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Mono-disperse gallium oxide powder and method for preparing high-density ceramic targets from mono-disperse gallium oxide powder

A ceramic target, gallium oxide technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of increased risk, long production cycle, increased economic cost, etc., and achieves convenient operation, The effect of high yield and simple process

Active Publication Date: 2017-08-04
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Some preparation methods of gallium oxide powder are disclosed in the prior art, such as patent CN102978649A discloses the use of electrolysis to prepare gallium oxide powder, CN104276597A discloses the use of oxidation molten metal method to prepare gallium oxide powder, wherein the electrolysis method is used to prepare powder electrolysis The time is more than 30 hours, the production cycle is long, and the economic cost is increased, while the oxidation molten metal method uses high-pressure gas as raw material, which increases the risk of production

Method used

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  • Mono-disperse gallium oxide powder and method for preparing high-density ceramic targets from mono-disperse gallium oxide powder
  • Mono-disperse gallium oxide powder and method for preparing high-density ceramic targets from mono-disperse gallium oxide powder
  • Mono-disperse gallium oxide powder and method for preparing high-density ceramic targets from mono-disperse gallium oxide powder

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Effect test

Embodiment 1

[0036] Gallium metal with a purity of 99.999% was used as a raw material, and 13.95 g (0.2 mol) of gallium metal was weighed. Use 65% concentrated nitric acid to dissolve gallium in a water bath at 50° C. After the gallium is completely dissolved, dilute the solution with deionized water to a 0.1 mol / L gallium nitrate solution. The above solution was placed in a water bath, and under mechanical stirring, a 10-fold diluted ammonia solution (25%) was added dropwise with a peristaltic pump, and the reaction temperature was controlled at 20°C. When the pH value of the reaction solution was 9, the dropwise addition of aqueous ammonia was stopped. Continue to stir the reaction solution and age it for more than 3 hours. During this process, ammonia water is added to keep the pH value stable at 9±0.2. The obtained precipitate was washed three times with deionized water, filtered and dried at 100° C. for 12 h. The obtained dry powder was calcined at 800° C. for 3 h to obtain gallium ...

Embodiment 2

[0038] Gallium metal with a purity of 99.999% was used as a raw material, and 13.95 g (0.2 mol) of gallium metal was weighed. Use 65% concentrated nitric acid to dissolve gallium in a water bath at 50° C. After the gallium is completely dissolved, dilute the solution with deionized water to a 0.2 mol / L gallium nitrate solution. The above solution was placed in a water bath, and under mechanical stirring, a 10-fold diluted ammonia solution (25%) was added dropwise with a peristaltic pump, and the reaction temperature was controlled at 30°C. When the pH value of the reaction solution was 8, the dropwise addition of aqueous ammonia was stopped. Continue to stir the reaction solution and age it for more than 3 hours. During this process, ammonia water is added to keep the pH value stable at 8±0.2. The obtained precipitate was washed three times with deionized water, filtered and dried at 100° C. for 12 h. The obtained dry powder was calcined at 900° C. for 1 h to obtain gallium ...

Embodiment 3

[0040] Gallium metal with a purity of 99.999% was used as a raw material, and 13.95 g (0.2 mol) of gallium metal was weighed. Use 65% concentrated nitric acid to dissolve gallium in a water bath at 50° C. After the gallium is completely dissolved, dilute the solution with deionized water to a 0.2 mol / L gallium nitrate solution. The above solution was placed in a water bath, and under mechanical stirring, a 10-fold diluted ammonia solution (25%) was added dropwise with a peristaltic pump, and the reaction temperature was controlled at 80°C. When the pH value of the reaction solution was 8, the dropwise addition of aqueous ammonia was stopped. Continue to stir the reaction solution and age it for more than 3 hours. During this process, ammonia water is added to keep the pH value stable at 8±0.2. The obtained precipitate was washed three times with deionized water, filtered and dried at 60° C. for 24 h. The obtained dry powder was calcined at 900° C. for 2 h to obtain gallium o...

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Abstract

The invention discloses mono-disperse gallium oxide powder and a method for preparing high-density ceramic targets from the mono-disperse gallium oxide powder. The method includes dissolving metal gallium materials with the purity higher than 99.99% in acid and preparing clear gallium salt solution; adding precipitants into the clear gallium salt solution to generate precipitates; washing, filtering, drying and calcining the obtained precipitates to obtain the mono-disperse ultrafine gallium oxide powder; carrying out compression molding and cold isostatic pressing strengthening on the synthesized mono-disperse gallium oxide powder to obtain gallium oxide green bodies; sintering the green bodies in high-temperature furnaces to obtain the high-density gallium oxide ceramic targets with uniform microscopic structures. The mono-disperse gallium oxide powder and the method have the advantages of simple process, convenience in operation, high yield, applicability to industrial production and the like.

Description

technical field [0001] The invention belongs to the field of preparation of gallium oxide powder and gallium oxide ceramic target material, and more specifically relates to a preparation method of monodisperse gallium oxide powder and its high-density ceramic target material. Background technique [0002] Gallium oxide is a wide bandgap transparent oxide semiconductor material with a room temperature bandgap as high as 4.9eV and excellent chemical, physical and thermal stability. Because it is sensitive to oxygen and solar-blind ultraviolet rays, it is currently the best single-phase material for the preparation of high-temperature gas sensors and solar-blind ultraviolet detectors. In the current flat panel display (FPD) market, thin film transistor (TFT) displays occupy an absolute dominant position, with an annual global output value of hundreds of billions of dollars. Among them, IGZO (Indium Gallium Zinc Oxide, indium gallium zinc oxide), because of its advantages of lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C04B35/01
CPCC01G15/00C01P2002/72C01P2004/03C01P2004/51C04B35/01C04B2235/5463C04B2235/602C04B2235/656C04B2235/6567C04B2235/6583
Inventor 李晨辉单静静刘江安史玉升吴甲民闫春泽桂如峰
Owner HUAZHONG UNIV OF SCI & TECH
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