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Crystalline silicon solar cell and preparation method thereof

A technology for solar cells and crystalline silicon, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of weakening the passivation layer on the photoelectric performance of the battery, increasing the series resistance of the battery, and expensive equipment, and improving the photoelectric conversion efficiency. , the short-circuit current Isc increase, the effect of fast deposition

Active Publication Date: 2016-11-23
BYD CO LTD
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Problems solved by technology

[0004] The rear passivated crystalline silicon solar cell prepared by the current aluminum oxide passivation process needs to deposit two layers of films on the back, that is, the aluminum oxide passivation layer and the silicon nitride protective layer. The aluminum oxide layer needs to adopt the atomic layer deposition process. The equipment is expensive and the process is complicated. In addition, if the silicon nitride protective layer is deposited by ordinary low-frequency induced plasma chemical vapor deposition (LP-PECVD), the thickness of the silicon nitride layer must reach more than 150nm, otherwise aluminum conductive paste is printed on it. When the material is sintered, the glass frit in the aluminum paste can melt and pass through the silicon nitride layer in the molten state, causing its damage to the aluminum oxide passivation layer, thus weakening the improvement of the photoelectric performance of the battery by the passivation layer, but , because the silicon nitride layer is non-conductive, the aluminum paste forms an aluminum back field through the groove formed by laser ablation, because the area of ​​the groove is small, and the silicon nitride layer has a large thickness, which leads to an increase in the series resistance of the battery and filling factor down

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  • Crystalline silicon solar cell and preparation method thereof
  • Crystalline silicon solar cell and preparation method thereof

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[0033] The present invention also provides a method for preparing the above-mentioned crystalline silicon solar cell, which specifically includes the following steps:

[0034] S1. Provide a silicon substrate with a diffusion layer on the light-facing surface, and deposit boron carbide or cubic boron nitride on the backlight surface of the silicon substrate to form a passivation layer;

[0035] S2. Prepare an aluminum back field on the passivation layer, and the aluminum back field penetrates the passivation layer and is in contact with the silicon substrate;

[0036] S3. Prepare the electrode grid lines on the backlight surface on the aluminum back field, and prepare the electrode grid lines on the light-facing surface in contact with the diffusion layer on the light-facing surface of the silicon substrate.

[0037] The method provided by the invention is prepared on the basis of a silicon substrate with a diffusion layer on the light-facing surface. Wherein, the silicon subs...

Embodiment 1

[0062] This embodiment is used to illustrate the crystalline silicon solar cell and its preparation method disclosed in the present invention.

[0063] 1. Preparation of silicon wafers before plating passivation layer

[0064] The specification of the polycrystalline silicon wafer used is: 156mm×156mm, and the thickness is 200μm. After the silicon wafer is textured, diffused and etched, the back of the silicon wafer is polished to obtain a silicon substrate with a diffusion layer on the surface.

[0065] 2. Preparation of silicon nitride anti-reflection coating on the smooth surface

[0066] Silicon nitride anti-reflection coating is coated by ordinary low-frequency induced plasma chemical vapor deposition (LP-PECVD). The nitrogen source is ammonia gas, the silicon source is silane, the working frequency is 380kHz, and the working temperature of the silicon substrate is 440°C. The flow ratio of silane is 12:1, the radio frequency power is 2900W, and the deposition time is 9.5...

Embodiment 2

[0076] This embodiment is used to illustrate the crystalline silicon solar cell and its preparation method disclosed in the present invention.

[0077] Change the deposition time of the boron carbide passivation layer in step 3 in embodiment 1 to 25min, so that the thickness of the passivation layer becomes 190-200nm, and the rest are the same as in embodiment 1.

[0078] The obtained crystalline silicon solar cell is denoted as S2.

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Abstract

For improving the photoelectric conversion efficiency of crystalline silicon solar cells, the invention provides a crystalline silicon solar cell. The crystalline silicon solar cell comprises a silicon substrate. A passivation layer, an aluminum back field and a backlight surface electrode grid line are sequentially arranged on the backlight surface of the silicon substrate. The passivation layer is made of boron carbide or cubic boron nitride. The invention also discloses a preparation method of the crystalline silicon solar cell. The photoelectric conversion efficiency of the crystalline silicon solar cell is high.

Description

technical field [0001] The invention relates to a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] With the development of the solar industry and the intensification of competition, customers have higher and higher requirements for the efficiency of solar cells, and the entry threshold of the industry is also increasing. Therefore, it is necessary to explore more industrialization technologies to improve the conversion efficiency of solar cells. At present, the technology of solar cells to the light side is very mature, and the focus of improving the conversion efficiency is gradually shifting to the back side with great potential. The rear passivation battery with aluminum oxide passivation layer deposited on the back side by means of atomic layer deposition (ALD) technology has become a bright spot at present. Passivated emitter and rear surface passivated cell (PERC) is mainly based on the good passivation effect of aluminum ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 谭伟华黎飞云左静
Owner BYD CO LTD
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