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Preparation of Nano-Silicon Carbide by Sol-Gel Method

A sol-gel method, nano-silicon carbide technology, applied in the direction of silicon carbide, carbide, etc., can solve the problems of difficult dispersion, difficult to mix the carbon source and silicon source uniformly, etc., to reduce the reduction temperature, good dispersibility, and reduced reaction. energy barrier effect

Active Publication Date: 2021-08-10
LANXI ZHIDE ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a process for preparing nano-silicon carbide by sol-gel method, which solves the problem that carbon source and silicon source are difficult to mix evenly and disperse in the process of preparing silicon carbide nano-materials question

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  • Preparation of Nano-Silicon Carbide by Sol-Gel Method

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[0038] Using the sol-gel method to prepare silicon dioxide, homogeneous mixing, high-temperature reduction and dispersion classification, the prepared silicon carbide powder has a narrow particle size distribution and high purity.

[0039] In order to better understand the above-mentioned technical solution, the above-mentioned technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0040] The embodiment of the present invention provides a process for preparing nano-silicon carbide by sol-gel method, comprising the following steps:

[0041] S1: Preparation of silica by sol-gel method;

[0042] S2: The silicon dioxide prepared in the step S1 is homogeneously mixed with a homogenizer, a carbon source and a burning reducing agent;

[0043] S3: high temperature reduction;

[0044] S4: Decentralized grading.

[0045] The present invention prepares silicon dioxide by a sol-gel method, and the prepar...

Embodiment 1

[0066] A kind of technology that utilizes sol-gel method to prepare nano-silicon carbide, comprises the following steps:

[0067] S1: Preparation of silica by sol-gel method;

[0068] S1-1: 1 part of ammonia water, 2 parts of ethanol, and 10 parts of distilled water are mixed to obtain solution A;

[0069] S1-2: Mix 1 part of ethyl orthosilicate, 10 parts of ethanol, and 5 parts of distilled water to obtain solution B;

[0070] S1-3: Add solution B to solution A and react for 12 hours;

[0071] S1-4: Washing to obtain silica.

[0072] S2: The silicon dioxide prepared in the step S1 is homogeneously mixed with a homogeneous agent, a carbon source, and a burning reducing agent;

[0073] S2-1: The silicon dioxide obtained in S1 is dispersed in a liquid medium, a dispersant is added, and ultrasonically stirred to obtain a dispersion liquid; the dispersant is one or more of an aqueous dispersant and an oily dispersant. The homogenizer is NaCl, KCl, ZnCl 2 , one or more of LiCl...

Embodiment 2

[0080] A kind of technology that utilizes sol-gel method to prepare nano-silicon carbide, comprises the following steps:

[0081] S1: Preparation of silica by sol-gel method;

[0082] S1-1: 1 part of ammonia water, 2 parts of ethanol, and 10 parts of distilled water are mixed to obtain solution A;

[0083] S1-2: Mix 1 part of ethyl orthosilicate, 10 parts of ethanol, and 5 parts of distilled water to obtain solution B;

[0084] S1-3: Add solution B to solution A and react for 12 hours;

[0085] S1-4: Washing to obtain silica.

[0086] S2: The silicon dioxide prepared in the step S1 is homogeneously mixed with a homogeneous agent, a carbon source, and a burning reducing agent;

[0087] S2-1: The silicon dioxide obtained in S1 is dispersed in a liquid medium, a dispersant is added, and ultrasonically stirred to obtain a dispersion liquid; the dispersant is one or more of an aqueous dispersant and an oily dispersant. The homogenizer is NaCl, KCl, ZnCl 2 , one or more of LiCl...

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Abstract

The invention provides a process for preparing nanometer silicon carbide by using a sol-gel method, and relates to the technical field of silicon carbide preparation. The method includes the following steps: S1: preparing silica by sol-gel method; S2: homogeneously mixing the silica prepared in step S1 with homogenizer, carbon source, and sintering reducing agent; S3: high-temperature reduction; S4 : Scattered classification. The present invention prepares silicon dioxide by a sol-gel method, and the prepared silicon dioxide is well dispersed; monodispersed silicon dioxide is homogeneously mixed with a homogeneous agent, a carbon source and a burning-assisting reducing agent, and then the carbonized carbonized product prepared by high-temperature reduction is carried out. The dispersion of silicon is good, which solves the problems of agglomeration and other problems in the preparation process of nano-silicon carbide. The reaction energy is activated by the sintering reducing agent, which lowers the reaction energy barrier, thereby lowering the reduction temperature of silicon dioxide, and effectively preventing the growth of high-temperature silicon carbide particles. Since the carbon source is uniformly mixed with the monodispersed silicon dioxide, the reaction process is reduced, thereby helping to increase the reduction reaction speed.

Description

technical field [0001] The invention relates to the technical field of preparing silicon carbide, in particular to a process for preparing nanometer silicon carbide by using a sol-gel method. Background technique [0002] Silicon carbide has many excellent physical and chemical properties, such as high hardness, high strength, stable chemical properties, and good high temperature oxidation resistance. And it also has good chemical compatibility with many metals and metal oxides, and can be used to prepare metal-based, ceramic-based and polymer-based composite materials, in which it plays a role in strengthening, toughening and hardening, and can also be used directly Used as grinding material or prepared into a certain shape of abrasive tools, it is used for surface grinding and polishing of metal, ceramics, glass, stone and so on. [0003] In recent years, with the development of the electronics and computer industries, the demand for monocrystalline silicon oxide wafers i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/97
CPCC01B32/97
Inventor 房冰伍小波陈青华刘江平张丽娟
Owner LANXI ZHIDE ADVANCED MATERIALS CO LTD
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