Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inorganic photoresist composition patterning method

A photoresist and composition technology, applied in the field of microelectronics, can solve problems such as lack of light sensitivity and limited application

Active Publication Date: 2018-05-29
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although HSQ is widely used in the field of microelectronics technology due to its many advantages, it is only sensitive to light sources with wavelengths below 157 nanometers and can be patterned, but it does not respond to light in the ultraviolet-visible-near-infrared band. This greatly limits its application
The optical responsivity of HSQ is determined by the intrinsic absorption characteristics of its molecules. Vacuum spectroscopy shows that the absorption edge of HSQ is cut off near 250 nanometers, and light with longer wavelengths cannot be absorbed by HSQ, resulting in its sensitivity to ultraviolet, visible and near Infrared light is not photosensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inorganic photoresist composition patterning method
  • Inorganic photoresist composition patterning method
  • Inorganic photoresist composition patterning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A method for patterning an inorganic photoresist composition, comprising the steps of:

[0052] A) Add an appropriate amount of inorganic photoresist HSQ dropwise on the glass substrate, and spin-coat at 500 rpm for 5 seconds and 4000 rpm for 60 seconds to obtain a photoresist film.

[0053] B) Bake the obtained photoresist film on a hot plate at 50° C. for 10 minutes, then raise the temperature to 100° C. and bake for 3 minutes to obtain a transparent photoresist film.

[0054] C) Utilize 780nm femtosecond laser to carry out laser direct writing exposure to this photoresist film, the line structure formed is as follows figure 1 As shown, the photoresist film after exposure was developed for 60 seconds using 0.26mol / L tetramethylammonium hydroxide (TMAH) aqueous solution, washed with deionized water and dried to obtain a photoresist pattern, from figure 1 It can be seen from the photoresist pattern shown that the photoresist pattern of the present invention has a thinn...

Embodiment 2

[0056] A method for patterning an inorganic photoresist composition, comprising the steps of:

[0057] A) Add an appropriate amount of inorganic photoresist HSQ dropwise on the silicon substrate, and spin coat at 500 rpm for 5 seconds and 4000 rpm for 60 seconds to obtain a photoresist film.

[0058] B) Bake the obtained photoresist film on a hot plate at 50° C. for 10 minutes, then raise the temperature to 100° C. and bake for 3 minutes to obtain a transparent photoresist film.

[0059] C) Utilize 780nm femtosecond laser to carry out laser direct writing exposure to this photoresist film, the line structure formed is as follows figure 2 As shown, the photoresist film after exposure was developed for 60 seconds using 0.26mol / L tetramethylammonium hydroxide (TMAH) aqueous solution, washed with deionized water and dried to obtain a photoresist pattern, from figure 2 From the photoresist pattern shown, it can be seen that the thinnest width of the photoresist pattern of the pr...

Embodiment 3

[0061] A preparation of an inorganic photoresist composition and patterning thereof, comprising the steps of:

[0062] 1) Add 0.2 mL of methyl isobutyl ketone dissolved with 15 mg of photoacid generator diphenyliodonium hexafluorophosphate into 1 mL of HSQ, and the system is protected from light to obtain a photoresist solution.

[0063] 2) The photoresist solution was filtered three times with a filter membrane with a pore size of 0.22 μm to remove impurities, and a photoresist composition P was obtained.

[0064] The prepared photoresist composition P is used for photoresist patterning, comprising the steps of:

[0065] A) Dropping an appropriate amount of photoresist composition P on the glass substrate, spin-coating at 500 rpm for 5 seconds and 4000 rpm for 60 seconds to obtain a photoresist film with good film-forming properties.

[0066] B) Bake the obtained photoresist film on a hot plate at 50° C. for 10 minutes, then raise the temperature to 100° C. and bake for 3 mi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an inorganic photoresist composition patterning method. A light source is adopted for performing patterning on a photoresist composition, wherein the light source is an ultraviolet light-visible-near infrared light source with wavelength of 250-2,500nm; and the inorganic photoresist composition is hydrogen silsesquioxane. When the inorganic photoresist composition is in exposure, crosslinking of HSQ is caused by the nonlinear interaction between light and the material; the crosslinked hydrogen silsesquioxane HSQ is not dissolved in a developing liquid, while HSQ whichis not crosslinked is dissolved in the developing liquid, so as to form specific a photoresist pattern; and the method for inorganic photoresist HSQ pattering by adopting ultraviolet light, visible and near infrared exposure can be applied to the technical field of microelectronics.

Description

technical field [0001] The invention relates to the technical field of microelectronics. More specifically, it relates to a method for patterning an inorganic photoresist composition. Background technique [0002] Photoresist, also known as photoresist, is a kind of photosensitive substance, and the pre-designed fine structure can be obtained by using the difference in solubility in the developer before and after exposure. The processing of micro-nano structures using photoresist is a crucial link in the manufacture of semiconductor devices such as VLSI. The traditional high-resolution electron beam photoresist polymethyl methacrylate is a positive photoresist with high resolution. Although the resolution is high, the sensitivity is low, and the glue is easy to flow at high temperature. [0003] HSQ is an inorganic photoresist developed by Dow Corning, and its main component is hydrogen silsesquioxane. After HSQ is exposed to light sources such as electron beams, extreme ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G03F7/20
CPCG03F7/0755G03F7/2004
Inventor 段宣明金峰郑美玲董贤子
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com