Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for modifying carbon nano tube by using poly3-hexylthiophene and modified carbon nano tube

A technology of hexylthiophene and carbon nanotubes, applied in the field of carbon nanotubes, can solve the problems of difficult bonding and inability of carbon nanotubes to enhance the stability of poly-3-hexylthiophene, and achieve the effect of reducing difficulty and enhancing stability.

Inactive Publication Date: 2019-03-15
SHENZHEN XIWAN TECH CO LTD
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a method for modifying carbon nanotubes utilizing poly-3-hexylthiophene and modified carbon nanotubes, aiming to solve the problem of poly-3-hexylthiophene being difficult to combine with poly-3-hexylthiophene in the prior art. The combination of carbon nanotubes leads to the inability to enhance the stability of poly-3-hexylthiophene through carbon nanotubes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for modifying carbon nano tube by using poly3-hexylthiophene and modified carbon nano tube
  • Method for modifying carbon nano tube by using poly3-hexylthiophene and modified carbon nano tube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] 3-Dodecylthiophene (19.34 g, 77.70 mmol) was dissolved in 100 mL of THF, after which N-bromosuccinimide (27.92 g, 161 mmol) was slowly added to the above solution over 5 minutes to give 2 , 5-dibromo-3-dodecylthiophene solution, the solution was stirred at room temperature for 2 hours, and the THF solvent was removed by distillation under reduced pressure once; then 250 mL of hexane was added to precipitate all the succinimide, Then, the hexane solvent was removed by distillation under reduced pressure twice; then, Kugelrohr distillation was used to distill at 120°C and 0.016T to obtain 2,5-dibromo-3-dodecylthiophene as a colorless transparent oil ;

[0039] Dissolve the above 2,5-dibromo-3-dodecylthiophene (1.23 g, 3.08 mmol) in 18 mL of THF, then add 3.05 mL of CH dissolved in butyl ether 3 MgBr, reflux at 120~150°C for 1 hour, add catalyst Ni(dppp)Cl 2 (16.5mg, 1mol%), reflux and stir for 2 hours to carry out catalytic reaction; after the reaction, inject the mixed s...

Embodiment 2

[0041] (1) Preparation of carbon nanotube powder: Deposit a catalyst layer on the substrate, place it in a chemical vapor deposition reactor and pass through a protective gas, raise the temperature to 650°C, and then pass in a carbon source gas, the flow rate is controlled at 2L / min, and the reaction is 25min , thereby generating carbon nanotube arrays on the substrate. Among them, the carbon nanotube array is a multi-walled nanotube array, the average length of the number is 760 μm, and the diameter of the carbon nanotube is 10-15 nm;

[0042] (2) Preparation of multi-walled carbon nanotube-poly(3-hexylthiophene) nano-compounds (i.e. modified carbon nanotubes): prepare the prepared carbon nanotube array together with the substrate; prepare another substrate, and prepare The film-like poly(3-hexylthiophene) was placed on the substrate, keeping the thickness of the film within the range of 1-3mm; two substrates were placed parallel and side by side under a high-energy ultraviol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for modifying a carbon nano tube by using poly3-hexylthiophene and a modified carbon nano tube. The method for modifying the carbon nano tube by using the poly3-hexylthiophene comprises the steps of providing a carbon nano tube array and the poly3-hexylthiophene; and placing the poly3-hexylthiophene and the carbon nano tube array in a shielded gas atmosphere to carry out ultraviolet light treatment so that the poly3-hexylthiophene can have graft polymerization with the carbon nano tube array so as to obtain the modified carbon nano tube. The method for modifying the carbon nano tube by using the poly3-hexylthiophene and the modified carbon nano tube, disclosed by the invention, have the advantages that a problem that the stability of the poly3-hexylthiophene cannot be enhanced by using the carbon nano tube because the poly3-hexylthiophene is hard to be combined with the carbon nano tube is solved.

Description

technical field [0001] The invention relates to the technical field of carbon nanotubes, in particular to a method for modifying carbon nanotubes by using poly-3-hexylthiophene and the modified carbon nanotubes. Background technique [0002] Polythiophene polymers, especially poly-3-hexylthiophene, have been an important and commonly used electroactive compound, often used in polymer LEDs, organic transistors, solar cells, photoresistors, antistatic coatings, and photoelectric detection. etc. However, there must be an irradiation process of ultraviolet rays or electron beams in the process of making the above-mentioned micro-nano-scale products, and the above-mentioned irradiation process often causes photodegradation of polythiophene polymers, which in turn leads to deterioration of the entire product performance or even scrapping. [0003] Carbon nanotubes are nanoscale tubular carbon molecules with many superior physical and chemical properties, such as ultra-high elasti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G83/00C08L87/00C08L65/00C08K9/10C08K3/04
CPCC08G83/001C08K3/041C08K9/10C08K2201/003C08K2201/004C08K2201/011C08L65/00C08L87/005
Inventor 邓飞
Owner SHENZHEN XIWAN TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products