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A kind of manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal and preparation method thereof

A lead titanate piezoelectric, bismuth titanate technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of difficult preparation, dielectric loss and large leakage current, and achieve single crystal Uniform composition, reduced leakage current and dielectric loss, and improved piezoelectric performance

Active Publication Date: 2019-03-19
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention aims to overcome the defects of the existing bismuth magnesium titanate-lead titanate piezoelectric single crystal dielectric loss and large leakage current and difficult preparation, and provides a manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal Single crystal and its preparation method

Method used

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  • A kind of manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal and preparation method thereof
  • A kind of manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal and preparation method thereof
  • A kind of manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal and preparation method thereof

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Effect test

Embodiment 1

[0032] The initial raw material Pb 3 o 4 , MgO, TiO 2 、 Bi 2 o 3 , MnO 2 According to the chemical formula 0.76Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.24PbTiO 3 +0.1mol%MnO 2The metering ratio weighs, mixes and grinds. The uniformly mixed raw materials were put into a platinum crucible, and the platinum crucible was placed in a muffle furnace and pre-fired at a temperature of 850°C for 4 hours to obtain a pre-fired powder. The calcined powder is subjected to secondary grinding. Then take by weighing the calcined powder quality after secondary grinding and be 30% Pb 3 o 4 、 Bi 2 o 3 and B 2 o 3 (Pb 3 o 4 : Bi 2 o 3 =7:3) as a flux, mixed evenly with the calcined powder after secondary grinding, then put the mixed powder into a platinum crucible, and place the platinum crucible in the muffle furnace, and the The temperature rises from room temperature to 1180°C over 7 hours, and keeps the temperature constant for 10 hours to fully melt the raw materials, then the temperatu...

Embodiment 2

[0039] The initial raw material Pb 3 o 4 , MgO, TiO 2 、 Bi 2 o 3 , MnO 2 According to the chemical formula 0.76Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.24PbTiO 3 +0.1mol%MnO 2 The metering ratio weighs, and then weighs the Pb that accounts for 30% of the raw material mass 3 o 4 、 Bi 2 o 3 and B 2 o 3 (Pb 3 o 4 : Bi 2 o 3 =7:3) as a flux, mixed and ground evenly. Then put the mixed powder into the platinum crucible, and place the platinum crucible in the muffle furnace. The temperature in the muffle furnace rises from room temperature to 1180°C over 7 hours, and keeps the temperature constant for 10 hours to fully melt the raw materials, and then muffle The temperature in the furnace drops to 1000°C at a rate of 2°C / h, then to 800°C at a rate of 5°C / h, then to 700°C at a rate of 20°C / h, and then to 60°C / h. to 200°C, and finally cooled to room temperature naturally with the furnace. At room temperature, the manganese-doped bismuth titanate-lead titanate piezoelectric single...

Embodiment 3

[0042] The initial raw material Pb 3 o 4 , MgO, TiO 2 、 Bi 2 o 3 , MnO 2 According to the chemical formula 0.76Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.24PbTiO 3 +0.5mol%MnO 2 The metering ratio weighs, mixes and grinds. The uniformly mixed raw materials were put into a platinum crucible, and the platinum crucible was placed in a muffle furnace and pre-fired at a temperature of 850°C for 4 hours to obtain a pre-fired powder. The calcined powder is subjected to secondary grinding. Then take by weighing the calcined powder quality after secondary grinding and be 30% Pb 3 o 4 、 Bi 2 o 3 As a flux (Pb 3 o 4 : Bi 2 o 3 =7:3), mixed evenly with the calcined powder after the secondary grinding, then put the mixed powder into the platinum crucible, and put the platinum crucible in the muffle furnace, the temperature in the muffle furnace was changed from room temperature to After 7 hours, it was raised to 1180°C, and the temperature was kept constant for 10 hours to fully melt the ...

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Abstract

The invention relates to a manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal and a preparation method thereof. The manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal has an ABO3 type composite perovskite structure, and the chemical composition of the manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal is (1-x)Bi (Mgi / 2Ti1 / 2)O3-xPbTiO3+ alpha MnO2, wherein in the formula, x is greater than or equal to 0.14 and smaller than or equal to 0.42, x stands for the molar ratio of a PbTiO3 component, manganese ions are used as doped ions and replace a bit B, and the doping concentration alpha of the manganese ions is greater than or equal to 0.1 mol% and smaller than or equal to 5 mol%. A cosolvent method is adopted, and pre-burning treatment is carried out before melting. Compared with a method which does not have a pre-burning treatment step before melting, the method has the characteristics that ingredients of the prepared single crystal are more uniform, the single crystal is modified by doping MnO2 in the single crystal, leak current and dielectric loss of the system are reduced, polarization is full, the piezoelectric property is improved, and utilization potentiality at high temperature is huge.

Description

technical field [0001] The invention relates to the technical field of piezoelectric single crystal materials, in particular to a method for preparing a manganese-doped bismuth magnesium titanate-lead titanate piezoelectric single crystal. Background technique [0002] Piezoelectric materials refer to multifunctional materials that can produce piezoelectric effects and inverse piezoelectric effects, mainly including piezoelectric single crystals, piezoelectric ceramics (polycrystalline), piezoelectric polymers, piezoelectric films, and in recent years gradually Emerging piezoelectric composite materials, etc. The so-called positive piezoelectric effect refers to such an effect: when the piezoelectric material is subjected to mechanical stress, it will cause electrical polarization, and its polarization value is proportional to the mechanical stress, and its sign depends on the direction of the stress. This phenomenon is called Positive piezoelectric effect; otherwise, it is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B9/12
CPCC30B9/12C30B29/32
Inventor 田彦锋许桂生刘锦峰朱秀
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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