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Molybdenum disulfide film and preparation method thereof

A molybdenum disulfide, thin film technology, applied in chemical instruments and methods, gaseous chemical plating, chemically reactive gases, etc., can solve problems such as uncontrollable electrical properties of devices, inability to meet electronic components, etc., to facilitate industrial production. , to meet the quality requirements, the effect of simple process

Inactive Publication Date: 2016-09-28
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the molybdenum disulfide film prepared by this method is applied to electronic components, the oxide buffer layer in the middle will have an uncontrollable impact on the electrical properties of the device, which cannot meet the requirements of electronic components

Method used

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  • Molybdenum disulfide film and preparation method thereof

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preparation example Construction

[0018] The preparation method of the molybdenum disulfide thin film provided by the invention uses sapphire as a substrate, and effectively combines the specific properties of the molybdenum disulfide thin film and sapphire. The main component of sapphire is Al 2 o 3 As a substrate, it has the following advantages: first, its production technology is mature, its quality is good and its price is low; second, sapphire has good thermal stability and can be used in high temperature growth process; third, sapphire has high mechanical strength and is easy to clean and treatment; Fourth, the lattice constant of sapphire is close to that of molybdenum disulfide, which can reduce dislocations caused by lattice mismatch.

[0019] The preparation method of molybdenum disulfide thin film provided by the invention, process is as follows:

[0020] Using sapphire as a substrate, using CVD method to generate MoS on the surface of the substrate 2 film;

[0021] The generated MoS 2 The pro...

Embodiment 1

[0031]1. Clean the sapphire substrate, the cleaning process is as follows:

[0032] 1. Ultrasonic cleaning with acetone and deionized water;

[0033] 2. Ethanol ultrasonic cleaning, deionized water cleaning;

[0034] 3. Sulfuric acid: nitric acid = 1:1, cook at 80°C for several minutes, rinse with deionized water;

[0035] 4. Hydrochloric acid: hydrogen peroxide: water = 3:1:1, shake gently for a few minutes, rinse with deionized water;

[0036] 5. Hydrofluoric acid: water = 1:20, shake gently for a few minutes, rinse with deionized water;

[0037] 6. Rinse several times in a beaker of deionized water and rinse with running water.

[0038] 2. Using sulfur powder and MoO 3 (99.9%, analytically pure) is the source of sulfur and molybdenum, high-purity argon is used as the carrier gas, and MoS is deposited on sapphire by CVD 2 film. The growth temperature is 750° C., the pressure is normal pressure, the mass of the sulfur source is 0.75 g, and the mass of the molybdenum sou...

Embodiment 2

[0042] 1. Clean the sapphire substrate, the cleaning process is as follows:

[0043] 1. Ultrasonic cleaning with acetone and deionized water;

[0044] 2. Ethanol ultrasonic cleaning, deionized water cleaning;

[0045] 3. Sulfuric acid: nitric acid = 1:1, cook at 80°C for several minutes, rinse with deionized water;

[0046] 4. Hydrochloric acid: hydrogen peroxide: water = 3:1:1, shake gently for a few minutes, rinse with deionized water;

[0047] 5. Hydrofluoric acid: water = 1:20, shake gently for a few minutes, rinse with deionized water;

[0048] 6. Rinse several times in a beaker of deionized water and rinse with running water.

[0049] 2. Using sulfur powder and MoO 3 (99.9%, analytically pure) is the source of sulfur and molybdenum, high-purity argon is used as the carrier gas, and MoS is deposited on sapphire by CVD 2 film. The growth temperature is 750° C., the pressure is normal pressure, the mass of the sulfur source is 0.8 g, and the mass of the molybdenum sou...

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Abstract

The invention is applicable to the technical field of inorganic nano film materials and provides a preparation method of a molybdenum disulfide film, comprising: using a substrate of sapphire, and growing an MoS2 film on a surface of the substrate by means of CVD (chemical vapor deposition); the process of growing the MoS2 film includes: using sulfur powder and MoO3 as materials and high-purity argon as a carrier gas, depositing the MoS2 film on the substrate. The invention further provides the molybdenum disulfide film prepared by the method. According to the molybdenum disulfide film and the preparation method thereof provided by the invention, the molybdenum sulfide material used is highly bondable with the substrate material sapphire, the quality of the obtained MoS2 film is very high, and the requirements of the electronics field and optical field for the quality of nano film materials can be met.

Description

technical field [0001] The invention belongs to the technical field of inorganic nano-membrane materials, and in particular relates to a molybdenum disulfide thin film and a preparation method thereof. Background technique [0002] MoS 2 (Molybdenum disulfide) thin films are similar to graphene in structure and performance, but unlike graphene, molybdenum disulfide thin films have a tunable band gap. bulk crystalline MoS 2 (Molybdenum disulfide) has a band gap of 1.2eV, and its electronic transition mode is indirect transition; when the thickness is a single layer, MoS 2 The band gap can reach 1.8eV, and its electronic transition mode is changed to direct transition. Therefore, MoS 2 The unique structure, excellent physical properties and adjustable energy bandgap of the thin film make it have more application potential than graphene in the field of electronic devices. It will be a two-dimensional material with very important application prospects in the fields of electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00C23C16/30
CPCC30B29/46C23C16/305C30B25/00
Inventor 刘新科何佳铸李奎龙陈乐何祝兵俞文杰吕有明韩舜曹培江柳文军曾玉祥贾芳朱德亮洪家伟
Owner SHENZHEN UNIV
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