Method of adopting two-dimensional graphene thin film to improve conductivity of substrate during electron beam nano gate writing

A graphene film and electron beam technology, applied in the field of microelectronics, can solve the problems of poor electrical conductivity and charge accumulation on the surface of the substrate, and achieve the effect of solving the phenomenon of slippage, good adhesion, and easy removal

Active Publication Date: 2016-05-04
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Purpose of the invention: The present invention provides a method for improving the conductivity of the substrate in electron beam nanogrid writing by using a two-dimensional graphene film. The purpose is to solve the problem of electron beam writing without affecting the exposure and development of the resist. The problem of charge accumulation caused by the poor conductivity of the substrate surface during the process

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  • Method of adopting two-dimensional graphene thin film to improve conductivity of substrate during electron beam nano gate writing

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preparation example Construction

[0037] 8) preparing and stripping the gate metal;

[0038] 9) Removal of remaining graphene with oxygen plasma.

[0039] Wherein, the substrate prepared by the CVD method in step 1) of graphene is any one or more combinations of Cu, Ni, Ti, Ag, Al, Cr, Pd, Au, Mo, W, Fe. The material of the substrate can be selected according to needs, and is not strictly limited.

[0040] Preferably, the corrosion solution described in step (2) is any one of ferric chloride, ammonium persulfate, hydrogen chloride, sulfuric acid, nitric acid, hydrofluoric acid, aqua regia or a mixture thereof.

[0041] The target substrate described in step 4) includes Si, GaN, SiC, Al 2 o 3 , GaAs, SiO 2 , AlN, HfO 2 , Y 2 o 3 Any one or more of epitaxy and bonding assembly. The material of the target substrate can be selected according to needs, and is not strictly limited.

[0042] In step 5), the organic solution includes any one or a combination of acetone, NMP, and ethanol.

[0043] In step 6),...

Embodiment 1

[0048] A method for improving the conductivity of a substrate in electron beam nanogrid writing by using a two-dimensional graphene film, the specific process steps are as follows:

[0049] 1) Graphene is prepared on the metal Cu substrate by CVD method, and the PMMA transfer carrier is spin-coated on the graphene, and the thickness of the carrier is 100-300nm;

[0050] 2) The sample is placed in the corrosion solution with the PMMA transfer carrier facing up and the metal Cu facing down, the metal Cu below is dissolved, and the graphene is attached to the upper layer of PMMA;

[0051] 3) The sample is transferred to deionized water to wash away the residual ions carried out in the corrosion solution;

[0052] 4) Transfer the sample to the target substrate, such as common substrates such as gallium nitride, gallium arsenide, silicon carbide, and AlN;

[0053] 5) Soak in acetone to remove PMMA on the surface of the substrate, then soak in NMP (N-methylpyrrolidone) for 15 minut...

Embodiment 2

[0061] A method for improving the conductivity of a substrate in electron beam nanogrid writing by using a two-dimensional graphene film, the specific process steps are as follows:

[0062] 1) Graphene is prepared on the metal Cu substrate by CVD method, and the PMMA transfer carrier is spin-coated on the graphene, and the thickness of the carrier is 100-300nm;

[0063] 2) The sample is placed in the corrosion solution with the PMMA transfer carrier facing up and the metal Cu facing down, the metal Cu below is dissolved, and the graphene is attached to the upper layer of PMMA;

[0064] 3) The sample is transferred to deionized water to wash away the residual ions carried out in the corrosion solution;

[0065] 4) transferring the sample to a gallium arsenide substrate;

[0066] 5) Soak in acetone to remove PMMA on the surface of the substrate, then soak in NMP for 15 minutes, then pass through acetone and ethanol in turn, and finally wash with deionized water;

[0067] 6) Sp...

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Abstract

The invention discloses a method of adopting a two-dimensional graphene thin film to improve the conductivity of a substrate during electron beam nano gate writing. The method comprises the following steps: a CVD method is used for preparing graphene on a Cu substrate; spin coating of PMMA or MMA transfer vectors is carried out; a wet method is used for removing the Cu substrate and a sample is transferred to a substrate; the PMMA or the MMA is removed; spin coating of an electron beam resist is carried out; electron beam exposure and development are carried out; the graphene in an electron beam exposure area is removed; preparation and exfoliation of the gate metal are carried out; and oxygen plasmas are used for removing the graphene. The high conductivity of the two-dimensional graphene thin film is used for improving the conductivity of the surface of the substrate, the problems that an identifier can not be recognized and overlay has large errors caused due to poor conductivity of the substrate during the electron beam nano gate writing process can be solved, and the electron beam overlay accuracy is improved; and as the graphene thin film is below the electron beam resist, the graphene thin film has the advantages of being super thin and being well attached to the resist, the exposure and the development of the electron beam resist are not influenced, and removal of the graphene later is simple.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for improving the conductivity of a substrate in electron beam nano-grid writing by using a two-dimensional graphene film. Background technique [0002] After more than 20 years of rapid development, compound semiconductors with gate length as the minimum characteristic size have entered the era of nano-devices, which puts forward higher requirements for gate lithography technology. At present, lithography machines below 200nm are expensive and costly to maintain, while compound semiconductors are mainly used for research and development and small batch production, and the replacement speed is much faster than that of silicon. Therefore, the cost-effective electron beam exposure technology has become the most cost-effective. good choice. [0003] Different from photolithography technology, if the high-energy electron beam hits the surface of the sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28
CPCH01L21/28079
Inventor 郁鑫鑫吴云周建军
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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