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Method for preparing thallium-based high-temperature superconducting thin film without roasting target

Active Publication Date: 2017-03-29
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the low efficiency in the prior art and the problem of poor crystallization of superconducting thin films due to unstable thallium content in the firing target, and provide a method for preparing thallium-based high-temperature superconducting thin films without firing targets

Method used

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  • Method for preparing thallium-based high-temperature superconducting thin film without roasting target
  • Method for preparing thallium-based high-temperature superconducting thin film without roasting target
  • Method for preparing thallium-based high-temperature superconducting thin film without roasting target

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Embodiment 1

[0022] Step 1, preparing a Tl-Ba-Ca-Cu-O amorphous precursor thin film by using DC magnetron sputtering.

[0023] figure 1 is a schematic diagram of the magnetron sputtering device. In the figure, two sputtering targets 1 are placed symmetrically. The film substrate substrate 2 is placed on a rotatable substrate support 3 (ie, a rotating stage).

[0024] The sputtering target 1 was produced by a two-step method. First use BaO 2 , CaO and CuO are mixed according to the atomic ratio Ba:Ca:Cu=2:1:2. After uniform mixing and grinding, they are burned in a flowing oxygen atmosphere at a temperature of 900°C for 10 hours, and then carefully ground after cooling. Burn again under the same conditions for 10 hours, grind to make BaCaCuO powder, and then mix BaCaCuO powder with Tl 2 o 3 The powders were mixed and grinded carefully, then pressed into tablets, sealed with a crucible, and fired in a flowing oxygen atmosphere at a temperature of 850°C for 1 hour. After cooling, caref...

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Abstract

The invention discloses a method for preparing a thallium-based high-temperature superconducting thin film without a roasting target. The method comprises the steps that a Tl-Ba-Ca-Cu-O amorphous precursor thin film is deposited on a substrate chip; in the flowing oxygen atmosphere, the amorphous precursor thin film is placed in a closed synthetic sapphire crucible to be subjected to high-temperature heat treatment, and the Tl-Ba-Ca-Cu-O amorphous precursor thin film is converted into the Tl2Ba2CaCu2O8(Tl-2212) high-temperature superconducting thin film. The sapphire crucible with the smooth surface is adopted, attaching is tighter, the closing performance is enhanced, and components needed for crystallization can be provided through the thallium element content in the amorphous precursor thin film. Accordingly, the thallium-source containing roasting target is not needed, uncertain factors are reduced, and the quality of the manufactured superconducting thin film is stable. The Tl-2212 superconducting thin film manufactured through the method can be used for manufacturing microwave passive devices and can also be used for manufacturing other superconducting devices, conducting the scientific study and the like.

Description

technical field [0001] The invention belongs to the technical field of superconducting electronic devices, and in particular relates to a method for making a thallium superconducting thin film. Especially when it comes to Tl 2 Ba 2 CaCu 2 o 8 (Tl-2212) Method for preparing thin films of high-temperature superconducting materials. Background technique [0002] High-quality high-temperature superconducting thin films are of great significance in the application of superconducting electronic devices, especially microwave passive devices. The existing Tl-2212 superconducting thin film is prepared in two steps. For example, in Patent of Invention Publication No. 1516297, a method for preparing a thallium-based superconducting thin film is disclosed. It prepares superconducting thin films through two steps: [0003] 1) Depositing a Tl-Ba-Ca-Cu-O amorphous precursor film on the substrate; [0004] 2) In argon, or oxygen, or argon-oxygen mixed gas atmosphere (~10 5 Pa), per...

Claims

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Application Information

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IPC IPC(8): C23C14/35H01B13/00H01B12/06
CPCC23C14/352H01B12/06H01B13/00Y02E40/60
Inventor 季鲁徐腾达赵新杰何明张旭
Owner NANKAI UNIV
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