Diamond-based field-effect transistor with low work function conductive gate and its preparation method
A low work function, conductive gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problem of reducing the surface channel carrier concentration and mobility, sacrificing the external transconductance of the source and drain maximum current of the device, etc. problems, to achieve the effect of realizing the characteristics of normally-off devices, ensuring the ability of current passing, and ensuring the ability of current transport
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Embodiment 1
[0065] A method for preparing a normally-off surface channel diamond field-effect transistor with a low work function conductive gate according to an embodiment of the present invention includes the following steps:
[0066] 1) The diamond substrate 1 grown by high temperature and high pressure (HPHT) technology is cleaned successively by using the standard cleaning process for diamond substrates, followed by inorganic and organic cleaning, and blown dry with nitrogen gas for later use.
[0067] 2) Deposit a single crystal diamond film 2 on the cleaned diamond substrate using microwave plasma vapor chemical deposition (MPCVD), the plasma power is 1kW, the chamber pressure is 100Torr, and the total gas flow is 500sccm, and the obtained single crystal diamond The thickness of the film is 0.1μm, the resistivity is greater than 100MΩ cm, the root mean square (RMS) surface roughness is 0.5nm, and the half-peak width of the Raman curve is about 3cm -1 , XRD rocking curve half width ...
Embodiment 2
[0074] A method for preparing a normally-off surface channel diamond field-effect transistor with a low work function conductive gate according to an embodiment of the present invention includes the following steps:
[0075] 1) The diamond substrate 1 grown by the vapor phase epitaxy (CVD) technique is successively cleaned inorganically and organically by using a standard diamond substrate cleaning process, and blown dry with nitrogen gas for later use.
[0076] 2) Deposit a single crystal diamond film 2 on the cleaned diamond substrate using microwave plasma vapor chemical deposition (MPCVD), the plasma power is 1kW, the chamber pressure is 100Torr, and the total gas flow is 500sccm, and the obtained single crystal diamond The thickness of the film is 10μm, the resistivity is greater than 100MΩ cm, the root mean square (RMS) surface roughness is 0.5nm, and the half-peak width of the Raman curve is about 3cm -1 , XRD rocking curve half width less than 50arcsec.
[0077] 3) Co...
Embodiment 3
[0083] A method for preparing a normally-off surface channel diamond field-effect transistor with a low work function conductive gate according to an embodiment of the present invention includes the following steps:
[0084] 1) The diamond substrate 1 grown by high temperature and high pressure (HPHT) technology is cleaned successively by using the standard cleaning process for diamond substrates, followed by inorganic and organic cleaning, and blown dry with nitrogen gas for later use.
[0085] 2) Deposit a single crystal diamond film 2 on the cleaned diamond substrate using microwave plasma vapor chemical deposition (MPCVD), the plasma power is 1kW, the chamber pressure is 100Torr, and the total gas flow is 500sccm, and the obtained single crystal diamond The thickness of the film is 1 μm, the resistivity is greater than 100MΩ cm, the root mean square (RMS) surface roughness is 0.5nm, and the half-peak width of the Raman curve is about 3cm -1 , XRD rocking curve half width l...
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