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Suspended collector pnp integrated circuit transistor and method of making the same

A technology of integrated circuits and manufacturing methods, which is applied in the manufacture of transistors, circuits, semiconductors/solid-state devices, etc., can solve problems such as large collector series resistance and saturation voltage drop, affecting large current output capabilities, and low P buried concentration, etc., to achieve Improve the current output capability, reduce the saturation voltage drop, and the effect of high P buried concentration

Active Publication Date: 2018-12-04
CRM ICBG (WUXI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is simple to implement and does not need to add additional photolithography layers; but the biggest disadvantage is that the P buried concentration is light and the thickness is thin, which leads to large collector series resistance and saturation voltage drop of the FPNP tube, which greatly affects the high current output. ability

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  • Suspended collector pnp integrated circuit transistor and method of making the same
  • Suspended collector pnp integrated circuit transistor and method of making the same
  • Suspended collector pnp integrated circuit transistor and method of making the same

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Embodiment Construction

[0039] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0040] image 3 The vertical structure of the NPN transistor in the double epitaxial bipolar integrated circuit is shown. Please refer to image 3 , NPN tube 210 includes P-type upper isolation 211, P-type lower isolation 212, collector 213, collector deep phosphorus 214, base 215, P-type substrate 200, first epitaxial layer 219, second epitaxial layer 216, N Type buried layer 217, emitter 218.

[0041] Figure 4 Shows the longitudinal structure of FPNP transistors in double epitaxial bipolar integrated circuits. Please refer to Figure 4 , FPNP tube 220 includes P-type upper isolation 221, P-type lower isolation 222, collector 223, collector upper isolation 224, base 225, P-type substrate 200, first epitaxial layer 231, seco...

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Abstract

The invention relates to a suspension collector PNP integrated circuit transistor and a manufacturing method thereof. An N-type first epitaxial layer and an N-type second epitaxial layer are sequentially formed on a P-type substrate; an N-type buried layer is arranged in the P-type substrate, a collector P-type buried layer is arranged in the first epitaxial layer which is positioned on the N-type buried layer, and a collector upper isolation unit is arranged in the second epitaxial layer which is positioned on the collector P-type buried layer; a P-type lower isolation unit is arranged in the first epitaxial layer which is positioned on the upper portion of the periphery of the N-type buried layer, and a P-type upper isolation unit is arranged in the second epitaxial layer which is positioned on the P-type lower isolation unit; a first P+ diffusion region is arranged in the P-type upper isolation unit, and serves as a collector; an N+ diffusion region is arranged in the second epitaxial layer enclosed by the collector upper isolation unit and the collector P-type buried layer, and serves as a base; and a second P+ diffusion region is arranged in the second epitaxial layer enclosed by the N+ diffusion region, and serves as an emitter. The suspension collector PNP integrated circuit transistor and the manufacturing method thereof can reduce collector series resistance and saturation voltage drop, and increase current output capacity.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a floating collector PNP integrated circuit transistor and a manufacturing method thereof. Background technique [0002] In conventional bipolar integrated circuit design, PNP tubes are generally divided into two categories: horizontal PNP tubes (ie LPNP tubes) and vertical PNP tubes (ie VPNP tubes), and vertical PNP tubes can be divided into two types: substrate set Electrode PNP tube (ie SPNP tube) and floating collector PNP tube (ie FPNP tube). These three PNP tubes have their own characteristics: [0003] LPNP tubes are widely used, and its production can be carried out at the same time as ordinary NPN tubes without any additional process; but there are disadvantages such as low current gain, poor high-current characteristics, and poor frequency characteristics; [0004] The large current characteristics and frequency characteristics of the SPNP tube are better than those of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L27/088H01L21/331
Inventor 唐敏杰程学农韦林军季晓红
Owner CRM ICBG (WUXI) CO LTD
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