A neural electrode based on porous silicon and polymer, its manufacturing process and application

A porous silicon and polymer technology, applied in the field of neural electrodes, can solve problems such as brain tissue damage, and achieve the effects of low power consumption, low cost and small size

Active Publication Date: 2019-09-06
薛宁
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the problems of long-term stability, biocompatibility, and damage to brain tissue in the existing nerve electrodes, the object of the present invention is to provide a nerve electrode based on porous silicon and polymers and its manufacturing process. The porous silicon is biocompatible. After it is degraded in the brain tissue, the remaining polymer-metal-polymer functional layer has a mechanical strength similar to that of the brain tissue, and will not damage the brain tissue due to the tiny movement of the device. thus making the device suitable for long-term monitoring of cranial nerve signals

Method used

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  • A neural electrode based on porous silicon and polymer, its manufacturing process and application
  • A neural electrode based on porous silicon and polymer, its manufacturing process and application
  • A neural electrode based on porous silicon and polymer, its manufacturing process and application

Examples

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Embodiment 1

[0043] This embodiment is a manufacturing method of a neural electrode device based on a porous silicon substrate:

[0044] 1. Production of porous silicon:

[0045] The manufacturing process of porous silicon is simple, and the preparation methods can be anode electrochemical corrosion method, hydrothermal corrosion method, and spark discharge method. Among them, the anodic electrochemical corrosion method is the most common and compatible with the MEMS process. In this method, platinum or graphite is used as an anode, and a patterned silicon wafer is used as a cathode to carry out electrocorrosion in HF solution. Or platinum or graphite is used as the anode and cathode, and the silicon wafer is suspended between the two plates. In the mixed solution of HF and ethanol, the electrochemical corrosion is realized under the action of the electric field. The corrosion rate and the aperture size of porous silicon are related to the doping concentration of single crystal silicon w...

Embodiment 2

[0053] The difference with Example 1 is: image 3 (a) and image 3 (b) can be omitted, and directly deposit isolation materials such as silicon nitride or polysilicon, and then perform patterning to open windows. The next step of porous silicon formation will enter the silicon substrate through the patterned window. However, it is isotropic corrosion at this time. etched porous silicon such as Figure 5 shown.

[0054] Subsequent methods and image 3 (f) and image 3 (g) Similarly, the next deep trench etch to define the device boundary will involve the etching of porous silicon. Since the dry etching rate of porous silicon depends on the porosity and the degree of oxidation of porous silicon, the etching conditions need to be strictly controlled. Finally, perform mechanical grinding on the back of the silicon wafer to reach the required device thickness.

Embodiment 3

[0056] Firstly, the functional layer of flexible polymer and metal is fabricated on the silicon substrate (same as image 3 (f)-(g)). The device and other areas are then protected with silicon nitride or silicon oxide or some other passivation layer. Open deep etch trenches (such as image 3 (h)). The final step is electrochemical etching of silicon to produce porous silicon. Since the formation of porous silicon is isotropic, the silicon below the polymer functional layer will eventually be corroded to form a porous silicon layer. Finally, perform mechanical grinding on the back of the silicon wafer to reach the required device thickness.

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Abstract

The invention belongs to the technical field of electrical sensors, and discloses a neural electrode based on porous silicon and polymers, a manufacturing process of the neural electrode, and an application of the neural electrode. The neural electrode comprises a substrate layer, and a structural layer on the substrate layer, wherein the structural layer adopts a sandwich structure in which flexible polymers, an electrode material layer and flexible polymers are arranged in sequence; the substrate layer comprises a porous silicon substrate and a silicon substrate; electrode contacts I and electrode contacts II are arranged on the upper surface of the structural layer; the electrode contacts I are used as brain signal recording contacts; and the electrode contacts II are connected with a brain external neural signal acquisition device after being bonded with external lead wires. The neural electrode is used for monitoring brain neural signals; after a porous silicon part is inserted into the brain tissues, the porous silicon can generate a soluble substance in an alkalescent environment of the brain tissues; and the neural electrode has the characteristics of small size, multiple channels, low power consumption, low cost, high performance stability, etc.

Description

technical field [0001] The invention relates to the technical field of electrical sensors, in particular to a nerve electrode based on porous silicon and polymer, its manufacturing process and application. Background technique [0002] Tens of millions of people worldwide have lost some or all of their motor functions due to neurological and muscular diseases. Stroke, spinal cord injury, traumatic brain injury, and multiple sclerosis are the main causes of neurological motor dysfunction. More than five million people in China and the United States are paralyzed by such diseases, causing serious physical and economic burdens to patients, families and society. For example, in the United States, the direct treatment costs caused by spinal injuries are as high as 40 billion US dollars. A more potential treatment method for neurological motor dysfunction is to control and obtain the neural signals of the brain, and then control the prosthesis or limbs at the outer end to artifi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B1/00B81C1/00A61B5/04
CPCA61B5/24B81B1/004B81B2201/06B81C1/00539
Inventor 薛宁薛德林
Owner 薛宁
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