogen, transfer it to a freeze dryer for freeze-drying, and obtain a graphene oxide / silicon powder mixture after all the water is removed;

[0045] c) Carbothermal reduction: put the above-mentioned graphene oxide / silicon powder mixture in a corundum crucible, under the protection of an argon atmosphere with a flow rate of 0.1-1.0 liters / min, heat up to 1500 °C, keep it warm for 3.0 hours, and cool naturally to room temperature;

[0046] d) Cleaning and drying: soak the carbothermally reduced product in a concentrated nitric acid: hydrofluoric acid mixed acid solution with a volume ratio of 3:1 for 6.0 hours, then wash with deionized water and dry to obtain the si...

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Abstract

A method for preparing a hydrogen-sensitive sensing material based on a platinum nano-cluster / silicon carbide nanosheet comprises the following steps of 1 surface treatment of a silicon carbide nanosheet, 2 soaking with an ethanol solution to which chloroplatinic acid is dropwise added and 3 conduction of a high-temperature reducing reaction. The surface of the hydrogen-sensitive sensing materialbased on the platinum nano-cluster / silicon carbide nanosheet is uniformly loaded with platinum nano-clusters, selectivity and responsiveness to hydrogen are high, hydrogen in air can be subjected to quick and high-sensitivity in-situ detection especially in a high-temperature environment, and a stable responding value and short responding / restoring time are achieved; and the preparation method issimple, and wide application prospects are achieved.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and in particular relates to a method for preparing a hydrogen-sensitive sensing material based on platinum nanoclusters / silicon carbide nanosheets. Background technique [0002] In key areas such as aerospace vehicle engines, nuclear reactor containment shells, and battlefield environment monitoring, there is an urgent need for gas sensors with high sensitivity, fast and stable response under extreme conditions such as high temperature, high corrosion, and high radiation. Silicon carbide (SiC) semiconductor has become a good material that can meet the needs of gas sensing applications in extreme environments due to its outstanding thermodynamics, chemical stability, and excellent electrical parameters. However, pure SiC materials suffer from poor gas sensing performance due to their low intrinsic carrier concentration. By constructing a noble metal two-dimensional nano-heterojunction on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24B22F1/00C01B32/984
CPCB22F9/24C01B32/984B22F2009/245B22F1/07B22F1/054
Inventor 王应德孙炼王兵
Owner NAT UNIV OF DEFENSE TECH
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