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Preparation method of ultrathin cubic born nitride film

The technology of cubic boron nitride and boron nitride, which is applied in the field of cubic boron nitride preparation, can solve the problems of low synthesis rate and low utilization rate of raw materials, and achieve the effects of low cost, easy industrialized mass production and improved conversion rate.

Inactive Publication Date: 2019-03-22
YANCHENG TEACHERS UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the existing high-temperature and high-pressure synthesis of cubic boron nitride is to directly convert hexagonal boron nitride into cubic boron nitride, which requires higher pressure and temperature to achieve, and the conversion rate of cubic boron nitride is usually 30% to 30%. 55%, the synthesis rate is low, resulting in low utilization rate of raw materials

Method used

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  • Preparation method of ultrathin cubic born nitride film
  • Preparation method of ultrathin cubic born nitride film
  • Preparation method of ultrathin cubic born nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Put 4.73g of sodium amide and 3.5g of boron oxide into an autoclave, raise it from room temperature to 600°C at a rate of 10°C / min, and maintain at 600°C for 6 hours.

[0026] (2) After washing the product with concentrated hydrochloric acid and deionized water, put it into a vacuum oven, heat it to 60° C., and keep it for 4 hours.

[0027] (3) Put the trigonal boron nitride powder into a ball mill jar, pour in nitrogen gas as a protective gas, and ball mill it at room temperature for 20 hours at a speed of 700 r / min to obtain two-dimensional boron nitride.

[0028] (4) Fully mix two-dimensional boron nitride powder with a mass ratio of 100:5:5:7, lithium nitride, titanium nitride, and aluminum nitride powder, and press it into a cylindrical shape.

[0029] (5) Put it into the top press, and process under high temperature and high pressure, the temperature is 1400°C, the pressure is 4.0GPa, and the time is 5min.

[0030] (6) Take out the product, and use acid-base ...

Embodiment 2

[0032] (1) Put 4.73g of sodium amide and 3.5g of boron oxide into an autoclave, raise it from room temperature to 600°C at a rate of 10°C / min, and maintain at 600°C for 8 hours.

[0033] (2) After washing the product with concentrated hydrochloric acid and deionized water, put it into a vacuum oven, heat it to 60° C., and keep it for 4 hours.

[0034] (3) Put the trigonal boron nitride powder into a ball mill jar, pour in nitrogen gas as a protective gas, and ball mill it at room temperature for 20 hours at a speed of 700 r / min to obtain two-dimensional boron nitride.

[0035] (4) Fully mix two-dimensional boron nitride powder with a mass ratio of 100:5:5:7, lithium nitride, titanium nitride, and aluminum nitride powder, and press it into a cylindrical shape.

[0036] (5) Put it into the top press, and process under high temperature and high pressure, the temperature is 1400°C, the pressure is 4.0GPa, and the time is 5min.

[0037] (6) Take out the product, and use acid-base ...

Embodiment 3

[0039] (1) Put 4.73g of sodium amide and 3.5g of boron oxide into an autoclave, raise it from room temperature to 600°C at a rate of 10°C / min, and maintain at 600°C for 6 hours.

[0040] (2) After washing the product with concentrated hydrochloric acid and deionized water, put it into a vacuum oven, heat it to 60° C., and keep it for 4 hours.

[0041] (3) Put the trigonal boron nitride powder into a ball mill jar, pour in nitrogen gas as a protective gas, and ball mill for 10 hours at room temperature with a rotation speed of 700 r / min to obtain two-dimensional boron nitride.

[0042] (4) Fully mix two-dimensional boron nitride powder with a mass ratio of 100:5:5:7, lithium nitride, titanium nitride, and aluminum nitride powder, and press it into a cylindrical shape.

[0043] (5) Put it into the top press, and process under high temperature and high pressure, the temperature is 1400°C, the pressure is 4.0GPa, and the time is 5min.

[0044] (6) Take out the product, and use ac...

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Abstract

The invention provides a preparation method of an ultrathin cubic born nitride film. The preparation method of the ultrathin cubic born nitride film comprises the following steps: taking sodium amideand boron oxide as reaction precursors, putting the reaction precursors into a high-pressure kettle, heating and performing reaction to obtain trigonal boron nitride powder, and performing ball milling at normal temperature to obtain two-dimensional boron nitride; and completely mixing the two-dimensional boron nitride powder and an accelerant material, pressing into a cylindrical shape, putting into a top press, performing high-temperature and high-pressure treatment and performing acid and alkali purification to obtain a cubic born nitride film material. According to the method disclosed bythe method, the cubic boron nitride is prepared from the two-dimensional trigonal boron nitride which is arranged in an ABC way, so that the conversion rate can be increased and waste of raw materialsis reduced; and the prepared ultrathin cubic born nitride film enlarges the application field of the cubic boron nitride and has the characteristics of simplicity in preparation, low cost and easy inindustrialized quantity production.

Description

technical field [0001] The invention relates to the field of cubic boron nitride preparation, in particular to a method for preparing a cubic boron nitride thin film using trigonal boron nitride as a raw material. Background technique [0002] Cubic boron nitride is a superhard material second only to diamond in hardness. It not only has many excellent properties of diamond, but also has higher thermal stability and chemical inertness to iron group metals and their alloys. The use of cubic boron nitride is a great contribution to metal processing, leading to a revolutionary change in grinding, which is the second leap in grinding technology. At the same time, it has been applied in a series of high-tech fields due to its excellent thermal, electrical, optical and acoustic properties, and has become a promising functional material. At present, the existing high-temperature and high-pressure synthesis of cubic boron nitride is to directly convert hexagonal boron nitride into...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/5831C04B35/622C04B35/645
CPCC04B35/5831C04B35/62218C04B35/645C04B2235/3852C04B2235/3865C04B2235/3886
Inventor 苗中正田华雨
Owner YANCHENG TEACHERS UNIV
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