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A diamond-based multi-channel barrier control field effect transistor and its preparation method

A diamond and field regulation technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as reducing surface channel carrier concentration and mobility, sacrificing the maximum current of source and drain, and external transconductance. To achieve the effect of ensuring current transport capacity and strong carrier depletion capacity

Active Publication Date: 2021-01-19
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing normally-off devices are all realized by converting part of the hydrogen terminals into oxygen terminals, partially desorbing the surface adsorbates, and compensating the dielectric layer with the opposite charge, which reduces the surface channel carrier concentration and Mobility, sacrificing the maximum source-drain current of the device part, external transconductance and other performance

Method used

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  • A diamond-based multi-channel barrier control field effect transistor and its preparation method
  • A diamond-based multi-channel barrier control field effect transistor and its preparation method
  • A diamond-based multi-channel barrier control field effect transistor and its preparation method

Examples

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Effect test

Embodiment 1

[0062] A method for preparing a diamond-based multi-channel barrier control field effect transistor, comprising the following steps:

[0063] 1) The diamond substrate 1 grown by high temperature and high pressure (HPHT) technology is cleaned successively by using the standard cleaning process for diamond substrates, followed by inorganic and organic cleaning, and blown dry with nitrogen gas for later use.

[0064] 2) Deposit a single crystal diamond film 2 on the cleaned diamond substrate using microwave plasma vapor chemical deposition (MPCVD), the plasma power is 1kW, the chamber pressure is 100Torr, and the total gas flow is 500sccm, and the obtained single crystal diamond The thickness of the film is 1μm, the resistivity is greater than 100MΩ·cm, the root mean square surface roughness is less than 0.5nm, and the half-peak width of the Raman curve is less than 2cm -1 , XRD rocking curve half width less than 30arcsec.

[0065] 3) Control the microwave plasma power so that t...

Embodiment 2

[0070] A method for preparing a diamond-based multi-channel barrier control field-effect transistor comprises the following steps:

[0071] 1) The diamond substrate 1 grown by CVD technology is successively cleaned inorganically and organically by using a standard cleaning process for diamond substrates, and blown dry with nitrogen gas for later use.

[0072] 2) Deposit a single crystal diamond film 2 on the cleaned diamond substrate using microwave plasma vapor chemical deposition (MPCVD), the plasma power is 1kW, the chamber pressure is 100Torr, and the total gas flow is 500sccm, and the obtained single crystal diamond The thickness of the film is 1μm, the resistivity is greater than 100MΩ·cm, the root mean square surface roughness is less than 0.5nm, and the half-peak width of the Raman curve is less than 2cm -1 , XRD rocking curve half width less than 30arcsec.

[0073] 3) Control the power of the microwave plasma so that the chamber temperature is 700° C., keep the hydro...

Embodiment 3

[0078] A method for preparing a diamond-based multi-channel barrier control field-effect transistor comprises the following steps:

[0079] 1) The diamond substrate 1 grown by CVD technology is successively cleaned inorganically and organically by using a standard cleaning process for diamond substrates, and blown dry with nitrogen gas for later use.

[0080] 2) Deposit a single crystal diamond film 2 on the cleaned diamond substrate using microwave plasma vapor chemical deposition (MPCVD), the plasma power is 1kW, the chamber pressure is 100Torr, and the total gas flow is 500sccm, and the obtained single crystal diamond The thickness of the film is 1μm, the resistivity is greater than 100MΩ·cm, the root mean square surface roughness is less than 0.5nm, and the half-peak width of the Raman curve is less than 2cm -1 , XRD rocking curve half width less than 30arcsec.

[0081] 3) Control the microwave plasma power so that the chamber temperature is 900° C., keep the hydrogen gas...

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Abstract

The invention discloses a diamond-based multi-channel barrier regulation and control field-effect transistor and a preparation method thereof. The field-effect transistor comprises a diamond substrate, and is characterized in that the diamond substrate is provided with a single crystal diamond epitaxial film; the single crystal diamond epitaxial film is provided with mesa regions; the single crystal diamond epitaxial film is provided with etching regions; each mesa region is internally provided with a multi-channel trench region and the etching region; each multi-channel trench region includesa two-dimensional hole gas conductive layer; each etching region includes an oxygen, fluorine or nitrogen terminal; a source electrode and a drain electrode are located at two sides of the mesa regions; and a grid electrode is arranged in the multi-channel trench regions and the etching regions between the source electrode and the drain electrode, and the grid electrode is arranged in the etchingregions on the single crystal diamond epitaxial film at the same time. The transistor device disclosed by the invention can obtain normally-closed characteristics without damaging the performance ofthe conductive trenches. Meanwhile, the multi-channel structure also can ensure the current passing ability between the source and the drain of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a normally-off diamond-based field-effect transistor and a preparation method thereof, in particular to a diamond-based multi-channel potential barrier regulation field-effect transistor and a preparation method thereof. Background technique [0002] Semiconductor single crystal materials have gone through four generations of development. The first generation of Si and Ge semiconductors brought mankind into the information age, and at the same time drove the intelligence and informatization of electronic systems. The second-generation semiconductors (GaAs, InP, MCT, etc.) have brought us optoelectronic devices, power electronic devices, radio frequency electronic devices, and space radiation-resistant devices, which have triggered revolutions in information fields such as wireless communications and optical communications. The third-generation wide-band...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/812H01L21/04
CPCH01L29/66045H01L29/812
Inventor 王玮王宏兴问峰王艳丰林芳张明辉张景文卜忍安侯洵
Owner XI AN JIAOTONG UNIV
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