AlGaN/SiC double-color ultraviolet detector
A UV detector, N-type technology, used in semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve the problems of low spectral responsivity, high dark current, and high turn-on voltage, and achieve improved resolution and detection wavelengths. Variable, crafting compatible effects
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[0025] The application will be described in further detail below in conjunction with the accompanying drawings. It is necessary to point out that the following specific embodiments are only used to further illustrate the application, and cannot be interpreted as limiting the protection scope of the application. The above application content makes some non-essential improvements and adjustments to this application.
[0026] Such as figure 1 As shown, the N-type SiC substrate layer 101 used in this embodiment has a thickness of 350 μm and a carrier concentration of 1×10 17 cm -3 ; On the front of the N-type SiC substrate layer 101, a 2 μm thick N-type heavily doped SiC ohmic layer 102 is epitaxially sequentially, and the doping concentration is 1×10 19 cm -3 ; 1 μm thick non-intentionally doped SiC absorber layer 103; 200 nm thick P-type SiC ohmic contact layer 104, doping concentration 2×10 19 cm -3 ; Finally, an epitaxial layer of 1 μm thick non-intentionally doped AlGaN ...
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