Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Full-back-contact high-efficiency crystalline silicon cell metal graphical making method

A technology of full back contact and crystalline silicon cells, applied in the field of solar cells, can solve the problems of unsuitability for mass production, self-alignment compensation doping, high precision requirements, etc., achieve FF and Voc improvement, reduce preparation costs, align Effects with low precision requirements

Inactive Publication Date: 2017-03-29
SHANGHAI SHENZHOU NEW ENERGY DEV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the preparation method, the auxiliary grid line is formed by patterning on the front side of the battery substrate, and the main grid electrode and the second electrode are formed by patterning on the back side of the battery substrate. The second electrode is self-aligned and compensated for the second conductivity type region that it contacts doping, but the patent requires relatively high precision and is not suitable for mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Full-back-contact high-efficiency crystalline silicon cell metal graphical making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A full-back contact high-efficiency crystalline silicon battery metal patterning method, for full-back contact crystalline silicon batteries, perform high-temperature boron diffusion on the back to form an emitter junction, back phosphorus diffusion to form a back surface field, front surface phosphorus diffusion front surface field, and front / back passivation The anti-reflection layer deposition process also includes the electrode pattern and metallization process, and the following steps are adopted:

[0022] (1) The surface passivation layer is patterned and opened in the emitter junction area and the back surface field area of ​​the full back contact cell, and the dry method is used to peel off the openings of the passivation layer to uniformly or unevenly distribute round holes, continuous or irregular Continuous rectangle, square or irregular pattern, but the first prerequisite is to meet the subsequent metallization requirements, and the peeling size of the passiv...

Embodiment 2

[0027] A full-back contact high-efficiency crystalline silicon battery metal patterning method, for full-back contact crystalline silicon batteries, perform high-temperature boron diffusion on the back to form an emitter junction, back phosphorus diffusion to form a back surface field, front surface phosphorus diffusion front surface field, and front / back passivation The anti-reflection layer deposition process also includes the electrode pattern and metallization process, and the following steps are adopted:

[0028] (1) In the emitter junction area and the back surface field area of ​​the full back contact battery, the surface passivation layer is patterned and opened, and the passivation layer is peeled off with uniform or uneven distribution of round holes, continuous or uneven Continuous rectangle, square or irregular pattern, but the first premise is to meet the subsequent metallization requirements, the peeling size of the passivation layer is 100μm,

[0029] (2) Use a ...

Embodiment 3

[0034] A full-back contact high-efficiency crystalline silicon battery metal patterning method, for full-back contact crystalline silicon batteries, perform high-temperature boron diffusion on the back to form an emitter junction, back phosphorus diffusion to form a back surface field, front surface phosphorus diffusion front surface field, and front / back passivation The anti-reflection layer deposition process also includes the electrode pattern and metallization process, and the following steps are adopted:

[0035] (1) In the emitter junction area and the back surface field area of ​​the full back contact cell, the surface passivation layer is patterned and opened, and laser treatment is used, and the openings of the passivation layer are peeled off uniformly or unevenly distributed circular holes, continuous or discontinuous Rectangular, square or irregular patterns, but the first premise is to meet the subsequent metallization requirements, the peeling size of the passivat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a full-back-contact high-efficiency crystalline silicon cell metal graphical making method. First, back high-temperature boron diffusion is carried out on a full-back-contact crystalline silicon cell to form an emitter junction, back phosphorus diffusion is carried out to form a back surface field, front phosphorus diffusion is carried out to form a front surface field, and front / back passivation anti-reflection layer deposition treatment is carried out. Then, an electrode pattern and metallization process is carried out to complete full-back-contact high-efficiency crystalline silicon cell metal graphical making. Compared with the prior art, there is no need for expensive lithography equipment, PVD equipment, sputtering equipment or other large metal deposition equipment in the subsequent metallization process, the method is compatible with conventional production screen printing equipment, and the preparation cost of full-back-contact crystalline silicon cells is reduced significantly.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a metal patterning method for full-back contact high-efficiency crystalline silicon cells. Background technique [0002] In the prior art, most of the patents on back-contact high-efficiency crystalline silicon cells are related to Metal Wrap Through (MWT) cells, and some are related to thin-film back-contact technology, and most of them are only related to batteries. The simple description of the appearance, electrode structure and process, many of which are basically completed by processes with high technical costs, such as high-cost processes such as photolithography and high-precision mask alignment. [0003] Chinese patent CN102386254A discloses a metal wrap-through type back contact solar cell, a preparation method and an assembly thereof, belonging to the field of photovoltaic technology. The solar cell includes: a region of the first conductivity type and a region of the secon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0224
CPCH01L31/02245
Inventor 汪建强钱峥毅郑飞林佳继张忠卫石磊
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com