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A kind of back polished crystalline silicon solar cell and its preparation process

A technology for solar cells and backside polishing, applied in the field of solar cells, can solve problems such as poor metal contact, achieve the effects of low manufacturing cost, increase current density Jsc and open circuit voltage Voc, and improve conversion efficiency

Active Publication Date: 2017-02-15
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existence of the suede also has a negative impact, and the phenomenon of poor contact with the metal

Method used

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  • A kind of back polished crystalline silicon solar cell and its preparation process
  • A kind of back polished crystalline silicon solar cell and its preparation process
  • A kind of back polished crystalline silicon solar cell and its preparation process

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preparation example Construction

[0056] Correspondingly, the present invention also provides a method for preparing a back-polished crystalline silicon solar cell as claimed in claim 1, such as image 3 shown, including the following steps:

[0057] S100 texturing adopts wet or dry etching technology to form a textured surface on the surface of the P-type silicon wafer, and the reflectivity is controlled at 1%-30%.

[0058] S101 Diffusion, forming an N-type emitter above the P-type silicon slice through diffusion, and forming a PN junction between the P-type silicon slice and the N-type emitter.

[0059] Preferably, the sheet resistance needs to be controlled to be 75-100 ohm / □ during diffusion.

[0060] More preferably, the sheet resistance needs to be controlled to be 85-90 ohm / □ during diffusion.

[0061] S102 back polishing, using HF solution to remove the phosphosilicate glass layer formed in the front of the N-type emitter and the back of the P-type silicon wafer during the diffusion process, and then...

Embodiment 1

[0085] (1) For texturing, use wet or dry etching technology to form a textured surface on the surface of the P-type silicon wafer, and the reflectivity is controlled at 10%;

[0086] (2) Diffusion, through POCl 3 Diffusion forms a PN junction, and the N-type emitter is obtained after controlling the sheet resistance to 75 ohm / □;

[0087] (3) Back polishing, first use HF solution to remove the phosphosilicate glass layer of the P-type silicon wafer, and then polish the back of the P-type silicon wafer with a back polishing solution. The reaction temperature is 80 ° C, and the thickness reduction is 4 μm Then use HF solution to remove the phosphosilicate glass layer on the front of the N-type emitter, after cleaning, dry the surface with hot nitrogen, and finally form a back polishing layer on the back of the P-type silicon wafer.

[0088] (4) Passivation, forming a silicon oxide, silicon nitride or silicon oxide-silicon nitride composite film on the front of the N-type emitter...

Embodiment 2

[0092] (1) For texturing, wet or dry etching technology is used to form a textured surface on the surface of the P-type silicon wafer, and the reflectivity is controlled at 20%;

[0093] (2) Diffusion, through POCl 3 Diffusion forms a PN junction, and the N-type emitter is obtained after controlling the sheet resistance to 80 ohm / □;

[0094] (3) Back polishing, first use HF solution to remove the phosphosilicate glass layer of the P-type silicon wafer, and then polish the back of the P-type silicon wafer with a back polishing solution. The reaction temperature is 82 ° C, and the thickness reduction is 5 μm Then use HF solution to remove the phosphosilicate glass layer on the front of the N-type emitter, after cleaning, dry the surface with hot nitrogen, and finally form a back polishing layer on the back of the P-type silicon wafer.

[0095](4) Passivation, forming a silicon oxide, silicon nitride or silicon oxide-silicon nitride composite film on the front of the N-type emit...

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Abstract

The invention discloses a crystalline silicon solar cell subjected to back polishing. The crystalline silicon solar cell comprises a back electrode, a back aluminum electric field, a back polishing layer, a P type silicon wafer, an N type emitting electrode, a passivation film and a front electrode, wherein the back electrode, the back aluminum electric field, the back polishing layer, the P type silicon wafer, the N type emitting electrode, the passivation film and the front electrode are sequentially connected from down to up; the back polishing layer is a film generated by performing back polishing process on the back of the P type silicon wafer, the back of the back polishing layer is a pyramid microstructural array which is formed by a plurality of equivalently arranged pyramids, and the longitudinal sections of the pyramids are in an inverted triangle shape. The invention further discloses a preparation method of the crystalline silicon solar cell subjected to back polishing. By adopting the crystalline silicon solar cell subjected to back polishing provided by the invention, the reflection on transmission light can be enhanced, the passivation effect can be improved, the electric current density and open-circuit voltage can be promoted, and the battery switchover efficiency can be improved.

Description

technical field [0001] The present invention relates to the technical field of solar cells, in particular to a back-polished crystalline silicon solar cell, and accordingly, the present invention also relates to a preparation process for a back-polished crystalline silicon solar cell. Background technique [0002] A solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. When sunlight shines on a semiconductor P-N junction (P-N Junction), a new hole-electron pair (V-E pair) is formed. ), under the action of the P-N junction electric field, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. Because it is a solid semiconductor device that converts sunlight energy into electrical energy by using the photovoltaic effect of various potential barriers, it is also called a solar cell or...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/056
CPCY02E10/52
Inventor 秦崇德方结彬石强黄玉平何达能
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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