Testing method of preparation technology of N-type solar cell selective back surface field

Abstract

The invention provides a testing method of a preparation technology of an N-type solar cell selective back surface field. The testing method comprises the steps of S1, testing a first square resistor for preparing a substrate of the selective back surface field; S2, performing a corrosion sizing agent printing, drying and cleaning technology on the back side of the substrate to obtain the selective back surface field and testing a second square resistor of the selective back surface field; S3, judging whether a resistance value of the second square resistor reaches to a target value or not, if the target value is not reached, a novel substrate is replaced, the step S1is repeated, and after the step S1 is performed, the weight of the corrosion sizing agent and / or the drying temperature are / is adjusted, and the step S2 is performed, and if the target value is reached, the technology in the step S2 is confirmed to be the preparation technology of the N-type solar cell selective back surface field. The N-type solar cell selective back surface field preparation technology confirmed by the testing method can be applied to large-scale production and usage.

Description

technical field [0001] The invention relates to the field of solar cells, and more specifically, to a preparation process and testing method for selective back field of N-type solar cells. Background technique [0002] The selective back field structure forms regions with different doping concentrations on the back surface of the solar cell. A low-doped region is formed in the active region. Low doping can reduce the bulk recombination probability of minority carriers, and can perform better surface passivation to reduce the surface recombination probability of minority carriers, thereby reducing the reverse of the battery. Saturation current increases the open circuit voltage Voc and short circuit current Isc of the battery. A highly doped region is formed under and near the electrode grid line, which is easy to form an ohmic contact when used as an electrode, and the volume resistance of this region is small, thereby reducing the series resistance of the solar cell and in...

AI Technical Summary

Problems solved by technology

[0003] However, in the existing process of preparing the selective back field, the advantages and disadvantages of the structure of the selective back field are not tested, resulting in the unstable performance of the final selective back field structure, which cannot be produced in large quantities. put into production

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