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Non-insulating dual-tower type diode module

A diode module, double-tower technology, applied in the manufacture of printed circuits, assembling printed circuits and circuits with electrical components, etc., can solve the problems of unfavorable module stability, increased module conduction loss, increased module thermal resistance, etc., to reduce The effect of thermal resistance, reduction of on-state voltage drop, and resistance value reduction

Inactive Publication Date: 2017-05-31
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current common non-insulated double-tower diode module usually consists of a bottom plate 1', an upper transition layer 2', a diode chip 3', a lower transition layer 4', a connecting bridge plate 5', a main terminal 6', an insulator 7', and a soft elastic glue 8. ' and the shell 9'; specifically, the lower end surface of the diode chip 3' is fixedly connected to one side of the connecting bridge plate 5' through the upper plating layer 2'; the connecting bridge plate 5' is a strip with more than two bends; The other side of the connecting bridge plate 5' is fixed on the bottom plate 1' through the insulator 7', and the shell 9' with a positioning groove 91' on the top is fixed on the bottom plate 1'; the main terminal 6' is a strip with two or more folded edges Board, the inner side of the main terminal 6' is fixedly connected to the connecting bridge plate 5', the other side of the main terminal 6' passes through the shell 9' and covers the top of the shell 9', and covers the main terminal 6' on the top of the shell 9' The via hole 61' is provided on the top and corresponds to the positioning groove 91' on the shell shell, the lower transition layer 4', the diode chip 3', the upper overcoating layer 2', the outer periphery of the connecting bridge plate 5', the insulator 7' and One side of the main terminal 6' is filled with soft elastic glue 8' for sealing; wherein, the upper overcoating layer 2' and the lower overplating layer 4' connected to the diode chip 3' are molybdenum sheets or kovar sheets, the purpose of which is to relieve the bridge caused by soldering. The stress brought by the board 5', and due to the existence of the upper overplating layer 2' and the lower overplating layer 4', two layers of solder layers and two layers of metal layers are added above and below the chip, which will cause an increase in the conduction loss of the module. At the same time, it causes an increase in the thermal resistance of the module, which is not conducive to the stability of the module; in addition, due to the introduction of a metal layer that is in direct contact with the chip during the operation of the module, there is a hidden danger of stress, which may be caused by thermal expansion of the chip in an environment with relatively harsh temperature changes. Structural damage; these are not expected by those skilled in the art

Method used

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Examples

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0024] Such as figure 2 As shown, this embodiment relates to a non-insulated double-tower diode module, specifically, the non-insulated double-tower diode module includes a base plate 1, a diode chip 7, a ceramic copper-clad laminate 3, a connecting wire 9, a main terminal 5 and a housing 2; wherein, the back side of the diode chip 7 is fixed on the base plate 1 by means of high-temperature welding through solder, and the surface metal on the front side of the diode chip 7 is electrically connected to the copper layer of the ceramic copper-clad laminate 3 through the connecting wire 9; one end of the main terminal 5 Solder is used to fix the copper layer on the top of the ceramic copper clad laminate 3 by welding, and the other end passes through the hole of the shell 2 and covers the top surfa...

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Abstract

The invention relates to the technical field of integrated circuit manufacturing, particularly to a non-insulating dual-tower type diode module. A diode chip is directly welded on a bottom plate, and the diode chip is connected with a main terminal through aluminum wires and a ceramic copper-clad plate; the mechanical stress and internal resistance of the diode chip are lowered in installation and operating processes, and the operating reliability of the diode is improved; and meanwhile, by adoption of the main terminal with a specific bending shape, when the main terminal on the module suffers from stress, external stress can be buffered by the bending shape on the main terminal, so that the internal structure of the module can be further protected.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a non-insulated double-tower diode module applied to inverter welding machines and various switching power supplies. Background technique [0002] Non-insulated double-tower diode module is a module product with standard positioning size. Due to its simple appearance and convenient use, it is widely used in inverter welding machines and various switching power supplies. [0003] The current common non-insulated double-tower diode module usually consists of a bottom plate 1', an upper transition layer 2', a diode chip 3', a lower transition layer 4', a connecting bridge plate 5', a main terminal 6', an insulator 7', and a soft elastic glue 8. ' and the shell 9'; specifically, the lower end surface of the diode chip 3' is fixedly connected to one side of the connecting bridge plate 5' through the upper plating layer 2'; the connecting bridge plate 5' is a s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L21/60H01L23/367H05K3/34H05K1/11
CPCH01L24/49H01L24/85H05K1/11H05K3/34H05K3/3426H01L23/367H01L23/48H01L2224/491H01L2224/858
Inventor 车湖深于今李彦莹
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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