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AlGaN/SiC double-color ultraviolet detector

A UV detector, N-type technology, used in semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve the problems of low spectral responsivity, high dark current, and high turn-on voltage, and achieve improved resolution and detection wavelengths. Variable, crafting compatible effects

Pending Publication Date: 2019-06-25
南京紫科光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Among them, the AlGaN material is currently the most researched, and there have been corresponding commercial applications. Its advantage is that it can work in the sun-blind band when the Al composition is ≥ 0.4. AlGaN / GaN-based two-color ultraviolet detectors have been reported. However, sapphire lining The AlGaN material at the bottom has a large lattice mismatch and thermal mismatch, resulting in low spectral responsivity and high dark current. Due to the insulation of sapphire, only planar structures can be made, and the turn-on voltage is usually high.
Due to its low lattice defect density and wide bandgap, SiC materials can meet the response range of visible light-blind ultraviolet detectors. There have been reports of ultraviolet detectors with corresponding high avalanche gain factors. However, SiC-based devices are used to achieve solar-blind deep Ultraviolet detection also requires the installation of expensive filtering systems
Therefore, it is difficult for a single material system to realize the detection of two wave bands at the same time.

Method used

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  • AlGaN/SiC double-color ultraviolet detector
  • AlGaN/SiC double-color ultraviolet detector

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Embodiment Construction

[0025] The application will be described in further detail below in conjunction with the accompanying drawings. It is necessary to point out that the following specific embodiments are only used to further illustrate the application, and cannot be interpreted as limiting the protection scope of the application. The above application content makes some non-essential improvements and adjustments to this application.

[0026] Such as figure 1 As shown, the N-type SiC substrate layer 101 used in this embodiment has a thickness of 350 μm and a carrier concentration of 1×10 17 cm -3 ; On the front of the N-type SiC substrate layer 101, a 2 μm thick N-type heavily doped SiC ohmic layer 102 is epitaxially sequentially, and the doping concentration is 1×10 19 cm -3 ; 1 μm thick non-intentionally doped SiC absorber layer 103; 200 nm thick P-type SiC ohmic contact layer 104, doping concentration 2×10 19 cm -3 ; Finally, an epitaxial layer of 1 μm thick non-intentionally doped AlGaN ...

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Abstract

The invention discloses an AlGaN / SiC double-color ultraviolet detector. The detector comprises an N-type SiC substrate layer, an N-type heavily-doped SiC ohmic layer, an unintentionally-doped SiC absorption layer, a P-type SiC ohmic contact layer, an unintentionally-doped AlGaN absorption layer, an ohmic contact back electrode, a semitransparent Schottky electrode, a first contact electrode, a second contact electrode and a transparent medium passivation layer. The advantages of an AlGaN material system and an SiC material system are combined. The detector is based on low lattice defects of aSiC material, high visible light blind ultraviolet responsivity and small lattice mismatch and thermal mismatch with an AlGaN material, and the AlGaN layer is adopted as an absorption layer for solarblind detection and a filtering layer for visible light blind detection, thereby achieving the detection of two wavebands of one device, and greatly improving the resolution capability of the detectorfor a target object. The detector has the characteristics that the structure is simple, the manufacturing process is compatible with the current LED process, the detection wave band is variable, andthe ultraviolet spectrum analysis is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an AlGaN / SiC two-color ultraviolet detector. Background technique [0002] The emergence of a new generation of wide-bandgap semiconductor materials (bandgap>2.5eV), such as GaN, ZnO, diamond and SiC, has injected new vitality into the research and application development of high-performance ultraviolet detectors. In the field of ultraviolet detection applications, the absorption of ultraviolet light by wide-bandgap semiconductors is determined by their forbidden band widths, so they have natural frequency band selectivity without the need for additional filters. At the same time, wide-bandgap semiconductor materials usually have good thermal conductivity , high electron drift saturation speed and good chemical stability, it is an ideal material for making ultraviolet detection devices. [0003] Among them, the AlGaN material is currently the most researche...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0336H01L31/18
CPCY02P70/50
Inventor 谢峰杨国锋
Owner 南京紫科光电科技有限公司
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