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Preparation process test method of n-type solar cell selective back field

A technology of a solar cell and a testing method, applied in the field of solar cells, can solve the problems of inability to use in production, selective back-field testing, unstable selective back-field performance, etc.

Active Publication Date: 2016-03-16
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the existing process of preparing the selective back field, the advantages and disadvantages of the structure of the selective back field are not tested, resulting in the unstable performance of the final selective back field structure, which cannot be produced in large quantities. put into production

Method used

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  • Preparation process test method of n-type solar cell selective back field
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  • Preparation process test method of n-type solar cell selective back field

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Embodiment Construction

[0023] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in many different ways defined and covered by the claims.

[0024] Explanation of terms:

[0025] Selective back field: The selective back field structure is one of the methods to achieve high efficiency in the production process of PN crystalline silicon solar cells. The selective back field structure has two characteristics: (1) a highly doped deep diffusion region is formed under and near the electrode gate line; (2) a low doped shallow diffusion region is formed in other regions.

[0026] Sheet resistance: Sheet resistance, also known as film resistance, is a measurement value used to indirectly characterize the thermal infrared performance of vacuum coatings on samples such as thin film layers and glass coating layers. The size of the sheet resistance has nothing to do with the sample size. Its unit is...

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Abstract

The invention provides a testing method of a preparation technology of an N-type solar cell selective back surface field. The testing method comprises the steps of S1, testing a first square resistor for preparing a substrate of the selective back surface field; S2, performing a corrosion sizing agent printing, drying and cleaning technology on the back side of the substrate to obtain the selective back surface field and testing a second square resistor of the selective back surface field; S3, judging whether a resistance value of the second square resistor reaches to a target value or not, if the target value is not reached, a novel substrate is replaced, the step S1is repeated, and after the step S1 is performed, the weight of the corrosion sizing agent and / or the drying temperature are / is adjusted, and the step S2 is performed, and if the target value is reached, the technology in the step S2 is confirmed to be the preparation technology of the N-type solar cell selective back surface field. The N-type solar cell selective back surface field preparation technology confirmed by the testing method can be applied to large-scale production and usage.

Description

technical field [0001] The invention relates to the field of solar cells, and more specifically, to a preparation process and testing method for selective back field of N-type solar cells. Background technique [0002] The selective back field structure forms regions with different doping concentrations on the back surface of the solar cell. A low-doped region is formed in the active region. Low doping can reduce the bulk recombination probability of minority carriers, and can perform better surface passivation to reduce the surface recombination probability of minority carriers, thereby reducing the reverse of the battery. Saturation current increases the open circuit voltage Voc and short circuit current Isc of the battery. A highly doped region is formed under and near the electrode grid line, which is easy to form an ohmic contact when used as an electrode, and the volume resistance of this region is small, thereby reducing the series resistance of the solar cell and in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/66
CPCY02P70/50
Inventor 郎芳王英超赵文超李高非胡志岩熊景峰
Owner YINGLI GRP
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