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High-conductivity graphene/copper-based layered composite material and preparation method thereof

A composite material and graphene technology, applied in the direction of metal layered products, chemical instruments and methods, metal material coating technology, etc., can solve the problems that are not conducive to graphene's high electron mobility, increased carrier scattering, and low conductivity And other problems, to achieve the effect of high utilization efficiency, overcome the reduction of resistance, and easy production

Inactive Publication Date: 2017-04-26
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The CVD technique used in this composite material introduces graphene with a relatively low defect density, making the electrical conductivity of the composite material (99.1% IACS) significantly higher than that of the rGO / Cu composite material (50% IACS) in literature (3). Increased, but still not exceeding the level of the international annealed soft copper standard
Through analysis, it is found that (1) the copper substrate is polycrystalline, and a large number of grain boundaries increase the scattering of carriers, thereby increasing the resistance; (2) because graphene has two-dimensional atomic layer structure characteristics and various properties. Anisotropy, and the powder sintering technology leads to non-oriented dispersion of graphene inside the composite material, which is not conducive to the intrinsic characteristics of graphene two-dimensional high conductivity and high electron mobility, resulting in the conductivity of CVD graphene-copper composite materials Below the international annealed copper standard

Method used

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  • High-conductivity graphene/copper-based layered composite material and preparation method thereof
  • High-conductivity graphene/copper-based layered composite material and preparation method thereof
  • High-conductivity graphene/copper-based layered composite material and preparation method thereof

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Experimental program
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Embodiment 1

[0034] First, graphene with a thickness of a single layer and a coverage of ≥95% is grown on the surface of a 500 μm thick copper substrate by chemical vapor deposition, and the carbon source is methane gas to obtain a sandwich-shaped graphene-coated copper substrate. The particle size is ≥300 μm; then two graphene-coated copper substrates are vacuum hot-pressed and sintered to obtain a highly conductive graphene / copper-based laminated composite material. The conductivity of the obtained layered composite is (66.2×10 6 S / m, 114%IACS), higher than pure silver, meeting the requirements for use.

Embodiment 2

[0036] First, graphene with a thickness of a single layer and a coverage of ≥95% is grown on the surface of a 100 μm thick copper substrate by chemical vapor deposition, and the carbon source is acetylene gas to obtain a sandwich-shaped graphene-coated copper substrate with in-plane grains. The particle size is ≥300 μm; and then 5 graphene-coated copper substrates are hot-pressed and sintered under the protection of an argon atmosphere to obtain a highly conductive graphene / copper-based laminated composite material. The conductivity of the obtained layered composite is (67.2×10 6 S / m, 116%IACS), higher than pure silver, meeting the requirements for use.

Embodiment 3

[0038] First, graphene with a thickness of a single layer and a coverage ≥ 95% is grown on the surface of a 40 μm thick copper substrate by chemical vapor deposition, and the carbon source is methane gas to obtain a sandwich-shaped graphene-coated copper substrate with in-plane grains The particle size is ≥300 μm; then 10 graphene-coated substrates are subjected to spark plasma sintering to obtain a highly conductive graphene / copper-based composite material. The conductivity of the obtained layered composite is (66.9×10 6 S / m, 115%IACS), higher than pure silver, meeting the requirements for use.

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Abstract

The invention discloses a high-conductivity graphene / copper-based layered composite material and a preparation method thereof. The composite material is characterized in that the composite material is of a layered structure formed by alternate combination of chemical vapor deposition (CVD) graphene and a copper substrate, the copper substrate is in a single-crystal state in the thickness direction in layers, and the (111) crystal face high-orientation effect is achieved. The method includes the following steps that (1) graphene is grown on the upper surface and the lower surface of the platy copper substrate through a CVD technology and the copper substrate is induced to achieve preferred orientation along a (111) crystal face, and the sandwich-shaped graphene-cladding copper substrate is obtained through preparation; and (2) multiple pieces of graphene-cladding copper substrates are subjected to hot pressed sintering densification to form the high-conductivity graphene / copper-based layered composite material. The layered composite material prepared by the method is high in conductivity, higher than pure silver in conduction level and easy to produce and can be used as various conduction materials.

Description

technical field [0001] The invention belongs to the field of high-conductivity metal-based composite materials, and specifically relates to a high-conductivity graphene / copper-based composite material and a preparation method thereof. Background technique [0002] In recent years, with the development of electronics and conduction technology, electrode materials, signal fidelity and other fields have proposed higher conduction performance of conductors than pure silver (≥62.9×10 6 S / m, 108% IACS) requirements (IACS is the international annealed copper standard). The document retrieval of prior art finds, document (1) " Copper Better than Silver: Electrical Resistivity of the Grain-Free Single-Crystal Copper Wire " (copper is better than silver: the resistivity of single-crystal copper wire) (Crystal Growth & Design, Vol .10, No.6, 2010, 2780-2784) prepared copper single crystal by spin pulling method, and then obtained single crystal copper wire by electric spark wire cutti...

Claims

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Application Information

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IPC IPC(8): B32B15/01B32B15/20B32B7/08B32B33/00B32B37/06B32B37/10C23C16/26
CPCB32B15/01B32B7/08B32B15/20B32B33/00B32B37/06B32B37/10B32B2307/202C23C16/26
Inventor 熊定邦曹沐谭占秋范根莲李志强张荻
Owner SHANGHAI JIAO TONG UNIV
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