Preparation method of polyimide film with low dielectric constant and low dielectric loss factor

Abstract

The invention discloses a preparation method of a polyimide film with a low dielectric constant and a low dielectric loss factor. Dianhydride and diamine are adopted for preparing a polyamide acid solution, and the polyamide acid solution and additives such as nanometer fluorine-containing macromolecule powder, nanometer aluminum oxide powder and nanometer silicon dioxide powder are prepared into the polyimide film. The preparation method is characterized in that the additives account for 10-50% of the weight of polyamide acid. The obtained polyimide film with the low dielectric constant and the lower dielectric loss factor can achieve the effects that the dielectric constant is smaller than or equal to 2.6, the dielectric loss factor is smaller than or equal to 0.003 on the basis of keeping good mechanical properties, the technology is simple, and raw materials are easy to purchase and low in price.

Description

technical field [0001] The invention relates to a preparation method of polyimide film, in particular to a preparation method of polyimide film with low dielectric constant and low dielectric loss factor. Background technique [0002] With the development of technology and product demand, the size of printed circuit boards tends to be light, thin, short, and small. In response to the high frequency of wireless networks and communication products, high-frequency substrates with fast transmission rates have gradually become the focus of development. As a material used in high-frequency communication substrates, it is the basic requirement to be able to transmit data quickly, and data loss or interference cannot be caused during the transmission process. It is known that the delay caused by the transmission of electronic signals between metal wires is the main reason for the speed limitation of semiconductor devices. In order to reduce the time delay of signal transmission, ma...

AI Technical Summary

Problems solved by technology

However, it is known that polyimide film has high dielectric constant and high dissipation factor, and it still has disadvantages and limitations as a high-frequency material.

At present, reducing the dielectric constant of PI materials mainly focuses on the following aspects: (1) Using fluorine-containing dianhydride and diamine monomers, but due to the complicated preparation process and high cost of fluorine-containing monomers, the prepared polyimide Amines are expensive; (2) Remove additives by heating or solvent extraction to obtain polyimide with a porous structure, and introduce voids into polyimide, such as using melamine as a pore-forming agent in patent CN201410481836.8, CN200610053038.0 The prepared honeycomb polyimide film, CN201410454474.3 introduces nanoscale apertures, but the strength of the porous polyimide structure decreases and the effective volume is large, which is not conducive to the application of polyimide in large-scale integrated circuit devices

Recently, CN201510136576.5, CN201510160254.4, CN201410733633.3, CN201520175411.4 and other patent publications of Damai Company adopt multilayer polyimide structure to prepare polyimide film with low dielectric constant, but The related multilayer film preparation process is complicated

On the other hand, the current related patents mainly focus on the reduction of dielectric constant, and less attention is paid to the reduction of dielectric loss factor. The dielectric loss factor of polyimide film is generally greater than 0.004