Method for realizing enhanced HEMT (High Electron Mobility Transistor) by virtue of p-type passivation and enhanced HEMT

Abstract

The invention discloses a method for realizing an enhanced HEMT (High Electron Mobility Transistor) by virtue of p-type passivation. The method comprises the following steps: providing a heterostructure which mainly comprises a first semiconductor and a second semiconductor, wherein the second semiconductor is distributed on the first semiconductor and is provided with a band gap wider than the first semiconductor, and two-dimensional electron gas is formed in the heterostructure; forming a p-type doped third semiconductor on the second semiconductor, performing passivation treatment on a residual region, except for an under-gate region, of the third semiconductor, so that the p-type doped region only exists at the under-gate region, and the under-gate region is distributed under a gate electrode of an HEMT device; manufacturing a source electrode, a drain electrode and a gate electrode connected with the heterostructure, electrically connecting the source electrode and the drain electrode through the two-dimensional electron gas, and enabling the gate electrode to be distributed between the source electrode and the drain electrode. The invention further discloses the enhanced HEMT. The method has the advantages of simple process, high repeatability, stable and favorable device performance, low cost, easiness for large-scale production and the like.

Description

technical field [0001] The invention relates to an enhanced HEMT (high electron mobility transistor) device and a preparation method thereof, in particular to a method for realizing an enhanced HEMT through p-type passivation and the enhanced HEMT formed thereby, belonging to the field of microelectronic technology. Background technique [0002] HEMT devices are made by making full use of the two-dimensional electron gas formed by the semiconductor heterostructure (Heterostructure) structure. Compared with III-VI (such as AlGaAs / GaAs HEMT), III-nitride semiconductors are due to piezoelectric polarization And the spontaneous polarization effect, a high-concentration two-dimensional electron gas can be formed in the heterostructure (such as AlGaN / GaN). Therefore, in HEMT devices made of group III nitrides, the barrier layer generally does not need to be doped. At the same time, group III nitrides have the characteristics of large band gap, high saturated electron drift veloci...

AI Technical Summary

Problems solved by technology

The concave gate structure solves the problem of small saturation current, but the barrier layer in the general HEMT device is only 20-30nm, and the process of forming the concave gate structure by etching process is difficult to control and the repeatability is poor

For another example, F plasma treatment can also realize enhanced HEMT devices, and does not require etching, but F plasma will also etch the barrier layer during the implantation process, resulting in a decrease in device performance

The p-type cap layer also requires an etching process, which is difficult to control and has poor repeatability. At the same time, an interface state is generated, which affects the stability of the device.

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