Super-junction device and manufacturing method thereof
A technology of superjunction device and manufacturing method, applied in semiconductor/solid state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as threshold voltage exceeding specifications
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[0072] like figure 1 As shown, it is a top view of an existing superjunction device; a general superjunction device structure includes a charge flow region, a terminal region laterally subjected to a reverse bias voltage, and a transition region between the charge flow region and the terminal region, and the terminal region around the periphery of the charge flow region, figure 1 Zone 1 represents the charge flow region, Zone 2 represents the transition region, and Zone 3 represents the terminal region.
[0073] Zone 1 includes a super junction structure composed of alternately arranged P-type pillars 22 and N-type pillars 23, figure 1 Both the P-type pillars 22 and the N-type pillars 23 are strip-shaped. The N-type pillar 23 provides a conduction path when the super-junction device is turned on, and the P-type pillar 22 and the N-type pillar 23 deplete each other and bear the reverse bias together when the super-junction device is reverse-biased.
[0074] Region 2 and Regi...
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