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Connection substrate

一种基板、陶瓷基板的技术，应用在电气连接印刷元件、印刷元件电连接形成、印刷电路等方向，能够解决球状导电物质配置困难、陶瓷与球状导电物质热膨胀差等问题

Inactive Publication Date: 2018-11-23
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, cracking and warping are prone to occur due to the difference in thermal expansion between ceramics and spherical conductive substances
In addition, if the number of through-holes decreases, the arrangement of spherical conductive substances becomes difficult

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] by reference Figure 1 to Figure 6 As described above, a connection board is produced.

[0066] Specifically, first, a slurry obtained by mixing the following components was prepared.

[0067] (raw material powder)

[0068]

[0069] Using the doctor blade method, the slurry is formed into a ribbon with a thickness of 300 μm after firing, and the diameter is the diameter after firing. Cut off. The obtained powder molded body was calcined (preliminarily fired) at 1240°C in the atmosphere, the substrate was placed on a molybdenum plate, and the temperature increase rate from 1300°C to 1550°C was set at 50°C in an atmosphere of hydrogen 3: nitrogen 1 °C / h, kept at 1550 °C for 2.5 hours, and fired to obtain a semi-finished substrate.

[0070] This semi-finished substrate was subjected to laser processing under the following conditions, thereby forming through-holes with the following dimensions.

[0071]

[0072]

[0073] Next, the melt (dross) adhering to the...

Embodiment 2、3

[0086] A connection substrate was produced in the same manner as in Example 1.

[0087] However, the area ratio of the pores at the cross section of the through conductor, the area ratio of the glass phase in the first part, the area ratio of the voids in the first part, the area ratio of the glass phase in the second part, and The area ratio of the voids in the second part. In order to change these parameters, adjustment was made by changing the melting temperature of the glass layer from 700°C to 750°C and 800°C to lower the viscosity of the glass.

[0088] Then, for each of the obtained ceramic substrates, the number of through-conductors in which liquid leakage was observed was measured with respect to 10,000 through-conductors provided on one ceramic substrate, and is shown in Table 1.

[0089] [Table 1]

[0090]

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Abstract

A through-conductor 11 provided within a through-hole in a ceramic substrate has a metal porous body 20, glass phases 17, 19 formed in air holes 16A-16D in the metal porous body 20, and voids 30, 31 within the air holes. The area ratio of the air holes in a cross-section of the through-conductor 11 is 5-50%. When the through-conductor 11 is divided into a first portion 11A on a first-main-surface11a side and a second portion 11B on a second-main-surface 11b side as viewed along the thickness direction B of the ceramic substrate, the area ratio of the glass phases in the first portion 11A is greater than the area ratio of the glass phases in the second portion 11B, and the area ratio of the voids in the first portion 11A is less than the area ratio of the voids in the second portion 11B.

Description

technical field [0001] The present invention relates to an electrical connection substrate in which through-hole conductors such as through-hole conductors are formed in through-holes. Background technique [0002] As a substrate on which electronic devices such as SAW filters are mounted, a substrate having a structure in which a through-hole is provided in an insulating substrate such as a ceramic and filled with a conductor to form a through-electrode (through-hole substrate) is used. In recent years, along with the miniaturization of communication equipment typified by mobile phones, miniaturization and thinning of electronic devices used are also required, and through-hole substrates, which are components thereof, are also required to be thinner. [0003] In addition, for miniaturization, the wiring on the surface of the substrate also needs to be miniaturized, and therefore, reduction in the diameter of the penetration electrode and high precision in its position are r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/11H01L23/13H05K1/09H05K3/40
CPCH01L23/13H05K1/09H05K1/11H05K3/40H01L23/49827H01L23/15H05K1/0306H01L2924/00H05K2201/0116H05K3/4061H05K3/4629H01L2924/0002H01L21/486H05K1/115H05K3/4038H03H9/058H05K3/28H05K2201/09745H05K2203/1131H05K2203/1147
Inventor 井出晃启高垣达朗宫泽杉夫
Owner NGK INSULATORS LTD
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