Method for preparing silicon carbide nanometer crystal whiskers from crystalline silicon cutting waste mortar

Abstract

The invention discloses a method for preparing silicon carbide nanometer crystal whiskers from crystalline silicon cutting waste mortar. The method comprises: mixing crystalline silicon cutting wastemortar with an organic solvent and performing stirring, and performing filtration to obtain a solid waste material; drying the solid waste material and performing grinding to obtain raw material powder; cleaning plant fibers through an ultrasonic method and drying the obtained plant fibers; and putting raw material powder and treated plant fibers in a discharge plasma system, controlling the temperature at 1100-1600 DEG C, controlling the pressure of inert gas to be 100-800 Pa, and carrying out a reaction for 10-40 min to obtain silicon carbide nanometer crystal whiskers and silicon carbide abrasive. A complex technical process of extracting silicon and silicon carbide separately in a conventional crystalline silicon cutting waste mortar cycling method is simplified, and crystalline silicon cutting waste mortar can be directly made into silicon carbide nanometer crystal whiskers. According to the method, silicon carbide nanometer crystal whiskers and silicon carbide abrasive can be obtained at the same time.

Description

technical field [0001] The invention relates to silicon carbide nano-whiskers, in particular to a method for preparing silicon carbide nano-whiskers from crystalline silicon cutting waste mortar, and belongs to the technical field of inorganic ceramic materials. Background technique [0002] In the past two decades, the photovoltaic industry has developed rapidly. According to industry statistics, China's silicon wafer production capacity has ranked first in the world since 2008. In 2010, the total domestic silicon wafer production capacity was nearly 14GW, accounting for more than 50% of the global total production capacity. Although solar cells are non-polluting, a large amount of solid and liquid waste is generated during the process of cutting silicon ingots into silicon wafers by multi-wire cutting. Wire cutting is currently the main method of silicon wafer cutting in the world, and its process depends on the combined use of crystal silicon cutting fluid (also known as...

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Problems solved by technology

Traditional silicon carbide whiskers are mainly prepared by carbothermal reduction method, electrospinning method, reaction method of silicon-containing compound and carbon nanotube, direct reaction method of silicon carbon, sublimation recrystallization method of silicon carbide, chemical vapor deposition method, organic silicon compound Thermal decomposition method, silicon and hydrocarbon reaction method, etc., these methods have their own characteristics, but all have defects such as complicated process, low preparation efficiency, and high cost.

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