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Joint material, semiconductor device and manufacturing method of semiconductor device

A technology for bonding materials and semiconductors, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc. It can solve the problems of low operating temperature, inability to effectively release high internal stress, and low bonding reliability. The effect of low manufacturing cost, buffering internal stress, and improving bonding reliability

Active Publication Date: 2019-05-14
XIAN RUIXIN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a bonding material that can form a bonding layer that is resistant to high temperature, multiple reflows, and high bonding reliability, so as to solve the problem of lower operating temperature caused by the limitation of bonding materials in existing semiconductor devices ; and existing bonding materials cannot effectively release high internal stress in a wide temperature range, resulting in low bonding reliability

Method used

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  • Joint material, semiconductor device and manufacturing method of semiconductor device
  • Joint material, semiconductor device and manufacturing method of semiconductor device
  • Joint material, semiconductor device and manufacturing method of semiconductor device

Examples

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Effect test

Embodiment 1

[0070] A method of manufacturing a semiconductor device, comprising the steps of:

[0071] S10. Provide a first substrate with metal copper layers on both sides of the surface, and set a bonding material A on the metal copper layer on one side surface of the first substrate. The bonding material A includes a porosity of 10%, and a thickness of A foamed copper support layer of 5 μm and a SAC305 solder layer with a thickness of 5 μm arranged on the opposite side surfaces of the foamed copper support layer; and then semiconductor chips, resistors, capacitors, and connecting columns are arranged on the bonding material A , terminal, and then in an inert gas atmosphere, the first bonding process is performed at a bonding temperature of 250 ° C. The SAC305 solder reacts with the metallic copper layer of the first substrate and the foamed copper of the supporting layer to form a high melting point intermetallic compound Cu. 3 Sn, and SAC305 solder react with metal (such as silver) on...

Embodiment 2

[0075] A method of manufacturing a semiconductor device, comprising the steps of:

[0076] S10. Provide a first substrate with metal copper layers on both sides of the surface, and set a bonding material B on the metal copper layer on one side surface of the first substrate. The bonding material B includes a porosity of 10%, and a thickness of A foamed copper support layer of 10 μm, a reaction layer copper layer with a thickness of 2 μm arranged on opposite sides of the support layer, and a Sn-0.7Cu solder layer with a thickness of 5 μm arranged on the reaction layer; and then the semiconductor chip , resistors, capacitors, connecting columns, and terminals are arranged on the bonding material B, and then the first bonding process is carried out in an inert gas atmosphere at a bonding temperature of 250°C, and the Sn-0.7Cu solder and the metallic copper layer of the first substrate , the reaction layer copper layer reacts to form a high melting point intermetallic compound Cu ...

Embodiment 3

[0080] A method of manufacturing a semiconductor device, comprising the steps of:

[0081] S10. Provide a first substrate with metal copper layers on both sides of the surface, and set a bonding material C on the metal copper layer on one side surface of the first substrate. The bonding material C includes a porosity of 10%, and a thickness of A foamed nickel support layer of 10 μm, a reaction layer nickel layer with a thickness of 2 μm arranged on the opposite sides of the support layer, and a Sn-0.7Cu solder layer with a thickness of 5 μm arranged on the reaction layer; and then the semiconductor chip , resistors, capacitors, connecting columns, and terminals are arranged on the bonding material C, and then the first bonding process is performed in an inert gas atmosphere at a bonding temperature of 250°C, and the Sn-0.7Cu solder and the metallic copper layer of the first substrate , the reaction layer nickel layer reacts to form a high melting point intermetallic compound C...

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Abstract

The embodiment of the invention provides a joint material. The joint material comprises a supporting layer and solder layers arranged on the opposite side surfaces of the supporting layer. The supporting layer comprises at least one of Cu metal, Ni metal, Ag metal, Ti metal, Zn metal and alloys of the Cu metal, the Ni metal, the Ag metal, the Ti metal, the Zn metal, the supporting layer is provided with a porous structure, and the solder layers comprise at least one of tin-based solder and indium-based solder. According to the joint material, solder of the solder layers and the metal or alloysof the supporting layer can react at the joint temperature to form a high melting point intermetallic compound with a melting point higher than the joint temperature, so that a high temperature resistant joint layer is obtained through lower joint temperature, and multiple reflux can be resisted; and the supporting structure is provided with the porous structure, and the porous structure of the supporting layer is retained in a joint layer to effectively buffer the internal stress and improve the joint reliability. The embodiment of the invention further provides a semiconductor device usingthe joint material to joint and a manufacturing method of the semiconductor device.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor devices, and in particular, to a bonding material, a semiconductor device and a manufacturing method thereof. Background technique [0002] The manufacture of semiconductor devices is generally achieved by solder bonding, and with the continuous development of semiconductor power modules towards high integration and high density, higher requirements are placed on the bonding performance of bonding materials. High integration generally requires multiple reflow soldering of different devices, and high density requires the formation of high temperature resistant joints. However, multiple reflow soldering requires solders with different melting points. Generally speaking, the melting point of the solder in the previous reflow process is higher than that of the subsequent process, so as to prevent the solder used in the previous process from being re-melted during reflow bon...

Claims

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Application Information

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IPC IPC(8): H01L23/488H01L25/16H01L21/60
CPCH01L2224/33H01L2924/19105
Inventor 郎丰群胡竣富吴虹王军鹤
Owner XIAN RUIXIN TECH CO LTD
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