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A kind of p-type crystalline silicon solar cell with transparent electrode and preparation method thereof

A technology for solar cells and transparent electrodes, applied in the field of solar cells, can solve the problems of rare application, poor matching, and high contact resistance, and achieve the effects of avoiding power loss, balancing the dilemma and reducing production costs.

Active Publication Date: 2018-02-23
LONGI SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the application of transparent conductive films in thin film and heterojunction solar cells is very mature, it is rarely used in mainstream crystalline silicon solar cells in the market. high resistance

Method used

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  • A kind of p-type crystalline silicon solar cell with transparent electrode and preparation method thereof
  • A kind of p-type crystalline silicon solar cell with transparent electrode and preparation method thereof
  • A kind of p-type crystalline silicon solar cell with transparent electrode and preparation method thereof

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preparation example Construction

[0039] The method for preparing a P-type crystalline silicon backside partial contact solar cell with a transparent electrode is as follows:

[0040] (1) Surface texture treatment of P-type crystalline silicon wafers. The silicon wafers can be P-type single crystal silicon wafers and polycrystalline silicon wafers. The texture treatment can be chemical liquid corrosion, plasma etching, metal catalysis, and laser etching. and other methods.

[0041] (2) Use the phosphorus source as an impurity to form a uniform impurity layer of 40-100Ω / □, and the phosphorus source can be POCl 3 、PH 3 , phosphorus slurry, etc. The method of making the impurity layer can be atmospheric pressure diffusion, low pressure diffusion, ion implantation, phosphorus-containing slurry coating, etc.

[0042] (3) Etching removes the dead layer and the back junction, and the etching method can be wet etching or dry etching.

[0043] (4) Deposit or grow a passivation film of 5-50nm and an anti-reflection f...

Embodiment 1

[0058] (1) Anisotropic etching of P-type monocrystalline silicon wafers in a KOH solution at around 80°C to obtain a surface pyramid structure;

[0059] (2) with POCl 3 As an impurity, diffuse at about 800°C to form a uniform diffusion layer of 80Ω / □;

[0060] (3) Remove the phosphosilicate glass and the back junction by wet etching;

[0061] (4) Deposit silicon oxide of about 5nm and silicon nitride of about 80nm on the front;

[0062] (5) Aluminum oxide of about 30nm and silicon nitride of about 80nm are deposited successively on the back;

[0063] (6) Print phosphorous-containing dopants and boron-containing dopants on the front and back according to specific patterns, the printed pattern adopts a dot array, the diameter of a single dot is 50um, and the distance between dots is 0.8mm;

[0064] (7) Use laser to pulse heat the dopant according to the specific pattern described in step (6), so that the phosphorus atoms on the front side and the boron atoms on the back side ...

Embodiment 2

[0067] (1) Forming an inverted pyramid structure on the surface of a P-type single crystal silicon wafer by catalytic chemical etching of nanometer metal particles;

[0068] (2) by pH 3 As impurities, a uniform diffusion layer of 90Ω / □ is formed by ion implantation;

[0069] (3) The dead layer and back junction are removed by wet etching;

[0070] (4) Deposit about 80nm silicon oxynitride on the front side

[0071] (5) Deposit aluminum oxide of about 30nm on the back;

[0072] (6) adopt laser to carry out hole to aluminum oxide film on the back, adopt the method for vapor deposition to prepare back electrode again, and carry out annealing treatment;

[0073](7) Spray phosphorus-containing dopants on the front according to a specific pattern, the spray pattern adopts a dot array, the diameter of a single point is 100um, and the distance between points is 1.5mm;

[0074] (8) Use a laser to pulse heat the dopant according to the specific pattern described in step (7), so that...

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Abstract

The invention discloses a P-type crystalline silicon solar cell with a transparent electrode and a manufacturing method thereof. The solar cell comprises front metal electrodes, a front transparent conductive film, a front antireflection film / passivation film, an N-type layer, a P-type silicon substrate and a cell back electrode, wherein a locally heavily-doped N+ area is formed on the surface of the N-type layer according to a regular pattern to form a front electrode; the front transparent conductive film is directly contacted with the locally heavily-doped N+ area; and the front transparent conductive film enables the locally heavily-doped N+ area to be connected with the front metal electrodes to form the front electrode. The cell adopts the transparent conductive film locally contacted with the silicon substrate as the front or back transparent electrode of the solar cell, and good ohmic contact between the transparent conductive film and the silicon substrate can be formed.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a P-type crystalline silicon solar cell with a transparent electrode and a preparation method thereof. Background technique [0002] Since the first solar cell was born in Bell Laboratories in 1954, crystalline silicon solar cells have been widely used, the conversion efficiency has been continuously improved, and the production cost has continued to decline. At present, crystalline silicon solar cells account for more than 80% of the total global solar cell market, and the conversion efficiency of crystalline silicon cell production lines has exceeded 20%. The cost of electricity continues to shrink and is expected to be flat in the next few years. As a clean energy source, crystalline silicon solar cells play an increasingly important role in changing the energy structure and alleviating environmental pressure. [0003] If crystalline silicon solar cells want to continue ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0248H01L31/0224H01L31/18
CPCH01L31/022425H01L31/022466H01L31/0248H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 钟宝申李华赵科雄
Owner LONGI SOLAR TECH CO LTD
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