An LED chip with an ultraviolet through-hole structure of a multifunctional reflector and a preparation method thereof

A technology for LED chips and LED epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unguaranteed process accuracy, high cost of precious metal materials, and inability to align holes, saving manufacturing costs and achieving uniform current distribution. The effect of improving the performance and increasing the current distribution

Active Publication Date: 2020-04-07
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the entire UV vertical drilling structure chip process has the following defects: the mirror, the mirror protection layer, the MESA layer, and the isolation layer all need to open holes, which requires many photolithography steps and a long process cycle; On the scale of tens of microns, there is a problem of alignment between holes. If there are too many holes, there will be a problem of misalignment between holes, and the process accuracy cannot be guaranteed; the process involves evaporation or the use of a large amount of precious metal materials, which is costly.

Method used

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  • An LED chip with an ultraviolet through-hole structure of a multifunctional reflector and a preparation method thereof
  • An LED chip with an ultraviolet through-hole structure of a multifunctional reflector and a preparation method thereof
  • An LED chip with an ultraviolet through-hole structure of a multifunctional reflector and a preparation method thereof

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Effect test

Embodiment 1

[0073] A method for preparing an LED chip with an ultraviolet through-hole structure of a multifunctional reflector, comprising:

[0074] LED epitaxial wafer growth step: provide an epitaxial substrate, epitaxially grow LED epitaxial wafers on the epitaxial substrate, LED epitaxial wafers include n-type doped GaN films grown on epitaxial substrates, and n-type doped GaN films grown on n-type doped GaN films InGaN / GaN multiple quantum wells, p-type doped GaN films grown on InGaN / GaN quantum wells, epitaxial growth substrates are Si substrates, GaN substrates, sapphire substrates, LSAT substrates or LiGaO 2 A substrate, wherein the Si substrate (111) plane is an epitaxial plane;

[0075] CBL patterning processing steps: patterning the surface of the p-type doped GaN film with standard photolithography and inductively coupled plasma etching. O 2 As a reactive gas, it achieves the effect of forming a Schottky contact, which can improve the current congestion phenomenon, thereby in...

Embodiment 2

[0086] A method for preparing an LED chip with an ultraviolet through-hole structure of a multifunctional reflector, comprising:

[0087] LED epitaxial wafer growth step: provide an epitaxial substrate, epitaxially grow LED epitaxial wafers on the epitaxial substrate, LED epitaxial wafers include n-type doped GaN films grown on epitaxial substrates, and n-type doped GaN films grown on n-type doped GaN films InGaN / GaN multiple quantum wells, p-type doped GaN films grown on InGaN / GaN quantum wells, epitaxial growth substrates are Si substrates, GaN substrates, sapphire substrates, LSAT substrates or LiGaO 2 A substrate, wherein the Si substrate (111) plane is an epitaxial plane;

[0088] CBL patterning processing steps: patterning the surface of the p-type doped GaN film with standard photolithography and inductively coupled plasma etching. The power of the etched upper electrode is 900W, and the power of the lower electrode is 500W. O 2 As a reactive gas, it achieves the effe...

Embodiment 3

[0099] refer to Figure 1-12 , a method for preparing an LED chip with an ultraviolet through-hole structure of a multifunctional reflector, comprising,

[0100] LED epitaxial wafer growth step: provide an epitaxial substrate, epitaxially grow LED epitaxial wafers on the epitaxial substrate, LED epitaxial wafers include n-type doped GaN thin film 101 grown on the epitaxial substrate, grown on n-type doped GaN thin film 101 InGaN / GaN multiple quantum wells 102 on the InGaN / GaN quantum wells, p-type doped GaN film 103 grown on the InGaN / GaN quantum wells, the epitaxial growth substrate 100 is Si substrate, GaN substrate, sapphire substrate, LSAT substrate or LiGaO 2 A substrate, wherein the Si substrate (111) plane is an epitaxial plane;

[0101] CBL patterning 104 processing steps: patterning the surface of the p-type doped GaN film 103 with the standard photolithography process and inductively coupled plasma etching method, the etching power of the upper electrode is 500W, an...

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Abstract

The invention discloses a multifunctional reflector ultraviolet through hole structure LED chip, comprising an epitaxial substrate and an LED epitaxial wafer subjected to epitaxial growth on the epitaxial substrate, wherein the LED epitaxial wafer comprises an n-type doped GaN film, InGaN / GaN multiple quantum wells and a p-type doped GaN film; the n-type doped GaN film grows on the epitaxial substrate; the InGaN / GaN multiple quantum wells grow on the n-type doped GaN film; the p-type doped GaN film grows on the InGaN / GaN multiple quantum wells; the epitaxial substrate is a Si substrate, a GaNsubstrate, a sapphire substrate, a LSAT substrate or LiGaO2 substrate. The invention also provides a preparation method of the multifunctional reflector ultraviolet through hole structure LED chip. Areflector protection layer on the LED chip has excellent thermal stability, high-temperature oxidation resistance and phosphoric acid corrosion resistance, and has three functions of a reflector, a reflector protection layer and an isolation layer.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to an LED chip with an ultraviolet through-hole structure of a multifunctional reflector and a preparation method thereof. Background technique [0002] Purple LED is a new journey of LED and is considered as one of the next generation light sources. In the past six months, UV LED has become one of the new darlings of LED forums, LED laboratories, and the LED market. Driven by domestic and foreign policies and improved equipment, the market penetration rate of UV LED has greatly increased. The long-wave UV light source mainly includes medium-pressure mercury Lamps, short-arc ultra-high pressure mercury lamps, xenon lamps, UV metal halide lamps, UV LEDs, nail machines, UV resin curing, UV ink curing, money detectors, photocatalysts, etc. They are mainly used in UV curing, photochemical synthesis, printed circuit boards Exposure and fluorescent flaw detection, etc. The medium-wave u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/46H01L33/00
CPCH01L33/0075H01L33/06H01L33/32H01L33/46
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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