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Aln buffer layer of led and its epitaxial growth method

A technology of epitaxial growth and buffer layer, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult growth of GaN single crystal thin film, large crystal lattice, mismatch thermal mismatch, etc., and achieve the improvement of crystal quality and optoelectronics performance, grain uniformity, dislocation suppression effect

Active Publication Date: 2019-11-08
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to directly grow high-quality GaN single crystal thin films on heterogeneous substrates due to the large lattice and thermal mismatch between GaN and sapphire substrates.

Method used

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  • Aln buffer layer of led and its epitaxial growth method
  • Aln buffer layer of led and its epitaxial growth method
  • Aln buffer layer of led and its epitaxial growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] The present invention utilizes the magnetron sputtering reaction equipment to prepare the AlN buffer layer on the sapphire substrate, with the metal aluminum (Al) that purity is 5.5N as target material, with helium (Ar), nitrogen (N 2 ) and oxygen (O 2 ) is the reactive gas, and the sputtering bias is set to 3000V. Using MOCVD equipment to prepare GaN-based LED epitaxial wafers, using trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia (NH3) as sources of Ga, In, Al and N , with silane (SiH 4 ) and dimagnesium (Cp2Mg) as n-type and p-type doping sources. The specific growth method is as follows:

[0044] Please refer to figure 1 and figure 2 , an ALN ​​buffer layer of an LED and an epitaxial growth method thereof, comprising:

[0045] Growing AlN-1 thin film layer, cooling sapphire substrate, growing AlN-2 thin film layer, growing Si-doped n-GaN layer, growing light-emitting layer, growing p-type AlGaN layer, growing high-tempera...

Embodiment 2

[0057] Step 10: growing an AlN-1 film layer, specifically:

[0058] Put the sapphire substrate into the magnetron sputtering reaction equipment, heat the sapphire substrate to 650°C, and feed 30sccm of Ar and 120sccm of N 2 , and 1sccm of O 2 , control the sputtering bias to be reduced from 3000V to 2200V, set the target base distance to 3-4cm, and sputter an AlN-1 film layer with a thickness of 15-20nm on the surface of the sapphire substrate;

[0059] Step 20: cooling the sapphire substrate; for example, cooling for 10 minutes.

[0060] Step 30: growing an AlN-2 thin film layer, specifically:

[0061] Put the sapphire substrate with the AlN-1 thin film layer into the MOCVD reaction chamber, control the temperature to gradually increase from 850°C to 950°C, keep the reaction chamber pressure at 250mbar, and feed 80L / min H 2 , 90L / min of NH 3 , 220sccm TMAl source, and grow an AlN-2 thin film layer with a thickness of 15-20nm on the surface of the AlN-1 thin film layer.

...

Embodiment 3

[0079] A conventional LED growth method is provided below as a comparative example of the present invention.

[0080] The growth method of conventional LED epitaxy is (see the epitaxial layer structure image 3 ):

[0081] Step 1, process the sapphire substrate: put the sapphire substrate in the reaction chamber of the metal-organic chemical vapor deposition system, at 900°C-1100°C 2 Under the atmosphere, feed 50L / min-100L / min of H 2 , keep the reaction chamber pressure at 100mbar-200mbar, and process the sapphire substrate for 5min-10min.

[0082] Step 2. Growth of GaN low-temperature buffer layer: cool down to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed NH with a flow rate of 40L / min-60L / min 3 , 50sccm-100sccm TMGa and 50L / min-90L / min H 2 , growing a GaN low-temperature buffer layer with a thickness of 30nm-60nm on a sapphire substrate.

[0083] Step 3, grow 3D GaN layer: raise the temperature to 850°C-1000°C, keep the reaction chamber p...

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Abstract

The invention discloses an AlN buffer layer of an LED and an epitaxial growth method of the buffer layer. The method comprises the steps of performing growing of an AlN-1 thin film layer, cooling a sapphire substrate, and performing growing of an AlN-2 thin film layer, a Si-doped n-GaN layer, a light-emitting layer, a p-type AlGaN layer and a high-temperature p type GaN layer, and carrying out cooling, wherein the step of performing growing of the AlN-1 thin film layer comprises the steps of putting the sapphire substrate into a magnetron sputtering reaction device to be heated to 650 DEG C, and introducing Ar, N2 and O2, wherein the sputtering bias voltage is controlled to be reduced from 3000V to 2200V, and the target-substrate distance is set to be 3-4cm, and the sputtering thickness ofthe AlN-1 thin film layer is 15-20nm; and the step of performing growing of the AlN-2 thin film layer comprises the steps of putting the sapphire substrate with the AlN-1 thin film layer in an MOCVDreaction cavity, wherein the temperature is controlled to be gradually increased to 950 DEG C from 850 DEG C, the pressure of the reaction chamber is kept to be 250 mbar, and H2, NH3 and a TMAl sourceare pumped, and the AlN-2 thin film layer with the growth thickness of 15-20 nm is grown Compared with the prior art, the brightness of the LED is higher.

Description

technical field [0001] The present invention relates to the technical field of LED epitaxial design application, and more specifically, relates to an ALN ​​buffer layer of LED and an epitaxial growth method thereof. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is gradually expanding. ; The demand for LED product performance is increasing day by day in the market. How to grow better epitaxial layers has always been the focus of the LED industry. Because of the improvement of the crystal quality of the epitaxial layer, the performance of LED devices can be improved, and the lifespan and anti-aging ability of LEDs , antistatic ability, and stability will increase with the improvement of the cr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/007H01L33/12
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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