Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and preparation method thereof

A technology of perovskite structure and dimming, which is applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of not fully developing the high double carrier transport characteristics of perovskite and not reflecting the advantages of ZnO, etc. Achieve the effects of low cost of experimental raw materials, environmental friendliness, and simple production process

Active Publication Date: 2017-04-19
HUBEI UNIV
View PDF3 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, this work only uses the perovskite layer as a light-absorbing material and ZnO as an electron transport layer, and does not fully develop the high double-carrier transport characteristics of perovskite, and does not reflect the advantages of ZnO's higher band gap in ultraviolet detection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and preparation method thereof
  • ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and preparation method thereof
  • ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Example 1: Preparation of unannealed detectors:

[0039] (1) Sonicate the FTO with deionized water, acetone, and alcohol for 15 minutes each, and then treat it with ultraviolet ozone for 30 minutes.

[0040] (2) The ZnO seed layer is spin-coated. Dissolve 1.5M zinc acetate solution in methanol solution and stir for 10 minutes, and spin-coat on FTO at a speed of 4000r / min for 20 seconds. Dry at 110°C for 10 minutes, and then transfer to a horse-boiling furnace for annealing for 2 hours.

[0041] (3) Preparation of ZnO nanorods: add 0.6g polyetherimide (PEI) to 150ml deionized water and stir, then add 50mmol / L zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and 30mmol / L hexamethylenetetramine (C 6 h 12 N 4 ), fully stirred for 30 minutes, put the sample into the solution and reacted for 2 hours under the environment of 90 degrees. Blow dry the sample thoroughly after removing it from the solution.

[0042] (4) The synthesis method of the perovskite layer adopts th...

Embodiment 2

[0047] Embodiment 2: the preparation of the detector of vacuum annealing:

[0048] (1) Sonicate the FTO with deionized water, acetone, and alcohol for 15 minutes each, and then treat it with ultraviolet ozone for 30 minutes.

[0049] (2) The ZnO seed layer is spin-coated. Dissolve 1.5M zinc acetate solution in methanol solution and stir for 10 minutes, and spin-coat on FTO at a speed of 4000r / min for 20 seconds. Dry at 110°C for 10 minutes, and then transfer to a horse-boiling furnace for annealing for 2 hours.

[0050] (3) Preparation of ZnO nanorods: add 0.6g polyetherimide (PEI) to 150ml deionized water and stir, then add 50mmol / L zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and 30mmol / L hexamethylenetetramine (C 6 h 12 N 4 ), fully stirred for 30 minutes, and the sample was placed in the solution and reacted for 2 hours at 90 degrees. Blow dry the sample thoroughly after removing it from the solution. The nanorods were annealed in a pulsed laser deposition (PLD)...

Embodiment 3

[0056] Embodiment 3: the preparation of the detector of air annealing:

[0057] (1) Sonicate the FTO with deionized water, acetone, and alcohol for 15 minutes each, and then treat it with ultraviolet ozone for 30 minutes.

[0058] (2) The ZnO seed layer is spin-coated. Dissolve 1.5M zinc acetate solution in methanol solution and stir for 10 minutes, and spin-coat on FTO at a speed of 4000r / min for 20 seconds. Dry at 110°C for 10 minutes, and then transfer to a horse-boiling furnace for annealing for 2 hours.

[0059] (3) Preparation of ZnO nanorods: add 0.6g polyetherimide (PEI) to 150ml deionized water and stir, then add 50mmol / L zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and 30mmol / L hexamethylenetetramine (C 6 h 12 N 4 ), fully stirred for 30 minutes, put the sample into the solution and reacted for 2 hours under the environment of 90 degrees. Blow dry the sample thoroughly after removing it from the solution. Transfer to a horse boiling furnace for annealing a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector and a preparation method thereof. The ZnO-perovskite structure based ultraviolet-visible tunable photoelectric detector is in the structure of FTO / ZnO nanorod / CH3NH3PbI3 / Spiro-OMe TAD / Au, wherein the FTO layer is an anode, the ZnO nanorod is an electron transport layer, the CH3NH3PbI3 is a perovskite light absorption layer, the Spiro-OMe TAD is a hole transport layer, and the Au is a metal electrode. The ultraviolet-visible tunable photoelectric detector shows 9.56% of the photoelectric conversion efficiency under an unannealed condition. Meanwhile, the ultraviolet-visible tunable photoelectric detector shows the highest photoelectric response degree which reaches up to 7.8A / W in value under the bias voltage of 0. The detection degree of the ultraviolet-visible tunable photoelectric detector reaches the highest after vacuum annealing and reaches the responsivity of 10<14>, and the photoelectric detection performance of the ultraviolet-visible tunable photoelectric detector is ultraviolet light; and the photoelectric detection performance of the ultraviolet-visible tunable photoelectric detector is visible light after air annealing. In addition, the ultraviolet-visible tunable photoelectric detector has certain self-driving capability, and is not required to be driven by external bias voltage, thereby being conducive to energy conservation. The ultraviolet-visible tunable photoelectric detector is simple in operating step and low in experiment cost, and the manufactured detector has high responsivity and high detection sensitivity.

Description

technical field [0001] The present invention relates to the technical field of semiconductor nanomaterials and photodetectors, in particular to combining ZnO nanorods and perovskite materials to form heterojunctions through different annealing atmospheres to produce high-performance UV-visible tunable photodetectors and its preparation method. Background technique [0002] Perovskite materials have just been used in dye-sensitized solar cells in 2009. In just a few years, the efficiency of perovskite solar cells has developed rapidly, and the efficiency has increased from 4% to more than 20%. [1-2] Perovskite materials have been proven to have many advantages, including high absorption coefficient, high carrier mobility, long diffusion length, and long carrier lifetime. At the same time, perovskite materials have also been proved to have a strong light absorption ability in the range of 300nm-800nm, therefore, it is widely used in photovoltaic devices, photodetectors [3-4]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K85/00H10K30/451H10K30/80H10K30/00H10K2102/00Y02E10/549
Inventor 王浩薛梦妮周海叶葱
Owner HUBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com