A kind of perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problem of no effective method for perovskite thin films, and achieve the effects of improving efficiency and stability, good repeatability, and good device stability

Active Publication Date: 2021-05-25
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still no effective way to obtain a highly stable perovskite film while obtaining a dense crystal.

Method used

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  • A kind of perovskite solar cell and preparation method thereof
  • A kind of perovskite solar cell and preparation method thereof
  • A kind of perovskite solar cell and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0031] See attached figure 1 , which is a schematic structural view of the perovskite solar cell prepared in this example. In the present invention, at room temperature, on the cathode of the substrate 1, an oven is used to pass TiCl at 70°C 4 Preparation of TiO by Hydrothermal Method 2 The thin film was annealed at 200°C for 30 minutes to prepare the electron transport layer 2; the perovskite precursor solution was spin-coated on the prepared electron transport layer 2; Perovskite crystallization is induced, followed by annealing at 100° C. for 20 minutes to obtain a perovskite light-absorbing layer 3 of about 300-450 nanometers. A hole transport layer 4 with a thickness of 180 nm is prepared on the perovskite light absorbing layer 3 . Transfer the sample to a thermal evaporation system to evaporate a metal anode 5 to prepare a perovskite solar cell. Specific steps are as follows:

[0032] Step 1, cleaning the cathode 1 composed of the glass substrate and the transparent...

Embodiment 2

[0043] Step 1, cleaning the cathode composed of the glass substrate and the transparent electrode with acetone, detergent, isopropanol and acetone respectively. After 20 minutes of ultraviolet ozone on the substrate, on the cathode substrate, pass TiCl at 70°C in an oven 4 Preparation of TiO by Hydrothermal Method 2 The thin film was annealed at 200°C for 30 minutes to prepare the electron transport layer.

[0044] Step 2, apply ultraviolet ozone to the substrate for 10 minutes, and prepare a perovskite light-absorbing layer on the electron transport layer by spin coating; specifically, mix lead iodide and methylamino iodide in a molar ratio of 1:1, and use DMSO (dimethyl sulfoxide) and GBL (γ-butyrolactone) were mixed and dissolved to obtain a perovskite precursor solution of 1.2 mol / L to 2 mol / L, and the spin coating precursor solution was rotated for 20s to 30s, then drip Add a chlorobenzene solution with a concentration of 0.4mg / mL F-N2200 to induce crystallization, or d...

Embodiment 3

[0051] Step 1, cleaning the cathode composed of the glass substrate and the transparent electrode with acetone, detergent, isopropanol and acetone respectively. After 20 minutes of ultraviolet ozone on the substrate, on the cathode substrate, pass TiCl at 70°C in an oven 4 Preparation of TiO by Hydrothermal Method 2 The thin film was annealed at 200°C for 30 minutes to prepare the electron transport layer.

[0052] Step 2, apply ultraviolet ozone to the substrate for 10 minutes, and prepare a perovskite light-absorbing layer on the electron transport layer by spin coating; specifically, mix lead iodide and methylamino iodide in a molar ratio of 1:1, and use DMSO (dimethyl sulfoxide) and GBL (γ-butyrolactone) were mixed and dissolved to obtain a perovskite precursor solution of 1.2 mol / L to 2 mol / L. A chlorobenzene solution with a concentration of 0.4 mg / mL ITIC induces crystallization. After the solvent is further volatilized, it is annealed at 100 °C for 10 minutes to obtai...

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Abstract

The invention discloses a perovskite solar cell and a preparation method thereof. Preparation of TiO on cathode substrate by hydrothermal method 2 Electron transport layer, prepare a perovskite light-absorbing layer on the electron transport layer, and drop a dilute solution containing N-type conjugated materials during the spin-coating process of the perovskite layer, and then sequentially prepare on the perovskite light-absorbing layer for transmission A hole-transporting layer for holes and an anode for collecting holes, resulting in a perovskite solar cell. The invention adopts a low-temperature method to prepare the perovskite active layer. By adding an N-type conjugated material between the perovskite active layer and the hole transport layer, the surface defect state at the interface can be effectively reduced, the carrier lifetime can be improved and the carrier lifetime can be reduced. The working environment of the device can damage the active layer, so as to achieve the purpose of improving the efficiency and stability of the solar cell device. The method for preparing a perovskite active layer at a low temperature provided by the invention has the characteristics of simplicity, convenience and good film uniformity, and can realize large-scale production.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing a perovskite solar cell and an active layer thereof at low temperature. Background technique [0002] Perovskite solar cells have attracted much attention in the past few years due to their excellent light absorption ability, low exciton binding energy and long carrier diffusion length. quickly climbed to 22.1%. In addition, perovskite solar cells have the characteristics of relatively simple cell structure, simple solution method preparation process, and low cost, and have gradually become a very competitive solar cell. [0003] Perovskite solar cells generally adopt a sandwich structure, and the perovskite light-absorbing layer is placed between the electron-transporting layer and the hole-transporting layer. Among them, small molecules or polymers are often used as hole transport materials for batteries, and metal oxides are often used as electron ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/00Y02E10/549Y02P70/50
Inventor 马万里李方超袁建宇凌旭峰
Owner SUZHOU UNIV
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